• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.469-473
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• 2017

We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.24-27
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.881-892
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• 1995

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.85-90
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• 2006

In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential $3\omega$ method. Also, verification of differential $3\omega$ method has been accomplished with various proposed criteria. The target film for the measurement is 300 nm thick silicon dioxide which is covered with upper protective layer of various thicknesses. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. Since the verification of differential $3\omega$ method has not been conducted yet, we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential $3\omega$ method is verified to be reliable as long as the proposed preconditions of the samples are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between thickness of the upper protective layer and width of the heater line due to heat spreading effect.

• Proceedings of the Korea Society of Poultry Science Conference
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• 2004.11a
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• pp.53-68
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• 2004

Eggshell quality is one of the most important factors that influence hatchability. The porosity and overall quality of eggshell have a very significant effect on exchange of vital gas (carbon dioxide and oxygen) between the developing embryo and the air during incubation. Thin-shelled eggs showed the greater weight loss than do thick-shelled eggs. causing the chick to have difficulty in hatching. Thin-shelled eggs also have a much greater chance of being cracked during handling. On the other hand. thick-shelled eggs showed the higher hatchability as a result of greater fertility and lower intermediate and late embryonic mortalities. Even a small percentage improvement in the eggshell quality could result in significant saving to the breeder industry in an increasingly competitive environment. Many factors including nutrition. management practices, environmental conditions and breeding are known to be related to eggshell quality. In this review brief accounts of each factor associated with eggshell quality and hatchability were provided. We conducted three experiments to investigate the effects of dietary Ca. vitamin D3 metabolite and some bioactive materials on eggshell quality and hatching egg production. The results of our studies showed that relatively high levels of dietary Ca in combination with 25-hydroxycholecalciferol had beneficial effects on improving eggshell quality and reproductive performances in aged egg-type breeder hens. It was also suggested that the proper use of some feed additives such as isoflavon and chitosan might provide means of improving eggshell quality and reproductive performances in aged egg-type breeder hens.

• Structural Engineering and Mechanics
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• v.36 no.5
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• pp.625-642
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• 2010

The Integrated Force Method (IFM) is a novel matrix formulation developed for analyzing the civil, mechanical and aerospace engineering structures. In this method all independent/internal forces are treated as unknown variables which are calculated by simultaneously imposing equations of equilibrium and compatibility conditions. This paper presents a new 12-node serendipity quadrilateral plate bending element MQP12 for the analysis of thin and thick plate problems using IFM. The Mindlin-Reissner plate theory has been employed in the formulation which accounts the effect of shear deformation. The performance of this new element with respect to accuracy and convergence is studied by analyzing many standard benchmark plate bending problems. The results of the new element MQP12 are compared with those of displacement-based 12-node plate bending elements available in the literature. The results are also compared with exact solutions. The new element MQP12 is free from shear locking and performs excellent for both thin and moderately thick plate bending situations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.35-39
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• 2008

In this study, electromechanical properties of carbon nanotube (CNT) thin film on flexible substrates were measured using a micro-tensile machine with functionality of simultaneous measurements of displacement, load and electrical resistance. The CNT thin film of about 100 nm thick was deposited on flexible substrates, polyethylene terephthalate (PET) using spraying and ink-jetting techniques. To investigate the effect of process condition on the electromechanical properties of CNT thin film, sets of CNT samples were fabricated under various heat treatments and microwave process. The microstructures of the CNT thin film before and after tensile test were investigated using Scanning Electron Microscope (SEM), and the failure modes of the CNT thin films were identified to understand their electromechanical behaviors and interaction with the flexible substrates. Based on the experimental results, the use of CNT thin film as flexible electrodes and strain gages is discussed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.6
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• pp.893-901
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• 2002

Effect of boundary layer thickness on the flow characteristics around a rectangular prism has been investigated by using a PIV(Particle Image Velocimetry) technique. Three different boundary layers(thick, medium and thin)were generated in the Atmospheric Boundary Layer Wind Tunnel at Pusan National University. The thick boundary layer having 670 mm thickness was generated by using spires and roughness elements. The medium thickness of boundary layer($\delta$=270 mm) was the natural turbulent boundary layer at the test section floor with fairly long developing length(18 m). The thin boundary layer($\delta$=36.5 mm) was generated on the smooth panel elevated 70cm from the wind tunnel floor. The Reynolds number based on the free stream velocity(3 ㎧) and the height of the model(40 mm) was 7.9$\times$10$^3$. The mean velocity vector fields and turbulent kinetic energy distributions were measured and compared. The effect of boundary layer thickness was clearly observed not only in the length of separation bubble but also in the location of reattachment point. The thinner the boundary layer thickness, the higher the turbulent kinetic energy Peak around the model roofbecame. It is strongly recommended that the height ratio between the model and the approaching boundary layer thickness should be encountered as a major parameter.