• Journal of the Korean Chemical Society
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• v.54 no.1
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• pp.43-48
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• 2010

Polyamide derived from azo compound of o-amino phenol coupled with acetyl acetone, maleic anhydride acid and p-phenylene diamine were prepared. The prepared polyamide (PA) was refluxed with metal salts of transition metal ions include, $Co^{+2},\;Cr^{+2},\;Ni^{+2},\;Cu^{+2},\;Zn^{+2},\;Cd^{+2}$ and $Fe^{+3}$ in dimethyl formamide (DMF) in different molar ratios. These complexes were characterized and identified by elemental and thermal analysis, IR, 1H NMR spectra. The data showed that PA ligand coordinates with metal ions in abidentate manner through donating N=N and O-H groups. The metal ions are surrounded by coordinated water molecules and anions to establish the geometrical structure of the complexes. The thermal analysis degradation at different temperatures explained the weight loss of hydrated water and the decompositions of complexes until a constant weight loss of metal oxides is obtained.

• Analytical Science and Technology
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• v.5 no.4
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• pp.359-366
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• 1992

Using micro-Raman spectrometer, we investigated the evaluation of microstress on silicon surface after the local thermal oxidation. The induced stress of silicon surface after local thermal oxidation shows maximum value at the interface of silicon oxide and active area. The smaller the size of active area, the larger stress. From the evaluation of three other device isolation processes, A, B and moB, whose active size has $0.45{\mu}m$ in length, moB process is turned out to have the lowest stress value and the smallest bird's beak effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• Journal of the Korean Institute of Intelligent Systems
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• v.14 no.1
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• pp.1-8
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• 2004

In this paper, we propose neural network-based fault diagnosis method to diagnose of sensor in the gas monitoring system. In the proposed method, using thermal modulation of operating temperature of sensor, the signal patterns are extracted from the voltage of load resistance. Also, ART2 neural network is used for fault isolation. The performance and effectiveness of the proposed ART2 neural network based fault diagnosis method are shown by simulation results using real data obtained from the gas monitoring system.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.46-54
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• 1998

A planar Bi-Sb multijunction thermal converter, which is consisted of a linear or bifilar thin film NiCr-heater and a thin film Bi-Sb thermopile, has been fabricated, and its ac-dc transfer characteristics were examined in a frequency range from 10 Hz to 10 KHz. In order to increase the thermal sensitivity and to decrease the ac-dc transfer error of a thermal converter, the heater and the hot junctions of a thermopile were prepared on a Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-diaphragm which acts as a thermal isolation layer, and the cold junctions on the Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-thin film supported with the silicon rim which functions as a heat sink. The respective thermal sensitivities in air and in a vacuum of the converter with a built-in bifilar heater were about 14.0 ㎷/㎽ and 54.0 ㎷/㎽, and the ac-dc voltage and the current transfer difference ranges in air were about $\pm$0.60 ppm and $\pm$0.11 ppm, respectively, indicating that the ac-dc transfer accuracy of the converter are much higher than that of a commercial 3-dimensional multijunction thermal converter. However, the output thermoelectric voltage fluctuation of the converter was rather high.

• Journal of the Korean Geotechnical Society
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• v.30 no.9
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• pp.57-66
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• 2014

The ground in cold region consists of active and permafrost layers. The active layer at the unstable state may cause ground corrosion and uplift, when the temperature of frozen ground increases due to seasonal changes. The thermosyphon is one of the stabilization methods to maintain the ground stability in the frozen ground. The thermosyphon is a closed two-phase convection device that extracts heat from the ground and discharges it into the atmosphere. In this study, ground freezing experiment using a thermosyphon and simulated ground with the isolation material was conducted to evaluate the thermal performance of the thermosyphon. In order to consider the thermal performance of the thermosyphon, commercial numerical program (TEMP/W) was adopted. Likewise, the thermal performance of thermosyphon and thermal properties of ground were applied in the numerical model. In a series of comparisons with experiment results and numerical study, thermal performance of thermosyphon can be evaluated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.149-158
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• 2005

This paper describes design, fabrication, and application of the silicon based temperature controllable micro reactor. In order to achieve fast temperature variation and low energy consumption, reaction chamber of the micro reactor was thermally isolated by etching the highly conductive silicon around the reaction chamber. Compared with the model not having thermally isolated structure, the thermally isolated micro reactor showed enhanced thermal performances such as fast temperature variation and low energy consumption. The performance enhancements of the micro reactor due to etched holes were verified by thermal experiment and numerical analysis. Regarding to 42 percents reduction of the thermal mass achieved by the etched holes, approximately 4 times faster thermal variation and 5 times smaller energy consumption were acquired. The total size of the fabricated micro reactor was $37{\times}30{\times}1mm^{3}$. Microchannel and reaction chamber were formed on the silicon substrate. The openings of channel and chamber were covered by the glass substrate. The Pt electrodes for heater and sensor are fabricated on the backside of silicon substrate below the reaction chamber. The dimension of channel cross section was $200{\times}100{\mu}m^{2}$. The volume of reaction chamber was $4{\mu}l$. The temperature of the micro reactor was controlled and measured simultaneously with NI DAQ PCI-MIO-16E-l board and LabVIEW program. Finally, the fabricated micro reactor and the temperature control system were applied to the thermal denaturation and the trypsin digestion of protein. BSA(bovine serum albumin) was chosen for the test sample. It was successfully shown that BSA was successfully denatured at $75^{\circ}C$ for 1 min and digested by trypsin at $37^{\circ}C$ for 10 min.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.132-138
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• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.