• Asian-Australasian Journal of Animal Sciences
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• 제26권5호
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• pp.732-742
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• 2013

Flavour comprises mainly of taste and aroma and is involved in consumers' meat-buying behavior and preferences. Chicken meat flavour is supposed to be affected by a number of ante- and post-mortem factors, including breed, diet, post-mortem ageing, method of cooking, etc. Additionally, chicken meat is more susceptible to quality deterioration mainly due to lipid oxidation with resulting off-flavours. Therefore, the intent of this paper is to highlight the mechanisms and chemical compounds responsible for chicken meat flavour and off-flavour development to help producers in producing the most flavourful and consistent product possible. Chicken meat flavour is thermally derived and the Maillard reaction, thermal degradation of lipids, and interaction between these 2 reactions are mainly responsible for the generation of flavour and aroma compounds. The reaction of cysteine and sugar can lead to characteristic meat flavour specially for chicken and pork. Volatile compounds including 2-methyl-3-furanthiol, 2-furfurylthiol, methionol, 2,4,5-trimethyl-thiazole, nonanol, 2-trans-nonenal, and other compounds have been identified as important for the flavour of chicken. However 2-methyl-3-furanthiol is considered as the most vital chemical compound for chicken flavour development. In addition, a large number of heterocyclic compounds are formed when higher temperature and low moisture conditions are used during certain cooking methods of chicken meat such as roasting, grilling, frying or pressure cooking compared to boiled chicken meat. Major volatile compounds responsible for fried chicken are 3,5-dimethyl-1,2,4-trithiolanes, 2,4,6-trimethylperhydro-1,3,5-dithiazines, 3,5-diisobutyl-1,2,4-trithiolane, 3-methyl-5-butyl-1,2,4-trithiolane, 3-methyl-5-pentyl-1,2,4-trithiolane, 2,4-decadienal and trans-4,5-epoxy-trans-2-decenal. Alkylpyrazines were reported in the flavours of fried chicken and roasted chicken but not in chicken broth. The main reason for flavour deterioration and formation of undesirable "warmed over flavour" in chicken meat products are supposed to be the lack of ${\alpha}$-tocopherol in chicken meat.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• 폴리머
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• 제24권6호
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• pp.829-836
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• 2000

SMC 욕조 생산 시 발생하는 폐 FRP와 석재 가공공정에서 발생되는 석분슬러지를 재활용하기 위하여 불포화에스테르 매트릭스 수지에 분말 충전하여 복합재를 제조하였다. 또한 충전제와 매트릭스 간의 계면결합력을 향상시키기 위해 석분을 실란 커플링제 ${\gamma}$-methacryloxypropyltrimethoxysiiane (${\gamma}$-MPS)로 전처리하여 복합재를 제조하고 기계적 물성 및 계면현상을 관찰하였다. 복합재의 굴곡탄성율은 석분함량이 10 wt%, 실란커플링제의 농도가 3 wt%일 때 가장 우수하였으며 석분 충전량이 증가함에 따라 감소하는 경향을 보였다. 또한 복합재의 초기 열분해온도는 352~359$^{\circ}C$이었으며 이 온도에서 중량감소율은 약 3%로 충전제의 양에 관계없이 거의 일정한 경향을 보였다. ${\gamma}$-MPS 처리에 따른 복합재의 물성변화를 관찰한 결과 충전제와 매트릭스 수지간 계면결합력이 증진되어 물리 화학적으로 안정한 결합을 이루고 있고 pull out현상이 발생하지 않음을 확인할 수 있었다.

• 한국재료학회지
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• 제9권5호
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• pp.503-508
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• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.

• 폴리머
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• 제37권2호
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• pp.156-161
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• 2013

페놀계 산화방지제는 가공 및 사용 시 열분해를 방지함으로써 뛰어난 열 안정성을 제공하는 대표적인 1차 산화방지제이다. 그러나 NOx 가스를 포함한 특정 환경에 의해 황변이 일어나기 쉽기 때문에 2차 산화방지제를 추가로 도입하여 시너지효과를 기대하는 경우가 많다. 열에 취약한 비결정성 폴리알파올레핀 수지(APAO)에 여러 가지 페놀계 1차 및 2차 산화방지제를 도입하여 황변 여부를 조사한 결과 2차 산화방지제의 함량이 증가할수록 황변이 줄어들었으며 BHT와 같은 단순 구조의 폐놀계 산화방지제보다 긴 알킬 사슬을 도입시켜 입체장애효과를 증대시킨 산화방지제가 2차 산화방지제와의 시너지 효과가 더 큰 것으로 확인되었다.

• Nuclear Engineering and Technology
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• 제43권3호
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• pp.301-308
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• 2011

The diametral creep of pressure tubes (PTs) in CANDU (CANada Deuterium Uranium) reactors is one of the principal aging mechanisms governing the heat transfer and hydraulic degradation of the heat transport system (HTS). PT diametral creep leads to diametral expansion, which affects the thermal hydraulic characteristics of the coolant channels and the critical heat flux (CHF). The CHF is a major parameter determining the critical channel power (CCP), which is used in the trip setpoint calculations of regional overpower protection (ROP) systems. Therefore, it is essential to predict PT diametral creep in CANDU reactors. PT diametral creep is caused mainly by fast neutron irradiation, temperature and applied stress. The objective of this study was to develop a bundle position-wise linear model (BPLM) to predict PT diametral creep employing previously measured PT diameters and HTS operating conditions. The linear model was optimized using a genetic algorithm and was devised based on a bundle position because it is expected that each bundle position in a PT channel has inherent characteristics. The proposed BPLM for predicting PT diametral creep was confirmed using the operating data of the Wolsung nuclear power plant in Korea. The linear model was able to predict PT diametral creep accurately.

• 한국자기학회지
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• 제22권6호
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• pp.221-227
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• 2012

고특성 영구자석은 하이브리드 및 전기자동차의 구동모터와 풍력발전에 적용되면서 크게 주목을 받고 있다. Nd-Fe-B 영구자석은 가장 높은 최대자기에너지적을 가지고 있지만 고온(${\sim}200^{\circ}C$)의 구동환경에서는 보자력이 급격히 감소하기 때문에 사용할 수 없는 단점을 가지고 있다. 그러므로 큰 보자력을 가지는 Nd-Fe-B 영구자석에 대한 개발이 요구되고 있다. Nd-Fe-B 소결자석에서 보자력을 증가시키기 위해서는 Nd를 Dy 또는 Tb으로 치환하면 쉽게 증가시킬 수 있다. 그러나 이들 원소는 Fe와 반강자성 결합을 하여 잔류자속밀도를 낮추고, 적은 매장량과 한정된 지역에 편재되어 있어 수요급증에 따른 자원수급 및 가격 급등의 문제를 가지고 있다. 따라서, Dy 및 Tb과 같은 중희토류를 사용하지 않거나 최소한의 양을 사용하여 보자력을 증가시키고자 하는 연구가 많이 진행되고 있다. 본 논문에서는 이러한 중희토류 원소의 저감 및 대체에 대한 연구들을 소개하고자 한다.

• 멤브레인
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• 제26권2호
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• pp.141-145
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• 2016

고분자전해질막은 전극 이외에 전기 화학 연료전지의 성능을 결정하는 중요한 요소이다. 고분자전해질막은 가스나 양성자 등의 작은 분자를 선택적으로 수송해야 한다. 고분자전해질막을 투과한 가스는 급속히 전기 화학적 환원을 발생시켜 음극 촉매의 열화를 유발하기 때문에 수소 장벽으로 작동해야 하며 가능한 한 빨리 양성자를 이동시켜야 한다. 지금까지 고분자전해질막의 수소 기체 투과도를 측정하는데 한정된 방법(예 : Constant volume/variable pressure (Time-lag)법)을 사용했다. 그러나 측정의 대부분은 고분자전해질막은 건조된 진공 하에서 이루어진다. 그렇지 않으면 얻어진 수소 투과도는 측정 오차가 커지는 원인이 되기 쉽다. 이 연구에서는 일반적으로 고분자전해질막으로 사용되는 Nafion212의 수소 가스 투과 특성을 온도와 습도가 동시에 제어되는 in-situ 측정 시스템을 이용하여 평가하였다.

• 한국결정성장학회지
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• 제24권1호
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• pp.41-45
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• 2014

다양한 공정 조건으로 $SiN_x$와 $SiO_2$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. Plasma enhanced chemical vapor deposition(PECVD)을 이용하여 증착된 $SiN_x$ 박막의 경우, 증착 두께가 증가함에 따라 페시베이션 특성이 향상되는 것을 관찰하였다. 이는 PECVD 증착 공정 중 유입되는 수소 원자들이 실리콘 표면에 존재하는 Dangling bond와 결합하여 소수 캐리어의 재결합 현상을 효과적으로 감소시켰기 때문이다. 건식 산화법으로 형성된 $SiO_2$ 박막은 습식 산화법으로 형성된 것 보다 치밀한 계면 구조를 가짐으로 인하여 약 20배 이상 우수한 패시베이션 특성을 나타내었다. 건식 산화 공정 온도가 증가함에 따라 패시베이션 특성이 열화되는 현상이 발생하였고, Capacitance-voltage(C-V) 및 Conductance-voltage(G-V) 분석을 통하여 $SiO_2$/실리콘 계면에 존재하는 계면 결함 밀도 증가에 의해 나타나는 현상임을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.