• Title/Summary/Keyword: thermoelectric effects

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An analytical model considering temperature effects in self-signal processing infrared detectors (자기신호처리 적외선 감지소자의 온도효과를 고려한 해석적 모델)

  • 조병섭;곽계달
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.3
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    • pp.124-133
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    • 1995
  • A theoretical self-consistent thermoelectric model has been developed for optimal thermal design in the self-signal processing infraed detectors. The model is achived by employing the coupled thermoelectric equation which allows which allows the simultaneous investigation of the termal and electrical aspects of device behavior. The thermal limitation of detectivity and responsivity are determined by the enegy gap, carrier concentration, lifetime, and mobility as a function of the temperature. The calculated results indicate that the detectivity is decreased at bias fields above about 50 V/cm, because the performence is limiting by temperature when the bias voltage reached the level associated with Joule heating. It has been also found that the improvement in the mid-band modulation transfer function(MTF) may be restricted by increasing the bias fields. Further, the important paramerers in the thermal optimization of SPIR detector, such as temperature in the device, ambipolar velocity, element thickness and length, are also considered. The analytical study provides a mathematical basis for optimal design of such a photoconductive IR detector and the agreement between the experimental and theoretical results are seen to be good.

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Preparation of Bismuth Telluride Thin Films using RF magnetron sputtering and Study on Their Thermoelectric Properties (RF 마그네트론 스퍼터링을 이용한 Bismuth Telluride 박막의 제조와 그 열전 특성 연구)

  • Kim, Dong-Ho;Lee, Gun-Hwan
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.215-221
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    • 2005
  • Thermoelectric bismuth telluride thin films were prepared on $SiO_{2}$/Si substrate with co-sputtering of bismuth and tellurium targets. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above $290 ^{\circ}C$. Change of dominant phase from rhombohedral $Bi_2Te_3$ to hexagonal BiTe was confirmed with X-ray diffraction analysis. The deviation from stoichiometric composition at high deposition temperature resulted in the change of structural and electrical characteristics. Seebeck coefficients of all samples have negative value, indicating the prepared $Bi_XTe_Y$ films are n-type thermoelectric. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of $225 \^{circ}$C (about -55 $\mu$V/K and $3\times10^{-4}$ W/$k^{2}$m, respectively). Deterioration of thermoelectric properties at higher temperature.

A Study on the Development of Green Road System for Heat Energy Harvesting (녹색도로의 열 에너지 하베스팅을 위한 시스템 개발에 관한 연구)

  • Jo, Byung-Wan;Lee, Duk-Hee;Lee, Dong-Yoon;Lee, Chang-Sub
    • International Journal of Highway Engineering
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    • v.13 no.1
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    • pp.87-96
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    • 2011
  • According to adverse effects of ecosystems due to a bulk of fossil fuel consumption, utilization of sustainable and renewable energy is required. In this paper, converting the energy crisis into an opportunity of new growth is expected by converting heat energy in asphalt pavement into electric power using thermoelectric effect. For this, experiments of inserting heat collector pipe and thermoelectric element into asphalt were performed, and the electric power of heat energy harvesting was measured for development of efficient harvesting system of heat energy. As the results of experiments, electric conversion of average 19.86W per day is possible at $1m^2$ conversion area at a depth of 5cm, and possibility of this system was confirmed. Consequently, a systematic "Green Road" using sustainable heat energy source in asphalt pavement simultaneously with environmental maintenance and econovic growth was suggested.

A Consideration on the Application of Thermoelectric Cooler to Obesity Therapy (열전 냉각장치의 비만치료 적용 방법론 고찰)

  • Ko, Yun-Seok;Lee, Woo-Cheol;Kim, In-Soo
    • The Journal of the Korea institute of electronic communication sciences
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    • v.7 no.6
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    • pp.1437-1442
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    • 2012
  • The contemporary peoples focus on treatment of obesity in order to prevent the adult disease and to manage the beauty. Although surgical treatment of obesity shows the reliable cure effect, it could cause side effects and has a disadvantage that postoperative recovery period is long. Accordingly, this paper compares and analyzes the non-operative treatments which can be of help to treat obesity. Also, it considers the obesity therapy based on the Peltier cooling system. And finally a basic control circuit based on Peltier module is designed for Peltier cooling-based obesity therapy system.

Thermoelectric Properties of the n-type Bi2(Te0.9Se0.1)3 Processed by Hot Pressing with Dispersion of 0.5 vol% TiO2 Nanopowders (0.5 vol% TiO2 나노분말을 분산시킨 n형 Bi2(Te0.9Se0.1)3 가압소결체의 열전특성)

  • Park, D.H.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.1
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    • pp.15-19
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    • 2013
  • The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powders, which were fabricated by melting/grinding method and dispersed with 0.5 vol% $TiO_2$ nanopowders, were hot-pressed in order to investigate the effects of $TiO_2$ dispersion on the thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. Excellent thermoelectric properties such as a maximum figure-of-merit of $2.93{\times}10^{-3}/K$ and a maximum dimensionless figure-of-merit of 1.02 were obtained for the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$. With dispersion of 0.5 vol% $TiO_2$ nanopowders, the maximum figure-of-merit and the maximum dimensionless figure-of-merit decreased to $2.09{\times}10^{-3}/K$ and 0.68, respectively.

Thin Film Multijunction Thermal Converter for Low Input Voltage with Low Frequency (저주파수 및 저입력전압용 박막형 다중접합 열전변환기)

  • Hwang, Chan-Soon;Lee, Hyung-Ju;Kim, Jin-Sup;Lee, Jung-Hee;Park, Se-Il;Kwon, Sung-Won
    • Journal of Sensor Science and Technology
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    • v.11 no.3
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    • pp.145-154
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    • 2002
  • NiCr-heaters with three different thicknesses ranging from 400 nm to 800 nm were fabricated and their characteristics were compared for the purpose of developing a chromel-alumel multijunction thermal converter for low input voltage with low frequency. The thermoelectric effect-induced AC-DC voltage transfer difference of the thermal converter with a built-in NiCr-heater of 400 nm-thickness was ${\pm}0.51{\sim}1.69\;ppm$ in the DC reversing frequency of $40\;Hz{\sim}10\;kHz$ with appling $0.5\;V_{rms}$ and the difference was increased to ${\pm}40{\sim}{\pm}115\;ppm$ in the frequency of $40\;Hz{\sim}1\;MHz$, when both thermoelectric effects and frequency effects were considered, showing the thermal converter would be suitable for the low input voltage application with low frequency.

Study on the Adsorption and Desorption Enhance Effect of Oyster Shell Using Peltier Element (페르체소자를 이용한 굴패각의 흡착 및 탈착촉진효과에 관한 연구)

  • Kim, Myoung-Jun
    • Journal of Power System Engineering
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    • v.17 no.1
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    • pp.71-76
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    • 2013
  • This study is experimentally performed for using the oyster shell as a desiccant in the batch type system. The peltier element(thermoelectric device) is used for absorbing and releasing the adsorption and desorption heat generation. The cooling and heating effects of peltier element exist in this experiment and these effects are generally known phenomena among some references. The increase in electric current induced into peltier element is effectively release the heat generation of adsorption and desorption. Consequently, the non-dimensional adsorption and desorption amount would increase with increase in electric current. However, in the case of adsorption, the increase of induced current into peltier element, the heat of cold side can not release sufficiently. So the heat of hot side of peltier is transferred into the cold side.

Thermoelectric Properties of the Hot-pressed n-Type $Bi_2({Te_{0.85}}{Se_{0.15}})_3$ Alloy Prepared by Mechanical Alloying (기계적 합금화 공정을 이용하여 제조한 n형 $Bi_2({Te_{0.85}}{Se_{0.15}})_3$ 가압소결체의 열전특성)

  • Kim, Hui-Jeong;O, Tae-Seong;Hyeon, Do-Bin
    • Korean Journal of Materials Research
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    • v.10 no.3
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    • pp.246-252
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    • 2000
  • Thermoelectric properties of the $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy, prepared by mechanical alloying and hot pressing, were investigated with the variation of the hot-pressing temperature ranging from $300^{\circ}C$ to $550^{\circ}C$. Contrary to the p-type behavior of single crystal, the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy exhibited n-type conduction without addition of donor dopant. When the $Bi_2(Te_{0.85}Se_{0.15})_3$ powders were annealed in $(50{\%}\;H_2+50{\%}\;Ar)$ atmosphere, the hot-pressed specimens exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Figure-of-merit of the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy was improved by hot pressing at temperatures above $450^{\circ}C$, and the maximum value of $1.92{\times}10^{-3}/K$ was obtained for the specimen hot-pressed at $550^{\circ}C$.

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Thermoelectric Properties of Al4C3-doped α-SiC (Al4C3 첨가 α-SiC의 열전변환특성)

  • 박영석;배철훈
    • Journal of the Korean Ceramic Society
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    • v.40 no.10
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    • pp.991-997
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    • 2003
  • The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.