• Korean Journal of Materials Research
• /
• v.23 no.12
• /
• pp.714-721
• /
• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.2
• /
• pp.367-373
• /
• 2007

The present study investigates numerically nonequilibrium energy transfer between electrons and phonons in metal thin films irradiated by ultrashort pulse lasers and it also provides the temporal and spatial variations of electron and phonon temperatures using the well-established two-temperature model(TTM) on the basis of the Boltzmann transport equation(BTE). This article predicts the crater shapes in gold film structures, and compares the results by using two-dimensional energy transport equation. From the results, it is found that nonequilibrium energy transfer between electrons and phonons takes place, and the equilibrium time increases with the increase of laser fluence. On the other hand, above threshold fluence the ablation time doesn't change nearly with increasing fluences. Compared with one-dimensional TTM, it also reveals that the temporal distributions of electron and phonon temperatures at the top surface estimated by using two-dimensional TTM have a similar tendency. The results show that two-dimensional TTM can simulate the crater shape of metals during the irradiation of femtosecond pulse lasers and the absorbed energy is propagated to z-direction faster than to r-direction.

• Tribology and Lubricants
• /
• v.33 no.3
• /
• pp.119-125
• /
• 2017

In this study, we perform a numerical analysis to predict the film thickness and lubrication regions for a thrust ball bearing under different operating conditions. Film thinning and replenishment affect the film thickness in starved lubrication. As the inlet meniscus position is brought to the edge of the Hertz contact, the thin film thickness is calculated as starved equation. We use a film replenishment model to determine the recovery film thickness between rolling elements. We use a hydrodynamic model to describe film recovery, that results from the effects of surface tension. In this model, we consider the surface tension gradient in fluid depression as the driving force for fluid recovery. We use Fourier transform method to determine the time-dependent depth of depressed oil. We calculate the change in the central film thickness graphically by using the recovery equation in starved elastohydrodynamic lubrication(EHL) under operating conditions that include numbers of balls, sliding velocity, applied force, and ambient film thickness. We evaluate the degree of starvation by using the distance from the center of the contact area to the meniscus position. Parched lubrication, a phenomenon where the film thickness decreases consistently, occurs at the severe condition. We determine optimal values with respect to the numbers of balls, and sliding velocity. The investigation can contribute to the design operating conditions for proper lubrication.

• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.2453-2458
• /
• 2007

The performance of polysilicon thin film transistor (p-Si TFT) has an important role in the operation of active matrix liquid crystal displays. To fabricate the p-Si TFTs that have uniform characteristics, understanding of the recrystallization mechanism of silicon is crucial. Especially, the analysis of the transient temperature variation and the liquid-solid interface motion is required to find the mechanism. The thermal conductivity is one of the most important parameters to understand the mechanism. In this work, a KrF eximer laser beam was irradiated to amorphous silicon thin films. We measured the transient reflectivity at the wavelength of 633 nm. We carried out the numerical simulation of one dimension conduction equation so that we determined the most well-fitted thermal conductivity by comparing the numerically obtained transient reflectivity with the experimentally measured one. The experimentally determined thermal conductivity of amorphous silicon thin films is 1.5 W/mK.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.211-220
• /
• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.19 no.10
• /
• pp.1849-1860
• /
• 1994

Domain wall dynamics in thin film of amorphous Rare Earth-Transistion Metal alloys were investigated using numerical integration of the Landau-Lifshitz-Gilbert equation. The thin film was divided into a two-dimensional square lattice ($30\times30$) of dipoles. Nearest-neighbor exchange interaction magnetic anisotropy, applied magnetic field, and demagnetiing field of interacting anisotropy, applied magnetic field, and demagnetizing field of interacting dipoles were considered. It was assumed that the film had perfect uniaxial anisotropy in the perpendicular direction and the magnetization reversal existed in the film. The time of domain wall creation and the thickness of the wall were investigated. Also the motion of domain walls under an applied field was considered. Simulation results showed that the time of domain wall creation was decreased significantly and the average velocity of domain wall was increased somewhat when the demagnetizing field was considered.

• Polymer(Korea)
• /
• v.36 no.4
• /
• pp.507-512
• /
• 2012

Thin (~650 nm) and ultrathin (~50 nm) films of neat PMMA and PMMA containing 5 wt% of methacryl-polyhedral oligomeric silsesquioxane were prepared in this work. The effects of film thickness and POSS on glass transition temperature ($T_g$) and isothermal physical aging were investigated by means of differential scanning calorimetry (DSC). $T_g$ depression was observed as film thickness was decreased and Ma-POSS molecules were incorporated. Enthalpy relaxation (${\Delta}H_{Relax}$) due to the isothermal physical aging was reduced by ultra-thin film thickness and the addition of Ma-POSS. KWW (Kohlrausch-Williams-Watts) equation was used to fit ${\Delta}H_{Relax}$ vs. aging time data providing the fitting parameters; maximum enthalpy recovery (${\Delta}H_{\infty}$), relaxation time (${\tau}$) and non-exponentiality parameter (${\beta}$).

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1473-1474
• /
• 2011

박막트랜지스터(Thin Film Transistor: TFT)의 게이트 절연층 에서는 박막의 전계강도, 고유전율 및 우수한 표면 특성이 요구된다. HD-PECVD(High Density - Plasma Enhanced Chemical Vapor Deposition)를 이용하여 $NH_3$ 유량 및 기판 온도를 변화시키면서 SiN 박막을 제작하고, 표면특성을 AFM 으로, CONTACT ANGLE로 접촉각을 측정하여 Young's Equation 으로 Surface Energy를 계산하였고 전기적 특성은 MIM 구조를 제작하고 C-V 측정을 하여 조사하였다.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2001.02a
• /
• pp.92-94
• /
• 2001

We investigated quench recovery characteristics of Au/YBCO thin film meander lines. YB$a_{2}$$Cu_{3}$ $O_{7}$films were coated in-situ with a gold layer and patterned into 2 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents at various source voltages. Resistance decreased first slowly and then rapidly to zero. Resistance vs. time curves for different source voltages fell on top of each other when translated horizontally. The slowly varying portion of data fell on straight lines of a slope on a semi-log scale at all source voltages. A heat balance equation reflecting heat loss from meander lines to surroundings explains these results quantitatively.

• Journal of the Korean Society for Heat Treatment
• /
• v.5 no.2
• /
• pp.95-102
• /
• 1992

In this study, we tried to describe the quantitative model of TiN film structure which was deposited by PECVD process. The macro-grain growth behavior was studied at the various deposition pressures and times. As a result, It was confirmed that TiN films had the typical Zone 1 structure, and macro-columnar grains were, without reference to the deposition pressure, grown ballistic type by the growth-death competition following the equation, $Y=aX^2$, approximately obtained by regression analysis. Also, the thickness and the crystallization of TiN thin films were increased, the chlorine contents were decreased according to the decreasing of deposition pressure.