• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.51-55
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• 2009

We investigated that electrical and optical the properties of IZO thin film for OLED anode application. The IZO thin film was the deposited on the glass substrate by facing targets system as a function of substrate temperature. As a result, the electrical and optical property of IZO thin film prepared with $150^{\circ}C$ was most excellent. To confirm the suitability of the IZO thin film for OLED anode, we evaluated the performance of OLED with IZO/TPD/Alq3/LiF/Al fabricated on IZO anode. Also, the performance of OLED fabricated on IZO anode showed the most excellent at $150^{\circ}C$ substrate temperature.

• 한국재료학회지
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• 제26권12호
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• pp.714-720
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• 2016

We performed this study to understand the effect of a single-crystalline anode on the mechanical properties of as-deposited films during electrochemical deposition. We used a (111) single- crystalline Cu plate as an anode, and Si substrates with Cr/Au conductive seed layers were prepared for the cathode. Electrodeposition was performed with a standard 3-electrode system in copper sulfate electrolyte. Interestingly, the grain boundaries of the as-deposited Cu thin films using single-crystalline Cu anode were not distinct; this is in contrast to the easily recognizable grain boundaries of the Cu thin films that were formed using a poly-crystalline Cu anode. Tensile testing was performed to obtain the mechanical properties of the Cu thin films. Ultimate tensile strength and elongation to failure of the Cu thin films fabricated using the (111) single-crystalline Cu anode were found to have increased by approximately 52 % and 37 %, respectively, compared with those values of the Cu thin films fabricated using apoly-crystalline Cu anode. We applied ultrasonic irradiation during electrodeposition to disturb the uniform stream; we then observed no single-crystalline anode effect. Consequently, it is presumed that the single-crystalline Cu anode can induce a directional/uniform stream of ions in the electrolyte that can create films with smeared grain boundaries, which boundaries strongly affect the mechanical properties of the electrodeposited Cu films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• 한국수소및신에너지학회논문집
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• 제22권5호
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• pp.599-608
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• 2011

The Ni-Al anodes of the molten carbonate fuel cell (MCFC) with three different structures were successfully fabricated in order to reduce the thickness of the anode down to 0.3 mm; one was the non-supported anode made by a conventional tape casting method, and others were the supported anodes made by lamination or direct casting on the nickel screen. It was seen from the physical analyses and cell operation that the supported thin anodes made by direct casting showed good mechanical strength and cell performance because of a good contact between the anode materials and the support. The single cell using the above anode showed the cell voltage of 0.858 V at the current density of 150$mA/cm^2$ with the nitrogen cross-over of only 0.6% at the operation time of 1,000 h, which was similar to the performance of the conventional thick (0.7 mm) anode. The ability to utilize a thin configuration of anode should cut down the amount of nickel alloy and consequently reduce its manufacturing cost.

• 한국진공학회지
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• 제9권1호
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• pp.36-41
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• 2000

$SnO-2$ thin films for thin film secondary battery anode were deposited n glass substrate with stain-less steel collector and charge/discharge experiments were conducted to investigate feasibility of $SnO-2$ thin film as a new anode material. The as-deposited films were pure $SnO-2$ phase which is not related to deposition condition. The grain size on the surface of as-deposited films increased with increase of oxygen partial pressure. However, the grain size did not show any change above oxygen partial pressure of 80:20. The surface roughness of the as-deposited films increased after decreasing because of resputtering effect of oxygen negative ion in plasma. All films showed typical $SnO-2$ anode characteristics which has a side effect at the first cycle, which is not related to the deposition condition. The charge/discharge experiments of 200cycles indicated that capacity of $SnO-2$ films depended on oxygen contents and surface roughness. The cycle characteristics was determined by initial charge/discharge reaction. The $SnO-2$ film with low initial capacity showed more stable cycle characteristics than film with high initial capacity.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.49-54
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• 2020

The voltage drop due to the thin cathode film at the large size top emission OLED panel was successfully compensated with making electrical contact between thin cathode and anode auxiliary electrode by 355nm wavelength of laser. It was found that the luminance uniformity dramatically increased from around 15% to more than 80% through this electrical compensation between thin cathode and anode auxiliary electrode. Moreover, the removing process for EL materials on the anode auxiliary electrode process by laser was very reliable and stable. Therefore, it is thought that the EL removal method using laser to make electrical contacts is very appropriate to mass production for such a large size top emission OLEDs to obtain high uniformity of luminance.

• 한국세라믹학회지
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• 제44권10호
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• pp.589-595
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• 2007

Physical properties of sputtered YSZ thin film electrolytes on anode thin film by spray pyrolisis has been investigated to realize the porous electrode and dense electrolyte multilayer structure for micro solid oxide fuel cells. It is shown that for better crystallinity and density, YSZ need to be deposited at an elevated temperature. However, if pure NiO anode was used for high temperature deposition, massive defects such as spalling and delamination were induced due to high thermal expansion mismatch. By changing anode to NiOCGO composite, defects were significantly reduced even at high deposition temperature. Further research on realization of full cells by processing hybridization and cell performance characterization will be performed in near future.