• Product Safety
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• no.3 s.172
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• pp.52-55
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• 2008

• Journal of IKEEE
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• v.13 no.1
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• pp.19-29
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• 2009

For two input ESD protection schemes utilizing the NMOS protection device or the lvtr_thyristor protection device, which is suitable for high-frequency CMOS ICs, we attempt an in-depth comparison study on the HBM ESD protection level in terms of lattice heating inside the protection devices and the peak voltage applied to the gate oxides in the input buffer through DC, mixed-mode transient, and AC analyses utilizing the 2-dimensional device simulator. For this purpose, we suggest a method for the equivalent circuit modeling of the input HBM test environment for the CMOS chip equipped with the input ESD protection circuit. And by executing mixed-mode simulations including up to four protection devices and analyzing the results for five different test modes, we attempt a detailed analysis on the problems which can be occurred in a real HBM test. In this procedure, we explain about the strength and weakness of the two protection schemes as an input protection circuit for high-frequency ICs, and suggest guidelines relating to the design of the protection devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.1
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• pp.29-34
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• 2004

We present the first demonstration of waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 4.63 V and 10uA respectively. The holding voltage and current are respectively 0.59 V, 20uA. The lasing threshold current at the temperature of $25^{\circ}C$ and $10^{\circ}C$ are 111 mAA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561um at a bias current equal to 1.41 times threshold.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.40-46
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• 2006

Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65mA, but also a high on/off contrast ratio more than 50dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.

• KIEE International Transactions on Power Engineering
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• v.3A no.1
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• pp.17-26
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• 2003

In this paper, the comparative steady-state operating performance analysis algorithms of the stand-alone single-phase self-excited induction generator (SEIG) is presented on the basis of the two nodal admittance approaches using the per-unit frequency in addition to a new state variable de-fined by the per-unit slip frequency. The main significant features of the proposed operating circuit analysis with the per-unit slip frequency as a state variable are that the fast effective solution could be achieved with the simple mathematical computation effort. The operating performance results in the simulation of the single-phase SEIG evaluated by using the per-unit slip frequency state variable are compared with those obtained by using the per-unit frequency state variable. The comparative operating performance results provide the close agreements between two steady-state analysis performance algorithms based on the electro-mechanical equivalent circuit of the single-phase SEIG. In addition to these, the single-phase static VAR compensator; SVC composed of the thyristor controlled reactor; TCR in parallel with the fixed excitation capacitor; FC and the thyristor switched capacitor; TSC is ap-plied to regulate the generated terminal voltage of the single-phase SEIG loaded by a variable inductive passive load. The fixed gain PI controller is employed to adjust the equivalent variable excitation capacitor capacitance of the single-phase SVC.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.3B no.1
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• pp.1-9
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• 2003

This paper deals with the nodal admittance approach steady-state frequency domain analysis of the three-phase self-excited induction generator (SEIG) driven by the variable speed prime mover as the wind turbine. The steady-state performance analysis of this power conditioner designed for the renewable energy is based on the principle of equating the input mechanical power of the three-phase SEIG to the output mechanical power of the variable speed prime mover mentioned above. Us-ing the approximate frequency domain based equivalent circuit of the three-phase SEIG. The main features of the present algorithm of the steady-state performance analysis of the three-phase SEIG treated here are that the variable speed prime mover characteristics are included in the approximate equivalent circuit of the three-phase SEIG under the condition of the speed changes of the prime mover without complex computations processes. Furthermore, a feedback closed-loop voltage regulation of the three-phase SEIG as a power conditioner which is driven by variable speed prime movers such as the wind turbine(WT) employing the static VAR compensator(SVC) circuit composed of the thyristor phase controlled reactor(TCR) and the thyristor switched capacitor(TSC) controlled by the PI controller is designed and considered for wind-turbine driving power conditioner.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.4
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• pp.278-284
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• 2009

This paper presents a firing angle controller of a thyristor converter for DC power supply using PID controller with parallel data loop to improve the dynamic response. The proposed parallel data loop for firing angle controller of 3-phase semi-converter, generates pre-measured firing angle according to reference voltage and load current. With the approximated firing angle according to operating conditions, the output voltage can fast keep the reference value with small voltage error. And the PID controller compensates the output voltage error from the firing angle of parallel data loop. In order to reduce the sudden changing of the data from current ripple, a simple digital low pass filter is used to determine the output data. The proposed control scheme is verified by the experimental test of a practical 50[A] grade thyristor converter system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.104-112
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• 2002

In this paper, it is suggested that the selection method of parameter of Power System Stabilizer(PSS) with robustness in low frequency oscillation for Thyristor Controlled Series Capacitor(TCSC) using Geletic Algorithm(GA). A TCSC meddle consists of a stories capacitor and a parallel path with a thyristor valve and a series inductor. Also in in parallel, as is typical with series capacitor applications, is a metal-oxide varistor(MOV) for overvoltage protection. The proposed PSS parameters are optimized using GA in order to maintain optimal operation of TCSC which is expected to be applied in transmission system to achieve a number of benefits under the various operating conditions. In order to verify the robustness of the proposed method, we considered the dynamic response of angular velocity deviation and terminal voltage deviation under a power fluctuation and rotor angle variation.

• Journal of the Korean Society of Safety
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• v.37 no.1
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• pp.12-19
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• 2022

Circuit breakers are a crucial factor in ensuring the safety of a Direct Current (DC) grid. One type of DC circuit breaker, the Z-source DC circuit breaker (ZCB), uses a thyristor, which is a type of semiconductor switch. In the event of a fault in the circuit, the ZCB isolates the fault by generating a zero crossing current in the thyristor. The thyristor quickly and actively isolates the fault while generating a zero crossing current, but thyristor switch cannot control turn-off and the allowable current is lower than the current of the mechanical switch. Therefore, it is best to use a mechanical switch with a high allowable current capacity that is capable of on/off control. Due to the slow reaction time of mechanical switches, they may not isolate the fault during the zero crossing current time interval created by the existing circuit. In this case, the zero crossing current time can be increased by using the property that hinders the rapid change in the current of the inductor. This paper will explore whether adding system inductance to increase the zero crossing current time interval is a solution to this problem. The simulation of changing inductor and capacitor (LC) of the circuit is repeated to find an optimal change in the zero crossing current time according to the LC change and provides an inductor and capacitor range optimized for a specific load. The inductor and capacitor range are expected to provide optimization information in the form LC values for future applications of ZCB's using a mechanical switch.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.259-266
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• 2004

In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.