• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.31-32
• /
• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Current Applied Physics
• /
• 제18권12호
• /
• pp.1496-1506
• /
• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• 인간식물환경학회지
• /
• 제21권6호
• /
• pp.485-492
• /
• 2018

This study aimed to develop and validate highly sensitive determination method of a prostaglandin ($PGE_1$, OP 1206) in human plasma by LC-MS/MS using column switching. Plasma stored at $-30^{\circ}C$ and treated with methanol effectively inhibited interferences synthesized post-sampling. Samples were added with internal standard and were separated by reversed-phase HPLC with a cycle time of 30min. The method was selective for OP 1206 and the regression models, based on internal standard, were linear across the concentration range 0.5-50 pg/mL with the limit of quantification of 0.5 pg/mL (limit of quantitation, LOQ) for OP 1206. The calibration curve of OP 1206 standards spiked in five individual plasma samples was linear ($r^2=0.9999$). Accuracy and precision at the concentrations of 0.5, 1.5, 5.0 and 40 pg/mL, and at the lower LOQ of 0.5 pg/mL were excellent at 20%. OP120 < 6 was stable in plasma samples for at least 24 hours at room temperature, 24 hours frozen at $-70^{\circ}C$, 24 hours in an auto sampler at $6^{\circ}C$, and for two freeze/unfreezing cycles. The validated determination method successfully quantified the concentrations of OP 1206 in plasma samples from simulated administrating a single $5{\mu}g$ OP 1206 formulation. Thus, this novel LC-MS/MS technique for drug separation, detection and quantitation is expected to become the standard highly-sensitive detection method in bioanalysis and to be applied to many low dose pharmaceutical products.

• 전기전자학회논문지
• /
• 제22권4호
• /
• pp.1234-1237
• /
• 2018

본 논문에서는 planar MOSFET 대비 on 저항 감소 및 스위칭 속도 개선의 장점이 있는 4H-SiC trench MOSFET응용을 위하여 trench MOSFET 중요 이슈 중 하나인 sub-trench의 개선연구를 수행하였다. sub-trench의 제거를 위하여 Ar reshape 공정을 수행하였고, 온도와 공정시간을 변화해가며 trench 형태의 변화를 관찰하였다. 그 결과 $1500^{\circ}C$, 20분 조건에서 가장 적절한 sub-trench 완화를 확인하였다. 또한 Ar reshape 공정 이후 건식/습식 산화공정을 진행하여 결정방향에 따른 산화막 두께변화에 대해 확인하였다.

• 전기전자학회논문지
• /
• 제23권3호
• /
• pp.865-872
• /
• 2019

대기압에서의 Ar 직류 글로우방전 현상을 1차원 유체모델을 통하여 시뮬레이션을 수행하였다. Ar 기체방전의 여기입자들로부터 방출되는 광원으로서 4가지(${\lambda}_{128nm}$, ${\lambda}_{727nm}$, ${\lambda}_{912nm}$ 그리고 ${\lambda}_{966nm}$) 파장의 빛을 검토하였다. 그 결과, 사인형태의 전원 전압을 인가하였을 경우, ${\lambda}_{128nm}$와 ${\lambda}_{727nm}$의 광원이 직류 전압파형을 인가하였을 때보다 거의 2배에 가까운 빛을 방출하는 것을 확인하였다. 또한, 전원전압의 스위칭 시간이 짧을수록, ${\lambda}_{128nm}$와 ${\lambda}_{727nm}$의 방출이 더 많아지는 것을 알 수 있었다. 본 연구에서는 하전입자에 의한 줄 열과 소모 전력에 관해서도 논의하였다.

• 한국항공우주학회지
• /
• 제49권5호
• /
• pp.383-388
• /
• 2021

항공기에 사용되는 공기 흡입식 엔진은 고도가 높아질수록 성능의 한계를 가지며, 이는 실용상승한도(Service Ceiling)와 절대상승한도(Absolute Ceiling) 고도로 나타나게 된다. 고정익 항공기가 순항비행(Level Flight) 상태에서 고전제어기법(Classical Control)을 사용하여 고도 및 속도 유지를 하는 방법은 일반적으로 속도 증/감속을 위해 추력을 사용하고, 고도 증/감을 위해 피치 자세를 사용한다. 실용 상승 한도 고도 부근에서 이 방법을 사용하는 경우 고도 오차를 줄이기 위해 피치를 증가시키면 속도 감속으로 나타나게 된다. 따라서 피치 자세를 사용하여 속도를 먼저 유지하는 방법을 사용해야 한다. 특히 무인기의 경우 이 두 가지의 방법을 자동으로 적절한 시점에 사용할 수 있어야 한다. 본 논문에서는 고도 상승률이 둔화되는 실용상승한도 부근에서 속도와 고도유지 알고리즘의 전환 방법을 제안하고, 비행시험을 통해 개선된 효과를 확인하였다.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제16권6호
• /
• pp.1892-1912
• /
• 2022

With the massive demand and growth of cloud computing, virtualization plays an important role in providing services to end-users efficiently. However, with the increase in services over Cloud Computing, it is becoming more challenging to manage and run multiple Virtual Machines (VMs) in Cloud Computing because of excessive power consumption. It is thus important to overcome these challenges by adopting an efficient technique to manage and monitor the status of VMs in a cloud environment. Reduction of power/energy consumption can be done by managing VMs more effectively in the datacenters of the cloud environment by switching between the active and inactive states of a VM. As a result, energy consumption reduces carbon emissions, leading to green cloud computing. The proposed Efficient Dynamic VM Scheduling approach minimizes Service Level Agreement (SLA) violations and manages VM migration by lowering the energy consumption effectively along with the balanced load. In the proposed work, VM Scheduling for Efficient Dynamically Migrated VM (VMS-EDMVM) approach first detects the over-utilized host using the Modified Weighted Linear Regression (MWLR) algorithm and along with the dynamic utilization model for an underutilized host. Maximum Power Reduction and Reduced Time (MPRRT) approach has been developed for the VM selection followed by a two-phase Best-Fit CPU, BW (BFCB) VM Scheduling mechanism which is simulated in CloudSim based on the adaptive utilization threshold base. The proposed work achieved a Power consumption of 108.45 kWh, and the total SLA violation was 0.1%. The VM migration count was reduced to 2,202 times, revealing better performance as compared to other methods mentioned in this paper.

• 한국전기전자재료학회논문지
• /
• 제36권2호
• /
• pp.143-150
• /
• 2023

Underwater wireless communication is a challenging issue for realizing the smart aqua-farm and various marine activities for exploring the ocean and environmental monitoring. In comparison to acoustic and radio frequency technologies, the visible light communication is the most promising method to transmit data with a higher speed in complex underwater environments. To send data at a speedier rate, high-performance photodetectors are essentially required to receive blue and/or cyan-blue light that are transmitted from the light sources in a light-fidelity (Li-Fi) system. Here, we fabricated high-performance organic phototransistors (OPTs) based on P-type donor polymer (PTO2) and N-type acceptor small molecule (IT-4F) blend semiconductors. Bulk-heterojunction (BHJ) PTO2:IT-4F photo-active layer has a broad absorption spectrum in the range of 450~550 nm wavelength. Solution-processed OPTs showed a high photo-responsivity >1,000 mA/W, a large photo-sensitivity >10³, a fast response time, and reproducible light-On/Off switching characteristics even under a weak incident light. BHJ organic semiconductors absorbed photons and generated excitons, and efficiently dissociated to electron and hole carriers at the donor-acceptor interface. Printed and flexible OPTs can be widely used as Li-Fi receivers and image sensors for underwater communication and underwater internet of things (UIoTs).

• 한국전기전자재료학회논문지
• /
• 제37권1호
• /
• pp.101-105
• /
• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• 한국전자통신학회논문지
• /
• 제18권6호
• /
• pp.1081-1086
• /
• 2023

현대 네트워크의 급속한 성장과 복잡성 증가는 전통적인 네트워크 아키텍처의 한계를 부각시켰다. 이러한 과제에 대응한 SDN(Software-Defined Network)의 등장은 기존의 네트워크 환경을 변화시켰다. SDN은 제어부와 데이터부를 분리하고 중앙 집중식 컨트롤러를 사용하여 네트워크 동작을 조정한다. 하지만 이러한 구조도 최근 수많은 IoT(Internet of Things) 기기의 급속한 확산으로 엄청난 양의 트래픽이 발생하게 되었고 이는 네트워크의 전송 속도를 느리게 할 뿐 아니라 QoS(Quality of Service)를 보장하기 어렵게 만들었다. 이에 본 논문에서는 어느 특정 IP에서 다량의 데이터가 유입되는 경우 즉, 서버 과부화 및 데이터 손실이 발생하게 되어 전체적인 네트워크 지연이 발생할 시 기존의 데이터처리 스케줄링 기법인 RR(Round-Robin) 방식에서 해당 IP와 임의의 서버(처리기)를 Mapping 하는 방식으로 전환하여 데이터를 부하분산하는 기법을 제안하고자 한다.