• Journal of the Korean Society of Safety
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• v.19 no.3 s.67
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• pp.51-56
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• 2004

Conductive polymer blends and composites are widely used for different safety application such as electrostatic charge dissipation(ESD), electromagnetic interference(EMI) shielding, electrostatic prevention and safety chemical sensor. In order to prepare a impedance-type humidity sensor that is durable at high humidities and high temperature, electically conductive polymer blends based on diallyldimethylammonium chloride(DADMAC) and epoxy were prepared in this study. The polymer blends type conductive ionomer exhibits reaction each other DADMAC and epoxy in FT-IR and DSC analysis. The blends material was traced by new peak at 1600cm-1 and appeard improvement of thermal resistance by melting point shift. Alumina substrate was deposited a pair of gold electrodes by screen printing. The blend material were spin-coated with a thin film type on the surface of alumina substrate. The polymer bleld type sensor exhibits a linear impedance increasing better than DADMAC coated humidity sensor. Also it shows good sensitivity, low hysteresis and durability against high humidity.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.10
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• pp.1048-1053
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• 2002

In this paper, thin film bulk acoustic resonator(TFBAR) lattice and balanced type filter topologies are designed and fabricated. Aluminium nitride and platinum are used for piezoelectric material and top and bottom electrodes, respectively. Air-gap is placed to avoid silicon substrate loading effect and the performance of these lattice and balanced filters is compared with ladder filters. These filters have selectivity over 15 dB for lattice type and 30 dB for balanced type and reveal wider bandwidth of the ladder filters. For balanced type filters, minor tuning procedure is not needed and they are readily available for RF filter in wireless applications.

• Proceedings of the KIEE Conference
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• summer
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• pp.1130-1132
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• 2004

In this paper, we investigated the operational characteristics of the fault current limiting in the The flux-lock type high-Tc superconducting fault current limiter. The flux-lock type high-Tc superconducting fault current limiter was consisted of primary and secondary copper coils that flux was locked on iron core and YBCO thin film. The operational characteristic of a flux-lock type SFCL dependent on winding direction of coil 1 and coil 2, and the number of turns of coil 1 and coil 2, inductances of the coils, saturation in iron core, the properties of superconducting element etc. In this cases, we investigated the fault currents limiting characteristics of the flux-lock type SFCL when winding direction of coil 1 and coil 2 was subtractive polarity winding.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1450-1454
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• 2007

This paper presents a microfabricated Clark-type sensor which exactly can measure dissolved oxygen in the cell containing solution. We designed, fabricated, and characterized a microfabircated Clark-type oxygen sensor for measuring dissolved oxygen. The microfabricated oxygen sensor consists of 3-electrodes on a glass substrate, a FEP (Fluorinated ethylene propylene) oxygen-permeable membrane, and PDMS (Polydimethylsiloxane) reservoir for storing sample solution. Thin-film Ag/AgCl was employed as a reference electrode and its durability was verified by obtaining a stable open circuit potential for 2 hours against a commercial Ag/AgCl electrode and a stable cyclic voltammetry curve. Selectivity, response time, and linearity of the fabricated oxygen sensor were also verified well by cyclic voltammetry and amperometry depending. The fabricated oxygen sensor showed a 90% response time of 40sec and an excellent linearity with a correlation coefficient of 0.994.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.2
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.139-144
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• 2003

A flat type micro gas sensor was fabricated on the p-type silicon wafer with low stress Si$_3$N$_4$, whose thickness is 2 ${\mu}{\textrm}{m}$, using MEMS technology. WO$_3$ thin film as a sensing material for detection of NO$_2$ gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$-$600^{\circ}C$) for one hour. NO$_2$ sensitivities were investigated for the WO$_3$ thin films with different annealing temperatures. The highest sensitivity was obtained for the samples annealed at $600^{\circ}C$ when it was operated at 20$0^{\circ}C$. The results of XRD analysis showed the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibits higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}/R_{air},$ operating at 20$0^{\circ}C$ to 5 ppm NO$_2$ of the sample annealed at $600^{\circ}C$ were approximately 90.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.65-69
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• 2009

Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.