• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.461-463
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• 2009

We report on the fabrication of ZnO-based thin-film transistor (TFT) inverters with top and bottom gate structures with $Al_2O_3$ dielectrics grown by atomic layer deposition (ALD). Since the top gate ZnO-based TFT showed somewhat lower field effect mobility than that of the bottom gate device, our ZnO-based TFT inverters were designed with identical dimensions for both channels. This TFT inverter device demonstrated an high voltage gain at a low supply voltage of 5 V and clear dynamic behavior.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.138-142
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• 2010

Polystyrene thin films containing Bragg structures have been successfully obtained by the removal of DBR porous silicon films from the DBR structured porous silicon/polystyrene composite film in HF/$H_2O$ mixture solution and by replicating the nano-structures of porous silicon containing Bragg structure. Polystyrene thin films containing Bragg structures displayed unique optical reflection resonances in optical reflection spectrum. This optical reflection band was resulted from the interference of reflection wavelength at Bragg structure of polystyrene thin films. The wavelength of reflection resonances could be modified by the change of Bragg structure of the master. Polystyrene thin films containing Bragg structures were flexible and maintained their optical characteristics upon bending. The Polystyrene thin films replicate the photonic features and the nanostructure of the master.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.58-58
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• 2010

Carbon nanotubes (CNTs) have been extensively studied owing to its superior electrical properties, especially high electron mobility, which can be applied to various nano-electronic devices. However, synthesized CNTs have a mixture of metallic and semiconducting tubes so that their separation has been a tremendous obstacle to the practical application in electronic device structures. Among the different separation methods, electrical breakdown process to selectively burn out the metallic tubes has been quite successful though it needs additional process in the fabrication of device structures. Here, we report on the selective but not perfect growth of semiconducting nanotubes via use of diluted ferritin catalyst. SWCNTs were grown on ferritin catalyst, where the concentration of the ferritin solution was changed. In this way, we could fabricate the electrical breakdown free SWCNT thin film transistors on the flexible polyimide (PI) substrate. When we used the ferritin diluted by 1/2000, ~ 60 % of the SWCNT thin film transistors showed a perfect p-type behavior with an on/off current ratio higher than $10^5$ and on-current greater than $10^{-7}$ A. We will also discuss the photo-response of such formed thin film transistors over both visible and UV light.

• Structural Engineering and Mechanics
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• v.2 no.3
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• pp.269-284
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• 1994

The analysis and tests of thin-walled channel frames including nonlinear flexible or semi-rigid connection behaviour is presented. The semi-rigid connection behaviour is modelled using a mathematical approximation of the connection flexibility-moment relationship. Local instability such as local buckling and torsional flexural buckling of the member are included in the analysis. The full response of the frame, up to the collapse load, can be predicted. Experimental investigation was carried out on a series of simple double storey symmetrical frames with the purpose of verifying the accuracy and validity of the analysis. Agreement between the theoretical and experimental results is acceptable. The investigation also shows that connection flexibility and local instability such as local buckling and torsional flexural buckling can affect the behaviour and strength of thin-walled frames significantly. The results can also provide further insight into the advanced study of practical structures where interaction between flexible connections and phenomenon associated with thin-walled members are present.

• 한국전산유체공학회:학술대회논문집
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• 2006.05a
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• pp.219-222
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• 2006

• Laser Solutions
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• v.17 no.1
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• pp.13-16
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• 2014

Indium Tin Oxide (ITO) has been used widely for transparent conducting thin films. In this work, the feasibility of a laser sintering process to fabricate ITO thin films on flexible substrates is examined. Nanoparticles of ~10 nm were spin coated on a Si wafer and then sintered by a KrF excimer laser. The sintered structure was characterized by scanning electron microscopy. Polycrystalline structures were fabricated by the process without thermally damaging the substrate. The electrical resistivity of the film was reduced to ~ 1/1000 of the initial value. This work demonstrates that nanosecond laser sintering of ITO particles can be a useful tool to fabricate ITO films on various flexible substrates.

• Journal of Korean Tunnelling and Underground Space Association
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• v.17 no.6
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• pp.695-702
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• 2015

Recently, the improvement of mechanical and theoretical issues in geo-centrifuge test enhances the applicability and accuracy of the test. Geo-centrifuge test is appropriate to simulate the behaviors of underground structures like tunnel, since tunnel interacts with the soil and/or rock around it and the test can embody the in-situ stress conditions effectively. In this study, the seismic behaviors of twin tunnel were analyzed based on geo-centrifuge test. Flexible segment to mitigate seismic acceleration were implemented in the model with thin and thick thickness. Based on the test results, it was found that flexible segment can decrease the peak acceleration generally, however, thin flexible segment was not able to reduce peak acceleration in short-period seismic wave. Thick flexible segment was more effective in case of high bedrock acceleration condition. Additionally, 3-dimensional numerical analysis was performed to verify the characteristics of seismic behavior and the effect of flexible segment. Consequently, the numerical analysis result showed good agreement with the test result.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.322-325
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• 2009

Amorphous oxide semiconductors (AOSs) are expected as new channel materials in TFTs for largearea and/or flexible FPDs, and several prototype displays have been demonstrated in these five years since the first report of AOS TFT. In this paper, we review fundamental materials science of AOSs that have been clarified to date in connection with operation characteristics of AOS TFTs.

• Structural Engineering and Mechanics
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• v.42 no.3
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• pp.409-424
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• 2012

Since relatively low elasticity modulus of the FRP materials results in lower natural frequencies, it is necessary to study the free vibration of FRP transmission poles. In this paper, the free vibration of tapered FRP transmission poles with thin-walled circular cross-section is investigated by a tapered beam element. To model the flexible joints of the modular poles, a rotational spring model is used. Modal analysis is performed for typical FRP poles with/without joint and they are also modeled by ANSYS commercial finite element software. There is a good correlation between the results of the tapered beam finite element model and those obtained from ANSYS as well as the existing experimental results. The effects of different geometries, material lay-ups, concentrated masses at the pole tip, and joint flexibilities are evaluated. Moreover, it is concluded that using tougher fibres at the inner and outer layers of the cross-section, results in higher natural frequencies, significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.