• Applied Microscopy
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• v.45 no.4
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• pp.189-194
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• 2015

Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).

• Architectural research
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• v.16 no.3
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• pp.121-129
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• 2014

A plate element is developed by using isogeometric approach in order to determine natural frequencies of laminated composite plates. Reissner-Mindlin (RM) assumptions is adopted to consider the shear deformation and rotatory inertia effect. All terms required in isogeometric element formulation are consistently derived by using Non-uniform rational B-spline surface (NURBS) definition. Gauss quadrature rule is used to form the element stiffness matrix and separately Lobatto quadrature rule is used to calculate element mass matrix. The capability of the present plate element is demonstrated by using numerical examples. From numerical tests, the present isogeometric element produces reliable numerical results for both thin and thick plate situations.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.65-71
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• 2011

Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.5
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• pp.150-156
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• 1997

Three dimensional finite element analysis was conducted to estimate the effect of shape parameters (plate width and thickness) on the stress intensity factor for crack in the integrally stiffened plate. Analysis was done for width ratios of 0.5, 0.75, 1.0, 1.5, 2.0, 2.5, and thickness ratios of 2, 3, 4, 6. Based on these results, an empirical equation of geometry factor is formulated as a function of crack length and thickness ratio.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.6 s.171
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• pp.159-167
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• 2005

This work focuses on the effects of crack free friction on Mode II stress intensity factors, $K_{II}$, for a vertical surface crack in a two-dimensional finite element model of TiN/steel subject to rolling contact. Results indicate that maximum $K_{II}$ values, which occur when the load is adjacent to the crack, may be significantly reduced in the presence of crack face friction. The reduction is more significant for thick coatings than for thin. Crack extension and increased layer thickness result in increased $K_{II}$ values. The effect of crack face friction on compressive $K_I$ values appears negligible. Comparative results are presented for $MoS_2/steel$ and diamond-like carbon(DLC)/Ti systems.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.2
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• pp.156-163
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• 2001

The experiment is conducted on the rapidly rotating incompressible flow within a confined cylinder using LDV(Laser Doppler Velocimetry). The configurations of interest are the flows between a rotating upper disk with a bar and a stationary lower disk enclosed within a cylinder. The flow is considered to be an axisymmetric undisturbed basic flow. The results show that the flow is strongly dependent on the radius and the shape of bar but is negligibly affected by the Reynolds number in turbulent flow. It is observed that in the lid-driven case the main forms near the wall as the Reynolds number increases. The thin bar causes the second axial flow due to the suction effect and the thick bar causes the main flow to be pulled toward the surface of the bar. The step bar shows the dual effect of the two. 1:2 tilt bar shows that the main flow distributes wider than the other cases in which interference occurs due step bar.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.560-567
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• 2002

Titanium (Ti) is a bioinert material and has lower elastic coefficient and better strength/volume property than other metals. Ferroelectric materials show alignment of positive and negative charges by poling treatment. This study was purposed to develop a new implant system by combining the advantages of Ti and ferroelectric property of $BaTiO_3$ (BTO). It was performed with the assumption that the $Ca^{2+ }$ ions would be easily attracted on negatively charged surface and the attracted cation might behave as nuclei for bone-like crystal growth in biological solutions. A ferroelectric BTO thin film on Ti was fabricated and the effect of poling treatment on the improvement of calcium phosphate (Ca-P) formation in biological solutions was evaluated. After immersion in Eagle’s minimum essential media (MEM) solution, NaCl was formed on Ti, and Ca-P layer containing NaCl was formed on Ti-O. Weak and sparse Ca-P layers were formed on BTO, while thick, homogeneous, and dense Ca-P layer was formed on negatively polarized BTO (N-BTO), which was confirmed by FE-SEM and EDX. In summary, these results demonstrate that poling the ferroelectric BTO surface negatively is effective for the formation of Ca-P layer in MEM solution, and that N-BTO coating on Ti could be used as a possible alternative method for enhancing the osseointegration of the implants.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.887-892
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• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.269-275
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• 2005

Ni/Ni-aluminide/Ti/Ti-aluminide laminate composite, considered as a functionally gradient material, was manufactured by thin foil hot press technique. Thick intermetallic layers of NiAl and $TiAl_3$ were formed by a self-propagating high-temperature synthesis (SHS) reaction, and thin continuous taters of $Ni_3Al$ and TiAl were formed by a solid-state diffusion. Fracture resistance with loading along the crack arrester direction is higher than crack divider direction due to the interruption of crack growth in metal layers. The $Ni_3Al$ and NiAl intermetallic layer showed cleavage and intergranular fracture behavior, respectively, while the fracture mode of $TiAl_3$ layer was found to be an intragranular cleavage. The debonding between metal and intermetallic layer and the pores were observed in the Ni/Ni-aluminide layers, resulting in the lower fracture resistance. With the results of acoustic emission (AE) source characterization the real time of failure and the effect of AE to crack growth could be monitored.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.