• Proceedings of the Acoustical Society of Korea Conference
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• 1994.06a
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• pp.824-829
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• 1994

High-frequency and complex vibration ultrasonic wire bonding systems are propsed and their welding characteristic are studied. Ultrasonic wire bonding is used widely for joining thin connecting wire of various electronic devices including IC or LSI. Conventional bonding systems use vibration frequency of 40 or 60 kHz and linear vibration welding tips. Complex vibration welding tip which vibrates in elliptical to circular or rectangular to square in the same or different frequency is effective to join welding specimens in shorter welding time and under smaller vibration amplitude, and furthermore high-frequency systems such as 90, 120, 190 kHz are also significantly effective. High-frequency and complex vibration welding system of 90, 120 and 190 kHz are designed. Welding characteristics of these systems are found very superior than a conventional system. Welding specimens of aluminum wire of 0.1mm diameter are successfully.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• The monthly packaging world
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• s.334
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• pp.86-89
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• 2021

• Proceedings of the KWS Conference
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• 2003.05a
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• pp.228-230
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• 2003

Recently, lots of joining methods of thin metal sheets are being developed in order to improve joint quality and productivity in manufacturing area. Current existing welding methods are continuously challenged as new materials and smaller thickness of metal sheets are required. In this study, laser plug brazing process was investigated as a new joining method of thin metal sheets. A CO2 laser system with automatic feeding of filler metal wire and flux was developed, and laser plug brazing experiments were conducted. The brazed joints were analyzed using various methods.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.57-63
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• 2003

Since new types of vehicles or structures made from thin aluminum alloy are under rapid development and some products are already on the market, welding of aluminium sheet is increasing. MIG(Metal Inert Gas), MIG-Pulse, TIG(Tungsten Inert Gas) welding are the typical Ai welding. MIG welding has the advantage of high speed, but it is difficult to apply to the thin plate, because of bum-through by the high heat input and spatter. MIG-Pulse welding can weld without spatter and burn-through, but when the gap exists at the welding joint, there is quite a possibility of bum-through. TIG welding is difficult to weld at a high speed. AC Pulse welding alternates between DCEP(Direct Current Electrode Positive) and DCEN(Direct Current Electrode Negative). DCEN is higher wire melting rate than DCEP, while lower temperature of droplet than DCEP. In AC Pulse welding, far fixed welding current, wire melting rate increases as the EN ratio increases. For fixed wire feed rate, welding current decreases as the EN ratio increases. Because of these features, the temperature of droplet, the depth of penetration, the width of bead decrease and the reinforcement height increases as EN ratio increases, and these are able to weld at a high speed, lower heat input. It is the purpose of this study that design of AC pulse current waveform for MIG welding of Al sheet and estimation of output characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.26 no.3
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• pp.344-349
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• 2017

In this study, we developed a process technology to fabricate RFID tag antennas using a one-sheet inlay micro-pattern forming process by press-molding RFID tag antennas on insulation sheet layers, such as polymer films, using ultrasonic longitudinal vibration. In addition, a fine pattern applicable for RFID tag antennas was manufactured using a $25{\mu}m$ thick thin-plate square wire; this is in contrast to the method that uses a conventional round wire. The developed ultrasonic indentation process can be used to fabricate fine pattern of the RFID antenna using one piece of equipment. The simplified manufacturing process technology has a shorter manufacturing time and is more economical. The developed RFID tag antenna forming technique involves pressing the $25{\mu}m$ square wire directly on the thin sheet insulation sheet of maximum thickness $200{\mu}m$, using a 60 kHz ultrasonic tool horn.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.641-646
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• 2016

Coil specimen was prepared by coating a copper wire with two varnish thin layers: the first was polyamideimide (PAI)/nanosilica (5 wt%) varnish and the second was anti-corona PAI/nanosilica (15 wt%) varnish. Insulation breakdown voltage was investigated under inverter surge condition at $20^{\circ}C$, $70^{\circ}C$, $100^{\circ}C$, $150^{\circ}C$, $200^{\circ}C$, $250^{\circ}C$, respectively. The insulation lifetime of the two layered coil was tens of times longer than that of original PAI coil. And the insulation lifetime decreased with increasing ambient temperature because there was weak binding strength between copper and varnish layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.369-372
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• 1997

Wire Ion Plasma Source (WIPS) is a plasma device which has a thin wire anode, a coaxially-set cylindrical cathode and electrodes located in both ends of the cylinder. The potential between the anode and cathode changes logarithmically by this electrode configuration. This electrode configuration enables high-density plasma to produce even at a low anode voltage. Since the electrode configuration is axially symmetric and long. plasma with axially uniform number density can be produced. Using particle-in-cell(PIC) and Monte Carlo collision(MCC), we investigate the traiectory of electrons and the characteristics of D.C. discharge in Wire ton Plasma Source.

• Journal of the Korean Wood Science and Technology
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• v.13 no.4
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• pp.67-72
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• 1985

To improve the bending strength of sawdustboard, verious resin contents of 10, 13, 16, and 19% were applied to the thin shell (face layer) composed with wire net or not. The shell effect of sawdust and wire net composition formed with core sawdustboard were evaluated. Forcusing on the effects of wire net composition and noncomposition including a comparison with chipboard and veneer complyboard, bending properties (Modulus of rupture (MOR), Modulus of elasticity (MOE), Stress at proportional limit ($S_{pl}$). Work to maximum load ($W_{ml}$))were analyzed and discussed. 1. In modulus of rutpute, veneer comply was the highest (621.5 kg/$cm^2$), and next decreasing order was wire net composition (159.1 kg/$cm^2$), chipboard (81.75 kg/$cm^2$), and wire net noncomposition (76.21 kg/$cm^2$) as in modulus of elasticity, work to maximum load, except for stress at proportional limit. 2. The highly significant effects were shown in both wire net composition and noncomposition, at the same time wire net composition exceeded two times of noncomposition throughout resin contents in bending properties. Chipboard was similar to the mean or 16% resin content in noncomposirion. 3. Every board in wire net composition above 10% resin content was beyond 100 kg/$cm^2$ in MOR, minimum allowable strength for structural use according to KS F 3104. In conclusion, the feasibility for improving the bending strength of weak sawdustboard by wire net composed shell was offered.