• 제목/요약/키워드: time-based prospective memory

검색결과 4건 처리시간 0.019초

기억유발자극이 아동의 시간의존적 미래계획 기억 발달에 미치는 영향 (Time-based Prospective Memory of Children : Effect of Reminder Type)

  • 서지연;최경숙
    • 아동학회지
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    • 제28권5호
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    • pp.161-174
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    • 2007
  • To analyze the effect of reminder type on the development of time-based prospective memory of children, 270(90 each 5-, 7-, and 9-year old) participants were randomly divided by age group into three subgroups : self-cued reminder, other-cued reminder, and control groups. Results showed that the performance of time-based prospective memory significantly increased with age, and the presentation of reminders was effective for improving the performance of time-based prospective memory. For younger children the presentation of other-cued reminder was more effective than self-cued reminder, but for the older children, presentation of self-cued reminder was more effective than other-cued reminder.

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노인의 미래기억을 보조하는 UI (UI, Supporting Old Age's Prospective Memory)

  • 윤용식;이승룡;이경수;윤종성;송선미;오창영;손영우
    • 한국HCI학회:학술대회논문집
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    • 한국HCI학회 2006년도 학술대회 2부
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    • pp.655-660
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    • 2006
  • 노인들은 연령에 따라 기억력의 저하가 일어나면서 일상생활을 영유하는데 많은 불편함을 겪고 있다. 정해진 시간에 약을 복용하는 것을 기억하거나 가스 불에 물을 끊인 후 끄는 것을 기억하는 것 등 의도한 행위를 실제로 수행하거나, 진행 중인 행위와 미래에 수행하여야 할 행위 등을 기억 (미래기억; prospective memory) 해야 하는 데 부담을 갖는다. 특히 노인은 시간-의존 미래기억(time-based PM)에서 다른 미래기억보다 연령에 따른 낮은 기억 수행을 보였다. (Einstein & McDaniel, 1995) 본 논문은 인터뷰와 설문을 통해 노인의 일상생활의 패턴을 파악하고, 일상생활과 비슷한 상황에서 노인의 시간-의존 미래기억(time-based prospective memory)과 노인의 자율성(autonomy)을 높이기 위한 몇 가지 UI 방식을 알아보고자 하였다. 실험 결과, 노인 실험 참가자는 사건의존 미래기억에서 의도와 연합된 '맥락 단서'를 제시하는 방식을 더 선호하였으며, 시간의존 미래기억 실험에서는 대학생 집단보다 미래기억 수행 시 외부 도구에 대한 강한 의존도를 보였다. 이는 적절한 미래기억 보조도구가 제시된다면 더 높은 수행을 보일 수 있음을 확인하였다.

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LSTM-based aerodynamic force modeling for unsteady flows around structures

  • Shijie Liu;Zhen Zhang;Xue Zhou;Qingkuan Liu
    • Wind and Structures
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    • 제38권2호
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    • pp.147-160
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    • 2024
  • The aerodynamic force is a significant component that influences the stability and safety of structures. It has unstable properties and depends on computer precision, making its long-term prediction challenging. Accurately estimating the aerodynamic traits of structures is critical for structural design and vibration control. This paper establishes an unsteady aerodynamic time series prediction model using Long Short-Term Memory (LSTM) network. The unsteady aerodynamic force under varied Reynolds number and angles of attack is predicted by the LSTM model. The input of the model is the aerodynamic coefficients of the 1 to n sample points and output is the aerodynamic coefficients of the n+1 sample point. The model is predicted by interpolation and extrapolation utilizing Unsteady Reynolds-average Navier-Stokes (URANS) simulation data of flow around a circular cylinder, square cylinder and airfoil. The results illustrate that the trajectories of the LSTM prediction results and URANS outcomes are largely consistent with time. The mean relative error between the forecast results and the original results is less than 6%. Therefore, our technique has a prospective application in unsteady aerodynamic force prediction of structures and can give technical assistance for engineering applications.

High density plasma etching of CoFeB and IrMn magnetic films with Ti hard mask

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.233-233
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

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