• 한국기계가공학회지
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• 제15권1호
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• pp.26-33
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• 2016

In this study, a new method to develop a fixed diamond wire for silicon wafer machining by the multi-wire cutting method was developed. The new twist diamond wire has improved performance with high breaking strength and chip flutes structure. According to these characteristics, the new twist diamond wire can be used in the higher speed multi-wire cutting process with a long lifetime. Except the design of the new structure, the twist diamond wire is coating by electroless-electroplating process. It is good for reducing breakage and the falling-off of diamond grains. Based on the silicon material removal mechanism and performance of the wire-cutting machine, the optimal processing condition of the new twist diamond wire has been derived via mathematical analysis. At last, through the tensile testing and the machining experiments, the performance of the twist diamond wire has been obtained to achieve the development goals and exceed the single diamond wire.

• Journal of Welding and Joining
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• 제29권1호
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• pp.46-51
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• 2011

TSV technology raises several reliability concerns particularly caused by thermally induced stress. In traditional package, the thermo-mechanical failure mostly occurs as a result of the damage in the solder joint. In TSV technology, however, the driving failure may be TSV interconnects. In this study, the thermomechanical reliability of TSV technology is investigated using finite element method. Thermal stress and thermal fatigue phenomenon caused by repetitive temperature cycling are analyzed, and possible failure locations are discussed. In particular, the effects of via size, via pitch and bonding pad on thermo-mechanical reliability are investigated. The plastic strain generally increases with via size increases. Therefore, expected thermal fatigue life also increase as the via size decreases. However, the small via shows the higher von Mises stress. This means that smaller vias are not always safe despite their longer life expectancy. Therefore careful design consideration of via size and pitch is required for reliability improvement. Also the bonding pad design is important for enhancing the reliability of TSV structure.

• 한국정밀공학회지
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• 제27권10호
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• pp.40-44
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• 2010

Laser drilling is an enabling technology for Through Silicon Via (TSV) interconnect applications. Recent advances in picoseconds laser drilling of blind, micron sized vias in silicon is presented here highlighting some of the attractive features of this approach such as excellent sidewall quality. In this study, we dealt with comparison of heat affection around drilled hole between a picosecond laser and a nanosecond laser process under the UV wavelength. Points which special attention should be paid are that picosecond laser process lowered experimentally recast layer, surface debris and micro-crack around hole in comparison with nanosecond laser process. These finding suggests that laser TSV process has possibility to drill under $10{\mu}m$ via. Finally, the laser drilling platform was constructed successfully.

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.49-53
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• 2011

TSV(through-silicon-via)를 이용한 3차원 Si 칩 패키징 공정 중 전기 도금을 이용한 비아 홀 내 Cu 고속 충전과 범핑 공정 단순화에 관하여 연구하였다. DRIE(deep reactive ion etching)법을 이용하여 TSV를 제조하였으며, 비아홀 내벽에 $SiO_2$, Ti 및 Au 기능 박막층을 형성하였다. 전도성 금속 충전에서는 비아 홀 내 Cu 충전율을 향상시키기 위하여 PPR(periodic-pulse-reverse) 전류 파형을 인가하였으며, 범프 형성 공정에서는 리소그라피(lithography) 공정을 사용하지 않는 non-PR 범핑법으로 Sn-3.5Ag 범프를 형성하였다. 전기 도금 후, 충전된 비아의 단면 및 범프의 외형을 FESEM(field emission scanning electron microscopy)으로 관찰하였다. 그 결과, Cu 충전에서는 -9.66 $mA/cm^2$의 전류밀도에서 60분간의 도금으로 비아 입구의 도금층 과성장에 의한 결함이 발생하였고, -7.71 $mA/cm^2$에서는 비아의 중간 부분에서의 도금층 과성장에 의한 결함이 발생하였다. 또한 결함이 생성된 Cu 충전물 위에 전기 도금을 이용하여 범프를 형성한 결과, 범프의 모양이 불규칙하고, 균일도가 감소함을 나타내었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.649-657
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• 2014

In this study, the effects of the frequency-dependent characteristics of through-silicon vias (TSVs) on the performance of 3D ICs are examined by evaluating a typical interconnection structure, which is composed of 32-nm CMOS inverter drivers and receivers connected through TSVs. The frequency-domain model of TSVs is extracted in S-parameter from a 3D electromagnetic (EM) method, where the dimensional variation effect of TSVs can be accurately considered for a comprehensive parameter sweep simulation. A parametric analysis shows that the propagation delay increases with the diameter and height of the TSVs but decreases with the pitch and liner thickness. We also investigate the crosstalk effect between TSVs by testing different signaling conditions. From the simulations, the worst signal integrity is observed when the signal experiences a simultaneously coupled transition in the opposite direction from the aggressor lines. Simulation results for nine-TSV bundles having regular and staggered patterns reveal that the proposed method can characterize TSV-based 3D interconnections of any dimensions and patterns.

• 센서학회지
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• 제21권1호
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• pp.34-38
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• 2012

We have developed a cost effective test socket for ball grid array(BGA) integrated circuit(IC) packages using BeCu metal sheet as a test probe. The BeCu furnishes the best combination of electrical conductivity and corrosion resistance. The probe of the test socket was designed with a BeCu cantilever. The cantilever was designed with a length of 450 ${\mu}m$, a width of 200 ${\mu}m$, a thickness of 10 ${\mu}m$, and a pitch of 650 ${\mu}m$ for $11{\times}11$ BGA. The fabrication of the test socket used techniques such as through-silicon-via filling, bonding silicon wafer and BeCu metal sheet with dry film resist(DFR). The test socket is applicable for BGA IC chip.

• Bulletin of the Korean Chemical Society
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• 제33권1호
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• pp.83-89
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• 2012

Due to the potential importance and usefulness, usage of highly ordered nanoporous anodized aluminum oxide can be broadened in industry, when highly ordered anodized aluminum oxide can be placed on a substrate with controlled thickness. Here we report a facile route to highly ordered nanoporous alumina with the thickness of hundreds-of-nanometer on a silicon wafer substrate. Hexagonally or tetragonally ordered nanoporous alumina could be prepared by way of thermal imprinting, dry etching, and anodization. Adoption of reusable polymer soft molds enabled the control of the thickness of the highly ordered porous alumina. It also increased reproducibility of imprinting process and reduced the expense for mold production and pattern generation. As nanoporous alumina templates are mechanically and thermally stable, we expect that the simple and costeffective fabrication through our method would be highly applicable in electronics industry.

• Korean Chemical Engineering Research
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• 제45권6호
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• pp.677-679
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• 2007

$SiCl_4$ 증기를 수증기에 의해 처음으로 2단계 가수분해시키는 방식에 의해 200~300 nm 크기의 단분산에 가까운 구형 실리카 분말을 건식으로 제조하였다. 1단계로 회분식 반응기를 사용하여 $150^{\circ}C$ 정도의 저온에서 부분 가수분해에 의해 단분산에 가까운 silicon oxychloride 구형 입자를 형성시킨 후 2단계로 관형반응기를 사용하여 $1,000^{\circ}C$에서 가수분해 반응을 완료시킴으로써 1단계 이후의 입자 형상이 거의 그대로 보존된 실리카 분말을 제조하였다.

• 한국태양에너지학회 논문집
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• 제31권4호
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• pp.103-111
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• 2011

Laser drilling of vias is the one of key technologies in developing Emitter-Wrap Through(EWT) solar cell which is particularly attractive due to the use of industrial processing and common solar grade p-type silicon materials. While alternative economically feasible drilling process is not available to date, the processing time and laser induced damage should be as small as possible in this process. This paper provides an overview on various factors that should be considered in using the laser via drilling technology for developing highly efficient and industrially applicable EWT solar cells.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.697-698
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• 2009