• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Journal of Mechanical Science and Technology
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• 제18권10호
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• pp.1712-1721
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• 2004

A method of measuring the thermal diffusivity of semi-infinite solid material at room temperature using photothermal displacement is proposed. In previous works, within the constant thickness of material, the thermal diffusivity was determined by the magnitude and phase of deformation gradient as the relative position between the pump and probe beams. In this study, however, a complete theoretical treatment of the photothermal displacement technique has been performed for thermal diffusivity measurement in semi-infinite solid materials. The influence of parameters, such as, radius and modulation frequency of the pump beam and the thermal diffusivity, was studied. We propose a simple analysis method based on the zero -crossing position of real part of deformation gradient and the minimum position of phase as the relative position between two beams. It is independent of parameters such as power of pump beam, absorption coefficient, reflectivity, Poisson's ratio, and thermal expansion coefficient.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.237-241
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• 1990

A detailed theoretical and experimental study of k-na exchange in soda lime silicate glasses by RTP is presented. Concentration profiles i.e. index profiles are given by complementary error function added Gaussian function. The estimated diffusion coefficient is 1.54${\mu}{\textrm}{m}$2/min.

• Current Photovoltaic Research
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• 제1권1호
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• pp.52-58
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• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• 전기의세계
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• 제26권2호
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• pp.95-98
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• 1977

Commercially available fuel oil for power plant contains relatively much sulphur, which means accordingly high content sulphur deoxide in exhaust gas. Sulphur deoxide has been identified as the worst-pollutant caused by thermal power generation. This paper primarily deals with the stack gas diffusion effects of various parameters, namely vertical stability, wind velocity, exhaust gas velocity, stack height, etc., on the ground concentration. thereof the relation between stack height and maximum plant capacity is analyzed from the standpoint of air pollution prevention. The limit capacity is calculated by means of mean concentration introducing Mead and Lowry coefficient respectively.

• 분석과학
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• 제6권5호
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• pp.453-462
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• 1993

본 연구는 열장 흐름 분획법을 이용하여 혼합 용매에서의 폴리스티렌의 머무름을 측정하고 용매의 조성이 시료의 머무름거동에 미치는 영향을 조사하였다. 시료는 분자량이 35,000, 110,000, 200,000, 470,000인 폴리스티렌을, 이동상은 테드라히드로퓨란(THF), 클로로포름(CHL), 시클로헥산(CH), 그리고 벤젠(BZ)의 단일용매 및 혼합용매를 사용하였다. 시료의 분자량과 혼합용매의 조성의 변화에 따라서 시료의 머무름비와 열확산계수를 측정하였으며, 그 값들을 시료와 용매의 물리화학적인 성질과 연관시켜 설명하였다. 즉, 시료의 머무름비는 이동상의 밀도의 영향을 크게 받으며 이동상의 밀도가 클수록 머무름비가 증가함을 알 수 있었다. 또한 이동상에 포함된 poor 용매의 함량이 증가할수록 열확산계수는 감소하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2303-2308
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• 2007

Experiments were performed to determine the thermal (or turbulent) diffusion coefficient (TDC) and to investigate the critical heat flux (CHF) performance in the 5${\times}$5 rod bundle with 5 unheated rods which are supported by Hybrid Mixing Vane. In this study, HFC-134a fluid was used as working fluid and the fluid temperature were measured in the important subchannels. To determine the TDC value, the measured fluid temperatures were compared with the predicted values obtained from the MATRA code. The best optimized value of ${\beta}$ was found to be 0.02 by considering prediction statistics, i.e., average and standard deviations of the differences between the experimental results and code calculations. Using the best optimized value of ${\beta}$ as 0.02, the MATRA code predicts the test results of the fluid temperature within ${\pm}$1.0 % of error. According to the experimental results on CHF of 5 non-heating guide tubes, the case with non-heating guide tube showed a little good performance in terms of CHF.

• 대한토목학회논문집
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• 제30권1A호
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• pp.53-59
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• 2010

최근 들어 적외선을 이용하여 콘크리트 구조물의 결함 또는 공동 등을 평가하려는 비파괴 연구가 활발하게 진행되고 있으며, 이는 유지관리기법의 중요한 부분을 이루고 있다. 적외선 화상분석(Infrared Thermography)을 콘크리트 표면에 적용할 경우, 콘크리트의 표면온도는 표면을 구성하는 재질과 열적특성(비열, 열전도율, 열전달율)에 따라 그 응답이 다르게 나타나게 된다. 서로 다른 배합을 가지는 시멘트 모르타르에서는 공극률이 다르게 구성되고, 표면에서 공극률의 차이는 열에 노출된 뒤, 냉각되는 과정에서 열적 거동이 다르게 평가된다. 한편 이러한 공극률은 강도 및 염화물 확산계수와 같은 역학적/내구적 특성에 영향을 주기도 한다. 본 연구에서는 외부에서 열을 가하여 측정하는 능동방식(active type)을 이용하여, 표면의 온도변화를 분석하였다. 물-시멘트비 55%와 65%인 시멘트 모르타르 시편을 제작하였으며, 공극률, 압축강도, 염화물 확산계수 등의 물리적 특성값들이 평가되었다. 이후 동일한 실내조건(온도 $20{\sim}22^{\circ}C$, 습도 55-60%)에서 적외선 화상분석 기법을 적용하였다. 시간의 경과에 따라 공극을 많이 포함하는 시편의 경우, 표면 온도가 상대적으로 증가하였으며, 온도가 일정해지는 시점(임계시점)이 단축되고 있음을 확인할 수 있었다. 이러한 특성은 콘크리트와 같이 공극과 골재를 가지고 있는 복합재료의 품질 평가에 적용할 수 있음을 시사한다. 한편 공극률과 실험상수를 고려하여, 공극률에 따라 변화하는 임계시간에 대한 계산식을 제안하였다. 본 논문에서는 시멘트 모르타르의 공극량의 변화에 따른 물리적 변화와 이에 따른 열특성 변화가 논의될 것이다.

• 한국군사과학기술학회지
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• 제15권2호
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• pp.201-207
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• 2012

Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.