• 제목/요약/키워드: threshold effect

검색결과 1,510건 처리시간 0.035초

대면적 고해상도를 위한 AMOLED(Active Matrix Organic Light Emitting Diode)의 문턱전압 보상회로 (A New AMOLED Pixel Structure Compensating Threshold Voltage of TFT for Large-Sized and High Resolution Display)

  • 유장우;정민철;황상준;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.529-530
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    • 2005
  • A voltage driving AMOLED(Active Matrix Organic Light Emitting Diode) is useful for large-sized, high resolution OLED display. The conventional 2-TFTs, 1-CAP AMOLED circuit suffer from the threshold voltage variation of TFT. In this paper, a new AMOLED structure is proposed. It is composed of 5-TFTs and 2-capacitors. It is described that the operating principle and the characteristics of the proposed structure and is verified the performance by HSPICE simulation. The result of simulation shows that the effect of the threshold voltage variation in this circuit, is able to neglect.

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The Effect of Minimum Energy Path Curvature on the Dynamic Threshold for Collision-induced Dissociation

  • Kihyung Song
    • Bulletin of the Korean Chemical Society
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    • 제12권5호
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    • pp.529-536
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    • 1991
  • In this paper, the question whether the curvature of the minimum energy path can affect the dynamic threshold was tested using the boundary trajectory method developed by Chesnavich and coworkers. For nonreactive system, the MO EXP model potential surface was used with modified equilibrium distance to control the curvature. The results showed that there is no relation between the curvature and the dynamic threshold. In order to study the reactive system, a generalization of the boundary trajectory method was achieved to apply on the nonsymmetric system. We have found no correspondence between the curvature and the dynamic threshold of the system. It was also shown that the fate of the trajectories strongly depends on the shape of potential surface around the turning points along the symmetric stretch line.

성인의 구강보건행태에 따른 미각인지역치, 타액분비량이 DMFT, OHIP-14에 미치는 영향 (Effect of Adult's Taste Recognition Threshold and Salivary Flow Amount on DMFT and OHIP-14 depending on Oral Health Behavior)

  • 김기욱;민경진
    • 한국산학기술학회논문지
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    • 제14권5호
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    • pp.2234-2243
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    • 2013
  • 이 연구는 대구지역 40대 이상 성인을 대상으로 6단계의 용액을 이용하여 미각인지역치(단맛, 짠맛, 신맛, 쓴맛), 흡습지를 사용하여 타액분비량을 측정하여 DMFT index와 OHIP-14와의 관련성을 알아보고자 하였다 그 결과 구강보건실천은 미각인지역치에, 식습관은 타액분비량에 영향을 주고, 미각인지역치 중 단맛과 신맛, 그리고 타액분비량은 DMFT index에 영향을 주어 구강건강상태가 좋으면 OHIP-14도 높아지는 결과를 나타내었다. 구강보건실천도와 식습관이 좋은 사람이 미각과 타액분비량, DMFT index에 영향을 주는 것을 확인할 수 있었다. 이 결과는 OHIP-14를 향상시키기 위해서는 구강보건실천도를 높여 미각인지역치 감수성을 높이고 식습관을 개선하여 타액분비량을 증가시켜 DMFT index를 감소시키는 것이 무엇보다 중요하다고 생각된다. 지금까지는 개인의 미각인지역치 수준의 평가 없이 일률적인 식이교육이 이루어지고 있어 구강보건교육 시 대상자의 미각인지역치를 측정하여 알려줌으로써 스스로 조절할 수 있는 교육 프로그램 개발이 필요할 것으로 생각된다.

변온조건이 파밤나방 [Spodoptera exigua (H bner)] 발육에 미치는 영향 (Effect of Fluctuating Temperature on Development of the Beet Armyworm, Spodoptera exigua (H bner))

  • 김용균;권도형;김찬영
    • 한국토양동물학회지
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    • 제5권2호
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    • pp.119-123
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    • 2000
  • 변온조건이 파밤나방 (Spodoptera exigua (H bner)) 유충과 영의 발육에 미치는 영향이 분석되어졌다. 정온조건에서 사육하였을 때 발육영점온도는 발육태와 유충영기에 따라 다르지만 평균 13$^{\circ}C$로 추정되었다. 이 발육영점온도를 기준으로 동등한 일일유효온도를 갖는 세 가지 다른 발육 온도조건을 설정하였다. 정온조건에 비해 변온조건은 발육속도를 뚜렸하게 변화시켰다. 동일한 최고온도(2$0^{\circ}C$)를 가졌던 두 가지 일일 변온조건중에서 저온기간이 상대적으로 높았던 조건(1$0^{\circ}C$)은 발육속도를 촉진시킨 반면 저온기간의 온도가 낮았던 조건(5$^{\circ}C$C)은 오히려 저해효과를 나타냈다.

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A New Two-Dimensional Model for the Drain-Induced Barrier Lowering of Fully Depleted Short-Channel SOI-MESFET's

  • Jit, S.;Pandey, Prashant;Pal, B.B.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권4호
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    • pp.217-222
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    • 2003
  • A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

하절기 기온상승으로 인한 사망의 기여부담 변화 (Changes in the Attributable Burden of High Temperatures on Deaths)

  • 하종식
    • 한국환경보건학회지
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    • 제38권6호
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    • pp.460-471
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    • 2012
  • Objectives: Due to global warming resulting from climate change, there has been increasing interest in the relationship between temperature and mortality. These temperature-related deaths depend on diverse conditions related to a given place and person, as well as on time. This study examined changes in the impact of high temperatures on death in summer, using the effect and burden of elevated temperatures on deaths in Seoul and Daegu. Methods: A Poisson regression model was used to estimate short-term temperature effects on mortality. Temperature-related risks were divided into three time periods of equal length (1996-2000, 2001-2005, and 2006-2010). In addition, in order to compare the impact of high temperatures on deaths, this study calculated the proportion of attributable deaths to population, which simultaneously considers the threshold and the slope above the threshold. Results: The effect and burden of high temperatures on deaths is high in Daegu. However, the impact (i.e. the effect and burden) of elevated summer temperatures on deaths has declined over the past 15 years. Sensitivity analyses using alternative thresholds show the robustness of these findings. Conclusion: This study suggests that the attributable burden of high temperatures on deaths to be more plausible than relative risk or threshold for comparing the health impact of high temperatures across populations. Moreover, these results contain important implications for the development or the adjustment of present and future strategies and policies for controlling the temperature-related health burden on populations.

고빈도-저강도 경피신경전기자극이 혈장 $\beta-endorphin$ 농도에 미치는 영향 (Effect of Conventional Transcutaneous Electrical Nerve Stimulation on Plasma $\beta-endorphin$ Level)

  • 이재형;박춘서;강정구
    • The Journal of Korean Physical Therapy
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    • 제5권1호
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    • pp.39-46
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    • 1993
  • The purpose of this study was to examine the effect and $\beta-endorphin$ level as conventional transcutaneous electrical nerve stimulation (TENS) application on acupuncture paints. Twelve healthy adult male volunteers were participated in this study. The subjects were assigned to TENS group (n=6) and naloxone group (n=6). The LI 3 and M 10 meridian points of dominant arm were stimulated comfortably with 100 pps, $75{\mu}s$ conventional TENS for 30 minutes. Experimental pain threshold measurement and plasma $\beta-endorphin$ level were detected before and after conventional TENS application. Experimental pain threshold increased significantly (p<.01) but plasma $\beta-endorphin$ level was not change in TENS group. Experimental pain threshold increased significantly (p<.01) but plasma $\beta-endorphin$ level was not change in naloxone group. In this study, the conventional TENS induced analgesic effect, and plama $\beta-endorphin$ level was not increase concomitantly with analgesia. These results suggest that the $\beta-endorphin$ did not involved in conventional TENS analgesia.

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왕지네 Venom을 사용한 이온토포레시스가 근육통에 미치는 영향 (Analgesic Effect of Centipede Venom Iontophoresis for Myalgia)

  • 박지환;박상옥
    • The Journal of Korean Physical Therapy
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    • 제10권2호
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    • pp.1-12
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    • 1998
  • This study was to determine whether iontophoresis application of centipede venom would produce analgesic effect for clinical practice. Sixty patients suffered from musculoskeletal diseases who lived in Taejon city were analyzed by double-blind central study. After pre treatment, post treatment, post 20 minutes, post 40 minutes iontophoresis using centipede venom, we assessed the response to pin-prick sensation with Endomed 582 in myalgia patients. The results were as follows, control group showed pain threshold of 1.76, 2.03, 2.01, 2.02mA after treatment, but the pain threshold of 1.76, 2.21, 3.85, 3.87mA after iontophoresis application in study group. The pain threshold of Notermans pain score after 20-minute and 40-minute centipede venom iontophoresis group using centipede venom was higher than that after non-centipede venom iontophoresis group. The results showed that by the increasing the analgesic effect in the centipede venom iontophoresis group, especially in time of post 20 minutes after iontophoresis treatment. So we considered that the iontophoresis using centipede venom could be reduced pain of myalgia in musuloskeletal disease patients.

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실내 위치 추정 시스템에서의 동적 트리거 임계값에 관한 연구 (A Study on Dynamic Trigger Threshold in Indoor Positioning System)

  • 오종택
    • 한국인터넷방송통신학회논문지
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    • 제15권6호
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    • pp.155-161
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    • 2015
  • 스마트폰의 이용이 크게 활성화됨에 따라 실내에서의 스마트폰의 위치 추정에 관한 연구 개발이 매우 활발하다. 스마트폰에서 발생된 음향 신호를 여러 개의 마이크로 수신하여 스마트폰의 상대 위치를 추정하는 연구가 진행되어 왔으며, 음향 신호의 전파 다중 경로 문제를 완화시키기 위한 트리거 신호가 제안되어 효과가 검증되었다. 그러나 단순한 트리거 방식의 경우 스마트폰과 측정 장치 사이의 거리 차이나, 주변 소음이 있는 경우에 오차가 발생하는 문제가 있다. 본 논문에서는 이 문제를 해결하기 위한 동적 트리거 임계값 기술이 제안되었고 실험으로 검증되었다.

이중게이트 MOSFET에서 채널도핑분포의 형태에 따른 문턱전압특성분석 (Analysis of Channel Doping Profile Dependent Threshold Voltage Characteristics for Double Gate MOSFET)

  • 정학기;한지형;이재형;정동수;이종인;권오신
    • 한국정보통신학회논문지
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    • 제15권6호
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    • pp.1338-1342
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    • 2011
  • 본 연구에서는 차세대 나노소자인 DGMOSFET에서 발생하는 단채널효과 중 하나인 문턱전압특성에 대하여 분석하고자 한다. 특히 포아송방정식을 풀 때 전하분포를 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였으며 이때 가우시안 함수의 변수인 이온주입범위 및 분포편차에 대하여 문턱전압의 변화를 관찰하고자 한다. 포아송방정식으로 부터 해석학적 전위분포 모델을 구하였으며 이를 이용하여 문턱전압을 구하였다. 문턱전압은 표면전위가 페르미전위의 두배가 될 때 게이트 전압으로 정의되므로 표면전위의 해석학적 모델을 구하여 문턱전압을 구하였다. 본 연구의 모델이 타당하다는 것을 입증하기 위하여 포텐셜 분포값을 수치해석학적 값과 비교하였다. 결과적으로 본 연구에서 제시한 포텐셜모델이 수치해석학적 시뮬레이션모델과 매우 잘 일치하였으며 DGMOSFET의 도핑분포 함수의 형태에 따라 문턱전압 특성을 분석하였다.