• Title/Summary/Keyword: thermal ion mass spectrometer

Search Result 14, Processing Time 0.022 seconds

Thermal diffusion properties of Zn, Cd, S, and B at the interface of CuInGaSe2 solar cells

  • Yoon, Young-Gui;Choi, In-Hwan
    • Current Photovoltaic Research
    • /
    • v.1 no.1
    • /
    • pp.52-58
    • /
    • 2013
  • Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

A Study on Modified Silicon Surface after $CHF_3/C_2F_6$ Reactive Ion Etching

  • Park, Hyung-Ho;Kwon, Kwang-Ho;Lee, Sang-Hwan;Koak, Byung-Hwa;Nahm, Sahn;Lee, Hee-Tae;Kwon, Oh-Joon;Cho, Kyoung-Ik;Kang, Young-Il
    • ETRI Journal
    • /
    • v.16 no.1
    • /
    • pp.45-57
    • /
    • 1994
  • The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

  • PDF

Intercomparison of vacuum standards of Korea, United Kingdom, and Japan (진공표준의 국제비교 연구)

  • 홍승수;신용현;임종연;이상균;정광화
    • Journal of the Korean Vacuum Society
    • /
    • v.6 no.4
    • /
    • pp.308-313
    • /
    • 1997
  • TDS (Thermal Lkso~ption Spectroscopy)system, for diagnosis of CRT manufacturing process, was designed and constructed. Outgassings and themla1 desorptions from the part or materials of CRT can be measured and analysed with this system at various temperatures. The system is consisted of 3 pirrts. vacuum chamher and pumping system with variable conductance, sample heating stages & their controller, and outgassing measurement devices, like as ion gauge or quadrupole mass spectrometer. The ultimate pressure of the system was under $1\times10^{-7}$ Pa. With the variable conductance system, the effective pumping speed of the chamber could he controlled from sub 11s to 100 11s. The effective pumping speed values were determined by dynamic flow measurement principle. The temperatures and ramp rate of sample were controlled by tungsten heater and PID controller up to $600^{\circ}C$ within t $\pm 1^{\circ}C$$difference to setting value. Ion gauge & QMS were calibrated for quantitative measurements. Some examples of TDS measurement data ;ind application on the CRT process analysis were shown.

  • PDF

Microstructure evolution and effect on deuterium retention in oxide dispersion strengthened tungsten during He+ irradiation

  • Ding, Xiao-Yu;Xu, Qiu;Zhu, Xiao-yong;Luo, Lai-Ma;Huang, Jian-Jun;Yu, Bin;Gao, Xiang;Li, Jian-Gang;Wu, Yu-Cheng
    • Nuclear Engineering and Technology
    • /
    • v.52 no.12
    • /
    • pp.2860-2866
    • /
    • 2020
  • Oxide dispersion-strengthened materials W-1wt%Pr2O3 and W-1wt%La2O3 were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 1021 ions/m2 under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr2O3 and W-1wt%La2O3. At 1.0 × 1020 He+/m2, the average loops size of the W-1wt%Pr2O3 was 4.3 nm, much lower than W-1wt% La2O3 of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 1021 He+/m2 on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He+ pre-irradiation, deuterium (D) retention of doped W materials increased after He+ irradiation, whose retention was unsaturated at the damage level of 1.0 × 1022D2+/m2. The present results implied that irradiation effect of He+ ions must be taken into account to evaluate the deuterium retention in fusion material applications.