• The Bulletin of The Korean Astronomical Society
• /
• v.38 no.2
• /
• pp.82.2-82.2
• /
• 2013

The NISS (Near-infrared Imaging Spectrometer for Star formation history) onboard NEXTSat-1 is being developed by KASI. The NISS will perform the imaging low-resolution spectroscopic observation in the near-infrared range for nearby galaxies, low background regions, starforming regions and so on. The off-axis reflecting telescope with a wide field of view (2 deg. ${\times}$ 2 deg.) will be operated in the wavelength range from 0.95 to $3.8{\mu}m$. In order to reduce thermal noise, a telescope and a HgCdTe infrared sensor will be cooled down to 200K and 80K, respectively. To evade a stray light outside a field of view and use limited space efficiently, the NISS adopted the off-axis reflective optical system. The primary and secondary mirrors, optomechanical part and mechanical structure were designed to use the same material. It will lessen the degradation of optical performance due to a thermal variation. The purpose of NISS is the observation of cosmic near-infrared background in the wide wavelength range as well as the detection of near-infrared spectral lines in nearby galaxies, cluster of galaxies and star forming regions. It will give us less biased information on the star formation history. In addition, we will demonstrate the space technologies related to the development of the Korea's leading near-infrared instrument for the future large infrared telescope, SPICA.

• Journal of Sensor Science and Technology
• /
• v.11 no.6
• /
• pp.342-349
• /
• 2002

New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

• Journal of Sensor Science and Technology
• /
• v.5 no.2
• /
• pp.61-67
• /
• 1996

The growth and characterization of heteroepitaxial $Si_{1-x}Ge_{x}$ films grown by the RTCVD (Rapid Thermal Chemical Vapor Deposition) method were described. For the growth of $Si_{1-x}Ge_{x}$ heteroepitaxial layers, $SiH_{4}$ / $GeH_{4}$ / $H_{2}$ gas mixtures were used. The growth conditions were varied to investigate their effects on the Si / Ge composition ratios, the interface abruptness and crystalline properties. The experimental data shows that the misfit threading dislocation in $Si_{1-x}Ge_{x}$ / Si heteroepitaxial film of about $400\;{\AA}$ thickness was not observed at the growth temperature of as low as $650^{\circ}C$, and the composition ratios of Si / Ge changed linearly with $SiH_{4}$ / $GeH_{4}$ gas mixing ratios in our experimental ranges. In the in-situ boron doping experiments, the doping abruptness would be controlled within several hundreds ${\AA}$/decade.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.21 no.11
• /
• pp.634-640
• /
• 2020

Failure analysis and heat-resistant were performed for an electric fuel pump that is installed in the fuel tank to transfer fuel to the engine of combat vehicles. The fuel pump with a DC motor was disassembled and inspected to determine the cause of failure. The failure phenomenon was classified into three categories based on observations of the inside of the housing: burnt winding, quick brush abrasion, and fuel leak into the pump. Based on the inspection results, it was estimated that overheating was the main cause of failure. The thermal test was conducted under the no-load condition in 24 hours, and the thermal sensor was installed on the stator surface and the brush holder to check the possibility of damage to the winding due to overheating. When the ambient temperature of the fuel pump was set to 68 ℃, the stator temperature increased to 135.9 ℃, and the winding of the motor was almost damaged. The test results confirmed the lack of heat resistance of fuel pump windings, and suggested that the type F of insulation class (below 155 ℃) of the windings and varnish should be replaced with type C or higher that can be used above 180 ℃.

• Journal of Sensor Science and Technology
• /
• v.23 no.1
• /
• pp.51-57
• /
• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Remote Sensing
• /
• v.32 no.5
• /
• pp.423-434
• /
• 2016

Surface emissivity and its background values according to each sensor are mandatorily necessary for Mid-Wavelength Infrared (MWIR) remote sensing to retrieve surface temperature and temporal variation. This study presents the methods and results of Land Surface Emissivity (LSE) of the MWIR according to land cover over the Korean Peninsula. The MWIR emissivity was estimated by applying the Temperature Independent Spectral Indices (TISI) method to the Visible Infrared Imaging Radiometer Suite (VIIRS) band 4 Day/Night images ($3.74{\mu}m$ in center wavelength). The obtained values were classified according to land-cover types, and the obtained emissivity was then compared with those calculated from a standard Advanced Spaceborne Thermal Emission Reflection Radiometer (ASTER) spectral library. The annual means of MWIR emissivity of Deciduous Broadleaf Forest (0.958) and Mixed Forest (0.935) are higher than those of Croplands (0.925) and Natural Vegetation Mosaics (0.935) by about 2-3%. The annual mean of Urban area is the lowest (0.914) with an annual variation of about 2% which is by larger than those (1%) of other land-covers. The TISI and VIIRS based emissivity is slightly lower than the ASTER spectral library by about 2-3% supposedly due to various reasons such as lack of land cover homogeneity. The results will be used to understand the MWIR emissivity properties of the Korean Peninsula and to examine the seasonal and other environmental changes using MWIR images.

• Journal of Sensor Science and Technology
• /
• v.6 no.6
• /
• pp.500-507
• /
• 1997

For fine control of operating temperature of shape memory alloy, we investigated the effect of thermal teratment of shape memory alloy with the impurity kind. The martensitic transformation temperature in a Cu-17.25Zn-15Al and Cu-17.25Zn-15Al-1Ag/Fe was measured using electrical resistivity as a function of quenching temperature. Order-disorder phase transition temperatures in parent phase were measured and kind of transition were distinguised by DSC(differential scanning calorimeter) with heating rate variation. And structual changes were studied with XRD. For the Cu-17.25Zn-15Al shape memory alloy, the order-disorder phase transition temperature, $T_{B2}$ and $T_{L21}$ was 809K and 610K and for the Cu-17.25Zn-15Al-1Ag and Cu-17.25Zn-15Al-1Fe specimen $T_{B2}$ and $T_{L21}$ was 794K and 610K, and 803K and 613K, respectively. In all the specimens, quenching from near $T_{B2}$ leads to an increase in martensitic temperature, whereas quenching from near $T_{L21}$ leads to an decrease in martensitic temperature.

• Journal of Sensor Science and Technology
• /
• v.6 no.5
• /
• pp.400-406
• /
• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analyzed with increasing annealing temperature($400{\sim}800^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to $SiO_{2}$ and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analyzed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater, active area was smaller size, Pt micro heater had better thermal characteristics. The temperature of Pt micro heater with active area, $200{\mu}m{\times}200{\mu}m$ was up to $400^{\circ}C$ with 1.5watts of the heating power.

• Journal of Sensor Science and Technology
• /
• v.6 no.5
• /
• pp.407-413
• /
• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.35 no.3
• /
• pp.265-272
• /
• 2002

Spatial distribution of Phytoplankton Pigment Concentration (PPC) and Sea Surface Temperature (SST) around the East Korean Warm Current (EKWC) was described, using both Coastal Zone Color Scanner (CZCS) images and Advanced Very High Resolution Radiometer (AVHRR) images in May, 1980. Water mass in this region can be classified into five categories in the horizontal profile of PPC and SST, nLw (normalized water-leaving radiance) images: (1) coastal cold water region associated with concentrations of dissolved organic material or yellow colored substances and suspended sediments, (2) cold water region of thermal frontal occurred by a combination of phytoplankton absorption and suspended materials, (3) warm water overlay region by the phytoplankton absorption than the suspended materials; (4) warm water region occurred by the low phytoplankton absorption, and (5) offshore region occurred by the high phytoplankton absorption. In particular, the highest PPC (>2.0 mg/m^3) area appeared in the CZCS and AVHRR images with a band shaped distribution of the thermal front and ocean color front region, which is located the coastal cold waters alonB western thermal front of the warm streamer of the EKWC. In this region, the highest PPC occurred by a combination of the high absorption of the phytoplankton (443 nm) and highest reflectance of suspended materials (550 nm). Another high PPC ($\simeq$$6\;mg/m^3$) appeared in the warm water overlay region inside warm streamer. High phytoplankton pigment concentration of this region was corresponding to the short wavelength of 443 nm, which represented phytoplankton absorption of the CZCS image.