• 제목/요약/키워드: time annealing

검색결과 935건 처리시간 0.024초

Activation energy for the loss of substitutional carbon in $Si_{0.984}C_{0.016}$ grown by solid phase epitaxy

  • Kim, Yong-Jeong;Kim, Tae-Joon;Park, Byungwoo;Song, Jong-Han
    • Journal of Korean Vacuum Science & Technology
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    • 제4권2호
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    • pp.50-54
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    • 2000
  • We studied the synthesis of S $i_{1-x}$ Cx (x=0.016) epitaxial layer using ion implantation and solid phase epitaxy (SPE). The activation energy Ea was obtained for the loss of substitutional carbon using fourier transform-infrared spectroscopy (FTIR) and high-resolution x-ray diffraction (HR-XRD). In FTIR analysis, the integrated peak intensity was used to quantify the loss of carbon atoms from substitutional to interstitial sites during annealing. The substitutional carbon contents in S $i_{0.984}$ $C_{0.016}$ were also measured using HR-XRD. By dynamic simulations of x-ray rocking curves, the fraction of substitutional carbon was obtained. The effects of annealing temperature and time were also studied by comparing vacuum furnace annealing with rapid thermal annealing (RTA))))))

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GaN 소자의 쇼트키 특성 향상에 관한 연구 (Studies on Improvement of Schottky Characteristics for GaN Devices)

  • 윤진섭
    • 한국전기전자재료학회논문지
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    • 제14권9호
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    • pp.700-706
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    • 2001
  • In this paper, I have fabricated and measured the gallium nitride(GaN) based Schottky diodes, and have carried out analyses of degradation of Schottky barrier characteristics. To improve of degraded Schottky barrier characteristics, I have carried out several experiments such as N$_2$ plasma exposure, annealing in N$_2$ ambient and annealing after N$_2$ plasma exposure. In the results of these experiments, I have achieved that only annealing in N$_2$ ambient is enough to improve the Schottky barrier characteristics, are temperature of 700$\^{C}$ and time of 90 sec in N$_2$ ambient furnace. for the analysis of these experiments, I have carried out the measurement of electric characteristics and quantitative analysis of etching damage using AES(Aguger Electron Spectroscopy).

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혼합형 유전 알고리즘을 이용한 퍼지 안정화 제어기의 계수동조 기법에 관한 연구 (A Study on the Parameters Tuning Method of the Fuzzy Power System Stabilizer Using Genetic Algorithm and Simulated Annealing)

  • 이흥재;임찬호
    • 대한전기학회논문지:전력기술부문A
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    • 제49권12호
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    • pp.589-594
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    • 2000
  • The fuzzy controllers have been applied to the power system stabilizer due to its excellent properties on the nonlinear systems. But the design process of fuzzy controller requires empirical and heuristic knowledge of human experts as well as many trial-and-errors in general. This process is time consuming task. This paper presents an parameters tuning method of the fuzzy power system stabilizer using the genetic algorithm and simulated annealing(SA). The proposed method searches the local minimum point using the simulated annealing algorithm. The proposed method is applied to the one-machine infinite-bus of a power system. Through the comparative simulation with conventional stabilizer and fuzzy stabilizer tuned by genetic algorithm under various operating conditions and system parameters, the robustness of fuzzy stabilizer tuned by proposed method with respect to the nonlinear power system is verified.

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용융아연 도금욕에서 망간 산화물의 표면석출 거동 (Behavior of the Surface Precipitation of Manganese Oxides during Hot-dip Galvanizing)

  • 이호종;김명수
    • 한국표면공학회지
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    • 제48권1호
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    • pp.27-32
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    • 2015
  • Advanced high strength steels undergo recrystallization annealing in reducing gas atmosphere before galvanizing to improve mechanical properties. The selective oxidations of elements such as Mn, Si, Cr and Al during annealing decrease wettability of liquid zinc, resulting in bare spots and other defects. In this work, Fe-3wt%Mn steel sheet was annealed at $780^{\circ}C$ for 1200 sec. in 5% $H_2-N_2$ atmosphere and then dipped into zinc bath held at $460^{\circ}C$, which contained 0.2wt% dissolved Al. MnO crystallines in the average size of 200 nm were formed on the surface after annealing. It is estimated that MnO has been detached into bath with the formation and growth of inhibition layer with longer immersion time during galvanizing. No evidence of aluminothermic reduction of MnO has been found in this study.

Ramping up 조건에 따른 four-step RTP공정의 효과 (Effects of a four-step rapid thermal annealing process on the condition of ramping up)

  • 이현기;김남훈;이우선;김상용;장의구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1424-1425
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    • 2006
  • A four-step rapid thermal annealing (RTA) process is proposed in order to improve the throughput and stabilize the process, compared to the six-step RTA process. Effects of annealing on the properties of a structure mode of CMOS process in both cases were investigated. The implanted dopant(As, $BF_2$ and Ti/TiN) movement in silicon during different rapid thermal annealing conditions was studied using secondary ion mass spectroscopy (SIMS) technique. These results show that the four-step RTA process significantly improves time effect and throughput (15%) by the condition of ramping up compared to the six-step RTA process.

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메모리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구 (Effect of grain size of Pb(La,Ti)O$_3$thin films grown by pulsed laser deposition for memory device application)

  • 허창회;심경석;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.861-864
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    • 2000
  • Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

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배전 계통에서 손실 감소를 위한 시뮬레이티드 어닐링의 적용 (Application of Simulated Annealing for Loss Reduction in Distribution System)

  • 전영재;최승규;김훈;이승윤;김재철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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    • pp.335-337
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    • 1998
  • This paper presents a efficient algorithm for loss reduction of distribution system by automatic sectionalizing switch operation in distribution systems of radial type. Simulated Annealing can avoid escape from local minima by accepting improvements in cost, but the use of this algorithm is also responsible for an excessive computation time requirement. To overcome this major limitation of Simulated Annealing Algorithm, we may use advanced Simulated Annealing Algorithm. Numerical examples demonstrate the validity and effectiveness of the proposed methodology.

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열간 압연 한 Mg합금의 미세조직과 감쇠능에 미치는 열처리의 영향 (Effect of Heat Treatment on the Microstructure and Damping Capacity of Hot Rolled Magnesium Alloys)

  • 이규현;김권후;강창룡
    • 동력기계공학회지
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    • 제18권4호
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    • pp.66-71
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    • 2014
  • In this study, effect of heat treatment on the microstructure and damping capacity of hot rolled magnesium alloys was investigated. The microstructure of hot rolled magnesium consisted of dendrite structure and $Mg_{17}Al_{12}$ compounds precipitated along the grain boundry. The dendrite structure was dissipated and $Mg_{17}Al_{12}$ compounds was decomposed by annealing treatment, and then they dissolved in ${\alpha}-Mg$. With an increasing the annealing temperature and time, damping capacity was slowly increased by the growth of grain size and decreasing of defects induced by hot rolling. Two kinds of magnesium alloys AZ 31 and AZ 61 after annealing showed no difference in damping capacity.

열처리에 따른 $Y_2O_3$ 박막의 미세 구조 변화와 전기적 특성 변화에 대한 고찰 (The evolution of microstructures and electrical properties of $Y_2O_3$ thin films on si(100) upon annealing treatments)

  • 정윤하;강성관;김은하;고대홍;조만호;황정남
    • 한국진공학회지
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    • 제8권3A호
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    • pp.218-223
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    • 1999
  • We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

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Stress Corrosion Cracking Behavior of Cold Worked 316L Stainless Steel in Chloride Environment

  • Pak, Sung Joon;Ju, Heongkyu
    • 한국주조공학회지
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    • 제40권5호
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    • pp.129-133
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    • 2020
  • The outcomes of solution annealing and stress corrosion cracking in cold-worked 316L austenitic stainless steel have been studied using x-ray diffraction (XRD) and the slow strain rate test (SSRT) technique. The good compatibility with a high-temperature water environment allows 316L austenitic stainless steel to be widely adopted as an internal structural material in light water reactors. However, stress corrosion cracking (SCC) has recently been highlighted in the stainless steels used in commercial pressurized water reactor (PWR) plants. In this paper, SCC and inter granular cracking (IGC) are discussed on the basis of solution annealing in a chloride environment. It was found that the martensitic contents of cold-worked 316L stainless steel decreased as the solution annealing time was increased at a high temperature. Moreover, mode of SCC was closely related to use of a chloride environment. The results here provide evidence of the vital role of a chloride environment during the SCC of cold-worked 316L.