• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.400-400
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• 2009

Despite the success of Cu(In,Ga)$Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. One candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Co-evaporation technique will be one of the best methods to control film composition. This type of absorber derives from the $CuInSe^2$ chalcopyrite structure by substituting half of the indium atoms with zinc and other half with tin. Energy bandgap of this material has been reported to range from 0.8eV for selenide to 1.5eV for the sulfide and large coefficient in the order of $10^{14}cm^{-1}$, which means large possibility of commercial production of the most suitable absorber by using the CZTSe film. In this work, Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. We reported on some of the absorber properties and device results.

• Safety and Health at Work
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• 제3권4호
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• pp.257-267
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• 2012

Occupational neurotoxic diseases have become increasingly common in Taiwan due to industrialization. Over the past 40 years, Taiwan has transformed from an agricultural society to an industrial society. The most common neurotoxic diseases also changed from organophosphate poisoning to heavy metal intoxication, and then to organic solvent and semiconductor agent poisoning. The nervous system is particularly vulnerable to toxic agents because of its high metabolic rate. Neurological manifestations may be transient or permanent, and may range from cognitive dysfunction, cerebellar ataxia, Parkinsonism, sensorimotor neuropathy and autonomic dysfunction to neuromuscular junction disorders. This study attempts to provide a review of the major outbreaks of occupational neurotoxins from 1968 to 2012. A total of 16 occupational neurotoxins, including organophosphates, toxic gases, heavy metals, organic solvents, and other toxic chemicals, were reviewed. Peer-reviewed articles related to the electrophysiology, neuroimaging, treatment and long-term follow up of these neurotoxic diseases were also obtained. The heavy metals involved consisted of lead, manganese, organic tin, mercury, arsenic, and thallium. The organic solvents included n-hexane, toluene, mixed solvents and carbon disulfide. Toxic gases such as carbon monoxide, and hydrogen sulfide were also included, along with toxic chemicals including polychlorinated biphenyls, tetramethylammonium hydroxide, organophosphates, and dimethylamine borane. In addition we attempted to correlate these events to the timeline of industrial development in Taiwan. By researching this topic, the hope is that it may help other developing countries to improve industrial hygiene and promote occupational safety and health care during the process of industrialization.

• Current Photovoltaic Research
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• 제10권2호
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• pp.33-38
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• 2022

Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (J_SC). In this study, we have demonstrated a path to overcome deficiency in J_SC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (T_RTA), also it is observed that film structure changes from cube-like to plate-like structure with T_RTA. The maximum J_SC of 23.1 mA cm^-2 was observed for 400℃ with an open-circuit voltage (V_OC) of 0.140 V for the same temperature. The highest performance of 2.21% with J_SC of 18.6 mA cm^-2, V_OC of 0.290 V, and fill factor (FF) of 40.9% is observed for a T_RTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in J_SC is approximately 80% while a loss in V_OC of about 20% has been observed.

• 한국양식학회지
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• 제4권2호
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• pp.111-128
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• 1991

전북연안의 백합양식장 회복여부를 진단하기 위하여 부안군해역의 장신리와 대항리 백합 양식장을 대상으로 1987년 4월 부터 11월까지 어장환경조사를 실시한 결과는 다음과 같다. 두 양식장의 해수수온 변화는 $10.7{\~}27.4^{\circ}C$, pH는 $7.6{\~}8.2$, 염분은 강우기를 제외하고는 $22.3{\~}30.3^\%_{\circ}$ COD는 $0.20{\~}4.71\;mg/{\ell}$, 황화물은 $0.04{\~}0.22\;{\mu}g-at./{\ell}$, 부유성고형물질은 $34.8{\~}199.3mg/{\ell}$, 엽록소 a 함량은 $3.71{\~}49.02mg/m^3$, TIN은 $2.01{\~}24.47\;{\mg}g-at./{\ell}$, 인산은 $0.60{\~}11.03\;{\mu}g-at./{\ell}$, 규산은 $4.40{\~}476.36\;{\mu}g-at./{\ell}$범위로 변동하였다. 간석지의 수온은 $14.2{\~}29.7^{\circ}C$ 범위였고, pH는 $8.3{\~}9.5$, 함수량은 $0.28{\~}0.49\;mg/g$ 건이, COD는 $2.80{\~}50.94\;mg/g$ 건이, 유기물총량은 $1.05{\~}1.97\%$, 총질소함량은 $31.9{\~}194.9\;{mu}g/g$ 건이, 황화물양은 $0.032{\~}0.133$ 건이 범위를 나타내었다. 저질의 입도분석 결과는 입경 $0.35{\~}0.074$ mm의 가는 모래가 $92{\~}95\%$로서 대부분을 차지하였고 $2.8{\~}8.1\%$가 점토질로 구성되어 있었다. 두 양식장에서 산출된 백합을 대상으로 잔류농약성분을 분석한 바 ${\alpha},\;{\beta},\;{\gamma}$-BHC, heptachlor, heptachlor-epoxide, aldrin, DDE, DDT 및 dieldrin등이 검출되었으며, 특히 강우기에 많은 종류가 검출되었다.

• 자원환경지질
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• 제19권2호
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• pp.109-122
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• 1986

장군(將軍) 연(鉛) 아연(亞鉛) 망간 광상(鑛床)은 캠브로-오도뷔스기(紀)의 장군석회암(將軍石灰岩)과 춘양화강암(春陽花岡岩)과의 접촉부에 발달(發達)하는 접촉교대광상(接觸交代鑛床)이다. 광체(鑛體)는 맥상(脈狀) 및 광통형광체로 상부에는 산화(酸化)망간 및 탄산(炭酸)망간석을 주로 하는 망간광물이 우세하고 하부에는 섬아연석(閃亞鉛石)-방연석(方鉛石)-황철석(黃鐵石)-유비철석(탄산망간석)등의 황화광물(黃化鑛物)이 우세하게 발달하고 있다. 그중 망간광상의 성인에 대하여 열수교대(熱水交代)와 동시퇴적기원(同時堆積起源)으로 그 해석을 달리하고 있으며 탄산(炭酸)망간석(rhodochrosite)이 동시 퇴적기원이란 근거에서 장미암(rhodochrostone)으로 명명된 퇴적암(堆積岩)이 제안되었다(김, 1975). 본 연구에서는 탄산망간석의 기원을 규명하고 이들 광물(鑛物)의 침전환경을 추정하기 위하여 모암인 탄산염암류와 탄산망간석, 산화망간, 방해석 등의 탄소안정동위원소(炭素安定同位元素)(${\delta}^{13}C$)와 산소(酸素)동위원소(${\delta}^{18}O$)를 분석하고 이에 수반되는 황화광물(黃化廣)의 황동위원소(黃同位元素)(${\delta}^{34}S$)를 분석검토하였다. 모암인 석회암 및 돌로마이트질석회암은 ${\delta}^{13}C$=-2.6~+0.1‰ (평균 -1.5‰), ${\delta}^{18}O$=+10.9~+21.9‰ (평균 +17.5‰)이고 탄산망간석은 ${\delta}^{13}C$=-4.2~-6.3‰(평균 -5.3‰), ${\delta}^{18}O$=+7.6~+12.9‰(평균 +10.7‰)로 이들 사이에는 현저한 동위원소값의 차이를 나타내고 있다. 이는 광화용액(鑛化溶液)의 탄소(炭素) 및 산소(酸素)가 모암(母岩)인 탄산염암(炭山鹽岩)의 것과는 동일기원(同一起源)이 아님을 가르킨다. 황동위원소(黃同位元素)(${\delta}^{34}S$)의 값도 +2.0~+5‰로 좁은 범위를 나타내며 화성기원(火成起源)의 황(黃)으로 해석된다. 황동위원소지질온도계(黃同位元素地質溫度計)에 의해 추정된 광상생성온도(鑛床生成溫度)는 $288{\sim}343^{\circ}C$이다. 탄산(炭酸)망간석을 침전시킨 광화용액(鑛化溶液)의 ${\delta}^{18}O_{H_2O}$=+6.6~+10.6‰, ${\delta}^{13}C_{CO_2}$=-4.0~-5.1‰로 심부기원(深部起源)(화성기원(火成起源))으로 해석된다. 따라서 탄산(炭酸)망간석은 마그마성 열수기원에서 침전된것이다. 그러나 망간산화물은 모두 지하수면(地下水面) 상부에서 탄산망간석의 산화(酸化)에 의해 2차적(二次的)으로 형성된 표성산화(表成酸化)망간이며 산화망간광물의 산소는 순환수의 산소보다 석회암(石灰岩)의 산소와 동위원소교환(同位元素交換)이 우세하게 일어난 것으로 해석된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• 센서학회지
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• 제33권1호
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• pp.40-47
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• 2024

The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO₂) on p-type chromium oxide (Cr₂O₃) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO₂ is incorporated. In comparison to Cr₂O₃ films, the bare Cr₂O₃ nanorods exhibits a response 3.3 times greater to 50 ppm H₂S at 300℃, while the SnO₂-decorated Cr₂O₃ nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH₄, H₂S, CO₂, H₂), a notable selectivity toward H₂S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H₂S, thus advancing the prospects of gas sensor technology.