• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.193-199
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• 2013

The regional distribution of magnetic isotropy depending on the post annealing condition for the dual-type structure GMR-SV (giant magnetoresistance-spin valve) of NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multilayer was investigated. The rotation of in-plane ferromagnetic layer induced by controlment of the post annealing temperature inside of the vacuum chamber. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetization easy axis of the free layer and the pinned layer are measured by between $0^{\circ}$ and $360^{\circ}$ angles for the applied fields. The optimum annealing temperature having a steady and isotropy magnetic sensitivity of 1.52 %/Oe was $107^{\circ}C$ in the rotational section of $0{\sim}90^{\circ}$. By investigating the switching process of magnetization for an arbitrary measuring direction, the in-plane orthogonal magnetization for the dual-type GMR-SV multilayer can be used by a high sensitive biosensor for detection of magnetized micro-beads.

• Journal of the Korean Magnetics Society
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• v.27 no.2
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• pp.41-48
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• 2017

Recent study shows that ordered alloy of $L1_2$ $XPt_3$ (M = V, Cr, Mn, Co, and Fe) exhibits various magnetic phases such as ferromagnetic-to-antiferromagnetic transition at the $MnPt_3$ surface. Moreover, it has been argued that $CrPt_3$, in particular, possess large magnetocrystalline anisotropy and Kerr rotation with possible violation of Hund's rule. As such, we extend our work to thickness dependence of the magnetic structure of $CrPt_3$ thin film using density functional theory. Magnetic ground state of the bulk $CrPt_3$ turns out to be ferromagnetic (FM), where other magnetic phases such as A-type (A-AF), C-type (C-AF), and G-type antiferromagnetic (G-AF) state have higher total energies than FM by 0.517, 0.591, and 0.183 eV, respectively, and magnetic moments of Cr in bulk are respectively 2.807 (FM), 2.805 (A-AF), 2.794 (C-AF) and $2.869_{{\mu}_B}$ (G-AF). We extend our study to $CrPt_3$(001) thin films with CrPt-and Pt-termination. The thickness and surface-termination dependences of magnetism are investigated for 3-9 monolayers (ML), where different magnetic phases from bulk emerge: C-AF for CrPt-terminated 3 ML and G-AF for Pt-terminated 5 ML have energy difference relative to FM by 8 and 54 meV, respectively. Furthermore, thickness- and surface-termination-dependent magnetocrystalline anisotropies of the $CrPt_3$(001) films are discussed.

• Journal of the Korean Chemical Society
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• v.60 no.6
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• pp.402-409
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• 2016

Thin films of lead sulfide colloidal quantum dots (CQDs) of 2.8 nm in diameter are fabricated and their surfaces are passivated by 3-mercaptopropionic acid (MPA) ligand or hybrid type ($MPA+CdCl_2$) ligand, respectively. The changes in valence band electronic structure and atomic composition of each PbS CQD film upon post-treatment such as air, N2 annealing or UV/Ozone have been studied by photoelectron spectroscopy. The air annealing makes the CQD fermi level to move toward the valence band leading to "p-type doping" regardless of ligand type. The UV/Ozone post-treatment generates $Pb(OH)_2$, $PbSO_x$ and PbO on both CQD surfaces. But the amount of the PbO has been reduced in hybrid type ligand case, especially. That is probably because the extra Pb cations in (111) surface are additionally passivated by $Cl_2$ ligand, which limits the reaction between the Pb cation and ozone.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.38-45
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• 2006

The superconducting fault current limiters(SFCLs) provide the effect such as enhancement in power system reliability due to limiting the fault current within a few miliseconds. Among various SFCLs we have developed a flux-lock type SFCL and exploited a special design to effectively reduce the fault current according to properly adjustable magnetic field after the short-circuit test. This SFCL consists of two copper coils wound in parallel on the same iron core and a component using the YBCO thin film connected in series to the secondary copper coil. Meanwhile, operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. To analyze the operational characteristics, we compared closed-loop with open-loop iron core. When the applied voltage was 200[Vrms] in the additive polarity winding, the peak values of the line current the increased up to 30.71[A] in the closed-loop and 32.01[A] in the open-loop iron core, respectively. On the other hand, in the voltages generated at current limiting elements were 220.14[V] in the closed-loop and 142.73[V] in the opal-loop iron core during first-half cycle after fault instant under the same conditions. We confirmed that the open-loop iron core had lower power burden than in the closed-loop iron core. Consequently, we found that the structure of iron core enabled the flux-lock type SFCL at power system to have the flexibility.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.47 no.3
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• pp.227-235
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• 2021

In this study, we have prepared pure planar-type ZnO and calamine powder containing both ZnO and Fe₂O₃ components as a raw material for cosmetics with UV and blue band blocking functions. The planar-type ZnO ceramic powder having a high aspect ratio in the range of 20:1 to 50:1 was synthesized by precipitation method in a zinc acetate and sodium citrate mixed solution with the electrolyte obtained by power generation with a zinc-air battery. The content of Fe₂O₃ in the artificial calamine ceramic powder could be increased by increasing the amount of iron chloride solution added, and in this case, some of the blue region of visible light and ultraviolet light were remarkably absorbed. When potassium acetate was added, the decomposition of the Zn(OH)₄^2- anion in the solution was promoted to facilitate the growth of ZnO crystal in the form of a barrier wall in the vertical direction on the (0001) plane, which could increase UV absorption by providing more opportunities. By controlling the amount of iron chloride solution and potassium acetate solution added, the composition and shape of the thin film plate-shaped artificial calamine ceramic powder can be optimized, and when applied to cosmetic formulations, the light transmittance of the blue region can be greatly reduced.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.195-199
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• 2003

The $p-CdIn_2$$Te_4$single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_2$$Te_4$crystal and the various heat-treated crystals, the ($D^{\circ}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Cd, while the ($A^{\circ}$, X) emission completely disappeared in the $CdIn_2$T $e_4$:Cd. However, the ($A^{\circ}$, X) emission in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Te was the dominant intensity like an as-grown $CdIn_2$T $e_4$crystal. These results indicated that the ($D^{\circ}$, X) is associated with $V_{Te}$ acted as donor and that the ($A^{\circ}$, X) emission is related to $V_{cd}$ acted as acceptor, respectively. The $p-CdIn_2$T $e_4$crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of ( $D^{\circ}$, $A^{\circ}$) emission and its TO phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{cd}$ or T $e_{int}$. Also, the In in the $CdIn_2$X$CdIn_4$was confirmed not to form the native defects because it existed in the stable form of bonds.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.694-696
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• 2010

We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as $200{\mu}m$ in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.210.1-210.1
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• 2015

최근 산화물 반도체에 대한 연구가 활발하게 이루어지고 있다. 비정질 산화물 반도체인 In-Ga-Zn-O (IGZO)는 기존의 비정질 실리콘에 비해 공정 단가가 낮으며 넓은 밴드 갭으로 인한 투명성을 가지고 있고, 저온 공정이 가능하여 다양한 기판에 적용이 가능하다. 반도체의 공정 과정에서 열처리는 소자의 특성 개선을 위해 필요하다. 일반적인 열처리 방법으로 furnace 열처리 방식이 주로 이용된다. 그러나 furnace 열처리는 시간이 오래 걸리며 일반적으로 고온에서 이루어지기 때문에 최근 연구되고 있는 유리나 플라스틱, 종이 기판을 이용한 소자의 경우 기판이 손상을 받는 단점이 있다. 이러한 단점들을 극복하기 위하여 저온 공정인 마이크로웨이브를 이용한 열처리 방식이 제안되었다. 마이크로웨이브 열처리 기술은 소자에 에너지를 직접적으로 전달하기 때문에 기존의 다른 열처리 방식들과 비교하여 에너지 전달 효율이 높다. 또한 짧은 공정 시간으로 공정 단가를 절감하고 대량생산이 가능한 장점을 가지고 있으며, 저온의 열처리로 기판의 손상이 없기 때문에 기판의 종류에 국한되지 않은 공정이 가능할 수 있을 것으로 기대된다. 따라서 본 연구에서는 마이크로웨이브 열처리가 소자의 전기적 특성 개선에 미치는 영향을 확인하였다. 제작된 IGZO 박막트렌지스터는 p-type bulk silicon 위에 thermal SiO2 산화막이 100 nm 형성된 기판을 사용하였다. RCA 클리닝을 진행한 후 RF sputter를 사용하여 In-Ga-Zn-O (1:1:1)을 70 nm 증착하였다. 이후에 Photo-lithography 공정을 통하여 active 영역을 형성하였고, 전기적 특성 평가가 용이한 junctionless 트랜지스터 구조로 제작하였다. 후속 열처리 방식으로 마이크로웨이브 열처리를 1000 W에서 2분간 실시하였다. 그리고 기존 열처리 방식과의 비교를 위해 furnace를 이용하여 N2 가스 분위기에서 $600^{\circ}C$의 온도로 30분 동안 열처리를 실시하였다. 그 결과, 마이크로웨이브 열처리를 한 소자의 경우 기존의 furnace 열처리 소자와 비교하여 우수한 전기적 특성을 나타내는 것을 확인하였다. 따라서, 마이크로웨이브를 이용한 열처리 공정은 향후 저온 공정을 요구하는 소자 공정에 활용될 수 있을 것으로 기대된다.