Temperature dependance of Leakage Current of Nitrided, Reoxided MOS devices (질화, 재산화시진 모스 절연막의 온도 변화에 따른 누설전류의 변화)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 1998.06a
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- pp.71-74
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- 1998