• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.199-209
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• 1994

$PbTiO_3$ thin films were prepared on soda-lime-silica slide glasses, Si-wafer and sapphire substrate by the dip-coating of precursor solution. As starting materials, titanium tetra iso-propoxide and lead acetate trihydrate were used. Then acetylacetone was added to prepare stable sol. The effect of the parameters such as viscosity and composition of sol were investigated. The optical transmittance at visible range, refractive index, IR spectra were measured in varying compositions, thickness and heat treatment temperature. The crystallization of $PbTiO_3$ films were measured by using XRD and SEM. Diffusion of compositions from slide glass to thin film were investigated by using EDX, too. These sols not precipitated for 20 days. Transmittance of $PbTiO_3$ films at visible range were decreased with the increase of thickness and heat treatment temperatures, and were exhibited flat spectra. Pyrochlore type appeared in the films on slide glass and perovskite type appeared in the films on Si-wafer or sapphire at $600^{\circ}C$. Perovskite crystals transformed to $PbTi_3O_7$ phase at $800^{\circ}C$.

• Proceedings of the Membrane Society of Korea Conference
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• 1998.06a
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• pp.135-153
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• 1998

Nanofiltration (NF) is a recently introduced term in membrane separation. In 1988, Eriksson was one of the first authors using the word 'nanofiltration' explicitly. Some years before, FilmTech started to use this term for their NF50 membrane which was supposed to be a very loose reverse osmosis membrane or a very tight ultrafiltration membrane. Since then, this term has been introduced to indicate a specific boundary of membrane technology in between ultrafiltration and reverse osmosis. The application fields of the NF membranes are very broad as follows: Demeneralizing water, Cleaning up contaminated groundwater, Ultrapure water production, Treatment of effleunts containing heavy metals, Offshore oil platforms, Yeast production, Pulp and paper mills, Textile production, Electroless copper plating, Cheese whey production, Cyclodextrin production, Lactose production. The earliest NF membrane was made by Cadotte et al, using piperazine and trimesoyl chloride as monomers for the formation of polyamide active layer of the composite type membrane. They coated very thin interfacially potymerized polyamide on the surface of the microporous polysulfone supports. The NF membrane exhibited low rejections for monovalent anions (chloride) and high rejections for bivalent anions (sulphate). This membrane was called NS300. Some of the earliest NF membranes, like the NF40 membrane of FilmTech, the NTR7250 of Nitto-Denko and the UTC20 and UTC60 of Toray, are formed by a comparable synthesis route as the NS300 membrane. Commercially available NF membranes nowadays are as follows: ASP35 (Advanced Membrane Technology), MPF21; MPF32 (Kiryat Weizmann), UTC20; UTC60; UTC70; UTC90 (Toray), CTA-LP; TFCS (Fluid Systems), NF45; NF70 (FilmTec), BQ01; MX07; HG01; HG19; SX01; SX10 (Osmonics), 8040-LSY-PVDI (Hydranautics), NF CA30; NF PES 10 (Hoechst), WFN0505 (Stork Friesland). The typical ones among the commercially available NF membranes are polyamide composite membrane consisting of interfacially polymerized polyamide active layer and microporous support. While showing high water fluxes and high rejections of multivalent ions and small organic molecules, these membranes have relatively low chemical stability. These membranes have low chlorine tolerance and are unstable in acid or base solution. This chemical instability is appearing to be a big obstacle for their applications. To improve the chemical stability, we have tried, in this study, to prepare chemically stable NF membranes from PVA. The ionomers and interfacially polymerized polyamide were used for the modification of'the PVA membranes. For the detail study of the active layer, homogeneous NF membranes made only from active layer materials were prepared and for the high performance, composite type NF membranes were prepared by coating the active layer materials on microporous polysulfone supports.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.25-30
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• 2020

Oxide (SiO₂)/Metal(Ag)/Oxide(SiO₂, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO₂ (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10^-3 Ω^-1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.223-223
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• 2009

In this paper, designed and simulated Power Splitter (PS) integrated Mach-Zehnder interferometer (MZI) based planar type optical waveguide devices (which is called here a PS-MZI). The PS-MZI optical waveguide sensor was preceded by a Y-junction, which splits the input power between the sensor, and a reference branch, to minimize the effect of optical power variations. The PS-MZI optical waveguide sensor induced changing phases of the incident beam, which had fallen upon the waveguide through computer simulation, according to the small changes in the index of refraction, thus beam intensity was changed. The waveguide were optimized at a wavelength of 1550 nm and fabricated according to the design rule of 0.45 delta%, which is the difference of refractive index between the core and clad. The fabrication of PS-MZI optical waveguide sensor was performed by a conventional planar lightwave circuit (PLC) fabrication process. The PS-MZI optical waveguide that was fabricated to be applied as a biosensor revealed a low insertion loss and a low polarization-dependent loss. After having etched the over-clad at the sensor part in the MZI optical waveguide that was fabricated, Ti deposition was made on the adhesion layer, and then Au thin-film deposition was carried out thereon. In addition, its optical properties were measured by having changed the index of refraction oil at the sensing part of the MZI. To apply the planar type PS-MZI optical waveguide as a biosensor, a detection test for Staphylococcus aureus was conducted according to changes in concentration, having adopted Ti-alkoxide as ligand. The detection result of the S. aureus by the PS-MZI optical waveguide sensor was possible to the level of $10^1$ CFU/ml.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.788-792
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• 2010

The yttrium-barium-copper-oxide (YBCO) coated conductor, which supplement the fault of the existing superconducting current-limit materials YBCO thin film, bismuth-strontium-calcium-copper-oxide(BSCCO) wire and bulk, has been improved its mechanical weakness and has high index; hence, after quench YBCO coated conductor could limit the fault current effectively because of fast resistance occurrence speed. Furthermore, it has wide applicable area as an current limit material because it shows different resistance occurrence tendency by the thickness and kind of stabilization material sputtered on the superconducting layer. Therefore, many researchers are carrying out the study of application of YBCO coated conductor to superconducting fault current limiter (SFCL) for making high quality current limit element, based on resistance type. On the other hand, the study for other type except resistance type has been rarely conducted for the application of YBCO coated conductor to SFCL as an current limit element. Consequently, in this study, YBCO coated conductor with different stabilization layer Cu and Stainless steel, is applied to SFCL using iron core and coil, and examine the many index points as an current limit element, such as current limit characteristic, the tendency of resistance occurrence, response time, the temperature trend for stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.78-81
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method Ins a cutoff frequency of 0.9 GHz with a 0.01 dB ripple level. The coupled line type low-pass filter with stripline configuration was fabricated by using a high-temperature superconducting (HTS ; $YBa_2Cu_3O_{7-x}$) thin film on MgO(100) substrate. Since the HTS coupled line type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 62 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency Bemuse of good rejection of the spurious signals and harmonics, our low-pass filter is applicable to mobile base station systems such as cellular, personal communication systems and international mobile telecommunication(IMT)-2000 systems.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.73-82
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• 1989

We developed a photo-CVD equipment for the deposition of silicon based insulating materials. Silicon dioxide thin films were deposited at various process conditions especially low temperature range $50-250^{\circ}C$. Low pressure mercury lamp was used in the direct excitation of $SiH_4/N_2O$ mixture gas without mercury sensitization. AES and ESCA analysis showed that oxygen to silicon atomic ratio and binding state of Si-O bond was nearly 2.0 and $SiO_2$ type, respectively. The refractive indices were measured to be 1.39-1.44, indicating that films were in relatively low density.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.7-13
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• 1995

A new FET type semiconductor pressure sensor (PSFET : pressure sensitive field effect transistor) was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, $5000{\AA}$ thick, was deposited on a gate oxide of FET by RF magnetron sputtering. The deposition conditions to obtain a c-axis poling structure were substrate temperature of $300^{\circ}C$, RF power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET device showed good linearity and stability in the applied pressure range($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$).

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.