• 전자공학회논문지 IE
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• 제44권1호
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• pp.6-9
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• 2007

본 연구는 마이크로 스펙트로미터 적외선 센서용으로 thermopile 소자 구조를 이용하여 설계, 제작되어 특성을 평가하였다. MEMS 공정기술을 이용하여 열적 고립 구조를 갖는 Low-stress SiNx 멤브레인상에서 마이크로 thermopile 적외선 센서를 제작하고 특성을 평가하였다. 마이크로 thermopile 적외선 센서를 측정한 결과 열전대 길이, 개수, 멤브레인 넓이에 기전력이 비례하여 출력되고 열전대 물질의 선폭에는 반비례하는 것으로 나타났다. 5가지 요소를 독립적으로 변화시켜 측정한 결과 마이크로 thermopile 적외선 센서는 멤브레인 넓이가 다른 요소에 비해 더 큰 영향을 미쳤다. 이러한 결과로 미루어 본 연구에서 제작된 마이크로 thermopile 적외선 센서는 마이크로 스펙트로미터용 적외선 센서로서 활용이 가능할 것으로 생각되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.265-266
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• 2006

It was well known that thermopile was quiet a competent sensor using to probe the temperature of "hot point" where the temperature can be off the temperature-limitation for normal operation of the main electrical power equipment. In the present work, we aimed for developing new Ge-thermopile materials which can be using a non-contact temperature sensors at various hot-point of the power equipment and evaluation of its output property. As a results of the present works, a new thermopile which were composed Ga-poded p-type and Sb-doped n-type in Ge-semiconductor were designed and manufactured by MBE(Molecular Beam Epitaxy) process and showed superior sensitivity at room temperature.

• 센서학회지
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• 제11권1호
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• pp.1-8
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• 2002

온도 측정이 필요한 다양한 용도의 소자에 응용되고 있는 열전쌍열(thermopile) 제작에 SOI 구조를 응용하여, 특성을 개선하였다. 열전쌍열을 구성하는 저항체가 단결정 실리콘으로, 제벡 계수(seebeck coefficient)가 높은 재료일 뿐 아니라, 실리콘 저항체를 산화막을 이용하여 실리콘 기판과 절연 분리한 구조로 되어있어서, 기존의 이온주입 공정에 의해 불순물을 주입하는 방법으로 제작된 저항체에 비해서 두 접점(hot junction 및 cold junction) 사이의 열 전달을 극적으로 감소시킬 수 있어서 소자의 특성을 개선할 수 있었다. 열전쌍열은 p형 단결정 실리콘 저항체 17개 및 n형 17개를 직렬 연결로 구성했다. 저항체의 길이 $1600{\mu}m$, 폭 $40{\mu}m$, 두께 $1{\mu}m$으로 제작된 열전쌍열에 빛을 조사하여 소자 양단에 온도차를 발생시키고, 그 때 발생하는 기전력을 측정한 결과 130mV/K의 우수한 특성을 나타냈다.

• 대한전자공학회논문지
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• 제9권5호
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• pp.1-5
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• 1972

원자로제어를 위한 중성자열전대의 응답시간 단축을 목적으로 진실증착된 박막열전대를 이체하여 중성자열전대를 시작하였다. 이의 실험결과를 선열전대의 것과 비교하였으며, 열중성자속범위 neutrons/㎠/sec에서 좋은 선형특성을 가지고 있었다. 시작된 박막중성자숙전대를 사용하여 TRIGA MARK-II 원자로 노심에서의 열중성자속분포를 측정하였다.

• 센서학회지
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• 제22권5호
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• pp.369-373
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• 2013

In this paper, we developed contact type temperature sensor with single crystal silicon strip thermopile. This sensor consists of 15 p-type single crystal silicon strips, 17 n-types and contact electrodes on silicon dioxide silicon membrane. The result of electromotive force measuring showed very good characteristic as $15.18mV/^{\circ}C$ when temperature difference between the two ends of the thermopile occurs by applying thermal contact on the thermopile which was fabricated with silicon strip of $200{\mu}m$ length, $20{\mu}m$ width, $1{\mu}m$ thickness.

• 센서학회지
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• 제11권5호
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• pp.294-300
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• 2002

In this study, we fabricated thermopile infrared sensor with floating membrane structure. Floating membrane was formed by SOI(Silicon On Insulator) structure. In SOI structure, silicon dioxide layer between top silicon layer and bottom silicon substrate was etched by HF solution, then membrane was floated over substrate. After membrane was floated, thermopile pattern was formed on membrane. By insertion of SOI technology, we could obtain thermal isolation structure easily and passivation process for sensor pattern protection was not required during fabrication process. Then, the amplifier circuit for thermopile sensor was fabricated by using $1.5{\mu}m$ CMOS process. The voltage gain of fabricated amplifier was about two hundred.

• 전자공학회논문지A
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• 제31A권4호
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• pp.70-76
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• 1994

A humidity sensing device based on a new humidity sensing principle is designed and fabricated in this study. The silicon thermopile is consisted of 25 couples of p-type diffused layer/Al strips. The internal resistance and the Seebeck coefficient are 300kl and 537$\mu$V/K, respectively Fabricated sensors showed linear response characteristics proportional to relative humidity changes with a sensitivity of 9$\mu$V/%RH in the range from 20% to 90%.

• 한국시뮬레이션학회:학술대회논문집
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• 한국시뮬레이션학회 2001년도 The Seoul International Simulation Conference
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• pp.387-390
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• 2001

Thermopile thermometer can measure the temperature of an object without attaching the object. It measures the temperature by receiving the radiation energy from objects. The idea of this is from the law of Stefan-Boltzmann. In the past it was not used well because the size was big and the cost was too expensive. But, In these days it can be used many field because the size become smaller and advantage of cost by using micro machine technology. However, The accuracy of measuring is not better than electric type. So we want to improve the accuracy of sensor by analyzing the heat transfer of the thermopile. To analyze temperature distribution in the thermopile sensor, we use the FEM software which is named ANSYS. The conduction and radiation heat transfer is considered to simulate the temperature distribution and time response inside of the sensor.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.781-784
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• 2005

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress $Si_3N_4$ membranes with $1.2{\mu}m-thickness$ using MEMS technology. Poly-Si thin film with thickness of 3500 ${\AA}$ as the first thermocouple material, was deposited by LPCVD method. And aluminum thin film with thickness of 6000 ${\AA}$ as the second thermocouple material, was deposited by sputtering method. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers (16 ${\sim}$ 48), thermocouple line widths (10 ${\mu}m$ ${\sim}$ 25 ${\mu}m$), thermocouple lengths (100 ${\mu}m$ ${\sim}$ 500 ${\mu}m$), membrane areas ($1^2\;mm^2$ ${\sim}$ $2.5^2\;mm^2$) and junction areas (150 ${\mu}m^2$ ${\sim}$ 750 ${\mu}m^2$), respectively. Electromotive forces of fabricated thermopile were measured 1.1 mV ${\sim}$ 7.4 mV at $400^{\circ}C$. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.627-628
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• 2013