• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1536-1537
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• 2005

We have made point electron sources using carbon nanotubes (CNTs). For the fabrication of point electron sources, CNTs were dispersed in a solution and attached on electrochemically etched W tips using electrophoresis. In our study, we have utilized various CNTs such as single-walled CNT (SWCNT), multiwalled CNT (MWCNT), and thin-MWCNT and threshold current, turn-on voltage, filed enhancement factor of each emitter have been studied upon a tube/bundle diameter and length. In addition, fieldemitted electron energy distribution of various CNT emitters is characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.67-67
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• 2007

This study investigated the effect of $H_2$ upon the growth of CNTs by changing the ratios of $H_2$ to Ar during the growth using $C_2H_2$. With higher contents of $H_2$ in Ar, CNTs became longer and thinner, resulting in their higher aspect ratios.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.264-264
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• 2010

Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

• Polymer(Korea)
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• v.31 no.5
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• pp.422-427
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• 2007

Semiconducting layers are thin rubber film between electrical cable wire and insulating polymer layers having a volume resistivity of ${\sim}10^2{\Omega}cm$. Commercial semiconducting layers ire composed of polymer composites reinforced with more than 30 wt% of carbon blacks. A new semiconducting material was suggested in this study based on the carbon nanotube(CNT)-reinforced polymer nanocomposites. CNT-reinforced polymer nanocomposites were prepared by solution mixing and precipitation with various polymer type and dual filler system. The mechanical, thermal and electrical properties were investigated as a function of polymer type and dual filler system based on CNT and carbon black. The volume resistivity of composites was strongly related with the crystallinity of polymer matrix. With the decreased crystallinity, the volume resistivity decreased linearly until a critical point, and it remained constant with further decreasing the crystallinity. Dual filler system also affected the volume resistivity. The CNT-reinforced nanocomposite showed the lowest volume resistivity. When a small amount of carbon black(CB) was replaced the CNT, the crystallinity increased considerably leading to a higher volume resistivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.150-150
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• 2010

Carbon nanotubes have drawn attention as one of the most promising emitter materials ever known not only due to their nanometer-scale radius of curvature at tip and extremely high aspect ratios but also due to their strong mechanical strength, excellent thermal conductivity, good chemical stability, etc. Some applications of CNTs as emitters, such as X-ray tubes and microwave amplifiers, require high current emission over a small emitter area. The field emission for high current density often damages CNT emitters by Joule heating, field evaporation, or electrostatic interaction. In order to endure the high current density emission, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects: highly crystalline CNT materials, low gas emission during electron emission in vacuum, optimal emitter distribution density, optimal aspect ratio of emitters, uniform emitter height, strong emitter adhesion onto a substrate, etc. We attempted a novel approach to fabricate CNT emitters to meet some of requirements described above, including highly crystalline CNT materials, low gas emission, and strong emitter adhesion. In this study, CNT emitters were fabricated by filtrating an aqueous suspension of highly crystalline thin multiwalled CNTs (Hanwha Nanotech Inc.) through a metal mesh. The metal mesh served as a support and fixture frame of CNT emitters. When 5 ml of the CNT suspension was engaged in filtration through a 400 mesh, the CNT layers were formed to be as thick as the mesh at the mesh openings. The CNT emitter sample of $1{\times}1\;cm^2$ in size was characteristic of the turn-on electrical field of 2.7 V/${\mu}m$ and the current density of 14.5 mA at 5.8 V/${\mu}m$ without noticeable deterioration of emitters. This study seems to provide a novel fabrication route to simply produce small-size CNT emitters for high current emission with reliability.