• Title/Summary/Keyword: thin-cathode

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Active-Matrix Cathodes though Integration of Amorphous Silicon Thin-Film Transistor with triode -and Diode-Type field Emitters

  • Song, Yoon-Ho;Cho, Young-Rae;Hwang, Chi-Sun;Kim, Bong-Chul;Ahn, Seong-Deok;Chung, Choong-Heui;Kim, Do-Hyung;Uhm, Hyun-Seok;Lee, Jin-Ho;Cho, Kyoung-Ik
    • Journal of Information Display
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    • v.2 no.3
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    • pp.72-77
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    • 2001
  • Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

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Improvement of the luminous efficiency of organic light emitting diode using LiF anode buffer layer

  • Park, Won-Hyeok;Kim, Gang-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.147-147
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    • 2015
  • The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

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Development of High-Performance LNMO Based Thin-Film Battery through Amorphous V2O5 Interlayer Insertion (비정질 V2O5 중간층 삽입을 통한 고성능 LNMO기반 박막 배터리 개발)

  • Kwon, Oh Hyuk;Kim, Jong Heon;Park, Jun Seob;Kim, Hyun-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.2
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    • pp.194-198
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    • 2022
  • All-solid-state thin-film battery can realize the integration of electronic circuits into small devices. However, a high voltage cathode material is required to compensate for the low energy density. Therefore, it is necessary to study all-solid-state thin-film battery based on the high voltage cathode material LNMO. Nevertheless, the electrochemical properties deteriorate due to the problem of the interface between LiNi0.5Mn1.5O4 (LNMO) and the solid electrolyte LiPON. In this study, to solve this problem, amorphous V2O5 was deposited as an interlayer between LNMO and LiPON. We confirmed the possibility of improving cycle performance of LNMO based thin-film battery. We expect that the results of this study can extend the battery lifespan of small devices using LNMO based all-solid-state thin-film battery.

Structure Evolution of Pt doped Amorphous ${V_2}{O_5}$Cathode Film for Thin Film Battery (박막 전지용 Pt 도핑 비정질 산화바나듐의 구조적 변화)

  • 김한기;전은정;옥영우;성태연;조원일;윤영수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.9
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    • pp.751-757
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    • 2000
  • The r.f. power effect for Pt doping is investigated on structural and electrochemical properties of amorphous vanadium oxide(V$_2$O$_{5}$) film, grown by direct current (d.c.) magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction(GXRD) and high-resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with 10W r.f. power induces more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt target increases. large amount of Pt atoms incorporates into the amorphous V$_2$O$_{5}$ film and makes $\alpha$-PtO$_2$microcrystalline phase in the amorphous V$_2$O$_{5}$ matrix. These results suggest that the semiconducting $\alpha$-PtO$_2$ microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibillity of the amorphous V$_2$O$_{5}$ cathode film battery. film battery.

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In-situ spectroscopic studies of SOFC cathode materials

  • Ju, Jong-Hun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.70.1-70.1
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    • 2012
  • In-situ X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy studies of SOFC cathode materials will be discussed in this presentation. The mixed conducting perovskites (ABO3) containing rare and alkaline earth metals on the A-site and a transition metal on the B-site are commonly used as cathodes for solid oxide fuel cells (SOFC). However, the details of the oxygen reduction reaction are still not clearly understood. The information about the type of adsorbed oxygen species and their concentration is important for a mechanistic understanding of the oxygen incorporation into these cathode materials. XPS has been widely used for the analysis of adsorbed species and surface structure. However, the conventional XPS experiments have the severe drawback to operate at room temperature and with the sample under ultrahigh vacuum (UHV) conditions, which is far from the relevant conditions of SOFC operation. The disadvantages of conventional XPS can be overcome to a large extent with a "high pressure" XPS setup installed at the BESSY II synchrotron. It allows sample depth profiling over 2 nm without sputtering by variation of the excitation energy, and most importantly measurements under a residual gas pressure in the mbar range. It is also well known that the catalytic activity for the oxygen reduction is very sensitive to their electrical conductivity and oxygen nonstoichiometry. Although the electrical conductivity of perovskite oxides has been intensively studied as a function of temperature or oxygen partial pressure (Po2), in-situ measurements of the conductivity of these materials in contact with the electrolyte as a SOFC configuration have little been reported. In order to measure the in-plane conductivity of an electrode film on the electrolyte, a substrate with high resistance is required for excluding the leakage current of the substrate. It is also hardly possible to measure the conductivity of cracked thin film by electrical methods. In this study, we report the electrical conductivity of perovskite $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ (LSC) thin films on yttria-stabilized zirconia (YSZ) electrolyte quantitatively obtained by in-situ IR spectroscopy. This method enables a reliable measurement of the electronic conductivity of the electrodes as part of the SOFC configuration regardless of leakage current to the substrate and cracks in the film.

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The Electrical Properties of Green OLED by Thickness of Al Layer (녹색 발광 OLED의 음극 두께 변화에 따른 전기적 특성)

  • Yang, Myung-Hak;Ki, Hyun-Chul;Kwak, Jae-Young;Min, Yong-Gi;Hong, Kyung-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.42-44
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    • 2008
  • In this study, we report an electrical properties of green OLEO, using the changed thickness of Al Layer. We investigated the electrical properties of OLEOs by IVL and optical properties by EL spectrum. The fundamental structure of green OLEOs was ITO anode/TPD($400{\AA}$)/$Alq_3(600{\AA})$)/LiF($10{\AA}$)/Al($200{\sim}600{\AA}$) cathode. The threshold voltage was low value according to the more thin Al layer. The luminance was increased by decreased cathode layer. The threshold voltage was 12V and wavelength was 530nm at $200{\AA}$ cathode.

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Study on metal-supported solid oxide fuel cells (신구조 금속지지체형 고체산화물 연료전지)

  • Lee, Chang-Bo;Bae, Joong-Myeon
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.129-132
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    • 2007
  • Advanced structure of metal-supported solid oxide fuel cells was devised to overcome sealing problem and mechanical instability in ceramic-supported solid oxide fuel cells. STS430 whose dimensions were 26mm diameter, 1mm thickness and 0.4mm channel width was used as metal support. Thin ceramic layer composed of anode(Ni/YSZ) and electrolyte(YSZ) was joined with STS430 metal support by using a cermet adhesive. $La_{0.8}Sr_{0.2}Co_{0.4}Mn_{0.6}O_{3}$ perovskite oxide was used as cathode material. It was noted that oxygen reduction reaction of cathode governed the overall cell performance from oxygen partial pressure dependance.

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SIMULATION OF THIN-FILM FIELD EMITTER TRIODE

  • Park, Kyung-Ho;Lee, Soon-Il;Koh, Ken-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.651-654
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    • 2002
  • We carried out 2-dimensional numerical calculations of electrostatic potential for triode field emitters with planar cathodes using the finite element method. As it turned out, the conventional triode structure with a planar cathode suffered from large gate current and wide spreading of emitted electrons. To circumvent these shortcomings, we proposed a new triode structure. By simply inserting a conducting layer of proper thickness on top of the cathode layer, we were able to modify the electric field distribution on the cathode surface so that low gate current and electron-focusing effect were achieved, simultaneously.

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