• Korean Journal of Materials Research
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• v.26 no.1
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• pp.42-46
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• 2016

The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.192-196
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• 2002

This paper describes on the fabrication and characteristics of a metal thin-film pressure sensor based on Cr strain-gauges for harsh environment applications. The Cr thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Cr thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21 $mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.170-173
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• 2006

[ $CuInS_2$ ] filims were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated, Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant (a) of and grain size of the film tin s ambient were appeared a little larger than those in only Vacuum The films in S ambient were p-type with resistive of around $10^{-1}{\Omega}cm$ and optical energy band gaps of the films in S ambient were appeared a little larger than those in only Vacuum. Analysis of the optical energy band gap of $CuInS_2$ thin films a value of 1.53eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.147-150
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• 2019

There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During $O_2$ plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.105-107
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• 2006

Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.33-38
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• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.373-378
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• 2015

The structure of the human ear is divided into the outer ear, the middle ear, and the inner ear. The inner ear includes the cochlea that plays a very important role in hearing. Recently, the development of an artificial cochlear device for the hearing impaired with cochlear damage has been actively researched. Research has been carried out on the biomimetic piezoelectric thin film ABM (Artificial Basilar Membrane) in particular. In an effort to improve the frequency separation performance of the existing piezoelectric thin film ABM, this paper presents the design, fabrication, and characterization of the production and performance of a partially etched-type ABM material. $O_2$ plasma etching equipment was used to partially etch a piezoelectric thin film ABM to make it more flexible. The mechanical-behavior characterization of the manufactured partially etched-type ABM showed that the overall separation frequency range shifted to a lower frequency range more suitable for audible frequency bandwidths and it displayed an improved frequency separation performance. In addition, the maximum magnitude of the vibration displacement at the first local resonant frequency was enhanced by three times from 38 nm to 112 nm. It is expected that the newly designed, partially etched-type ABM will improve the issue of cross-talk between nearby electrodes and that the manufactured partially etched-type ABM will be utilized for next-generation ABM research.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.555-564
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• 2003

WDM thin film filters for fiber optical communication were designed using Fabry-Prot type multiple cavity filters and an equivalent thin film technique. As the number of cavities in multiple cavity filters increases, it becomes difficult to design the filters due to a great number of variables (the number of cavities, period of reflectors, order of spacers). To solve the problem of design, we treated the fewest variables, regarding symmetrical thin films as equivalent layers, and we applied structural and numerical formulas based on an analysis method of multiple cavity filters. The equivalent thin film technique was able to provide systematic and quantitative design of the WDM thin film filters.