• Title/Summary/Keyword: thermal contact

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Analysis of Dynamic Characteristics of a HDD Spindle System Supported by Ball Bearing Due to Temperature Variation (온도 변화에 따른 HDD 회전축계 동특성 해석)

  • 김동균;장건희;한재혁;김철순
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2003.05a
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    • pp.578-584
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    • 2003
  • This paper presents a method to investigate the characteristics of a ball bearing and the dynamics of a HDD spindle system due to temperature variation. Finite element model is developed fer the rotating and stationary parts of a HDD spindle system separately to determine their thermal deformations by using ANSYS, a finite element program. Then, the relative position of the rotating part with respect to the stationary part is determined by solving the equilibrium equation of the contact force between upper and lower ball bearings. The validity of the proposed method is verified by comparing the theoretical natural frequencies of a HDD spindle system with the experimental ones before and after temperature variation. It shows that the elevated temperature results in the increase of contact angle and the decrease of bearing deformation, contact force and bearing stiffness, which result in the decrease of the natural frequencies of a HDD spindle system.

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Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

  • Kim, Young-Min;Yoon, Ho-Cheol;Lee, Jong-Hyun
    • ETRI Journal
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    • v.27 no.4
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    • pp.433-438
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    • 2005
  • We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of $5 {\mu}m$, and a width of $50{\mu}$ and a length of $800 {\mu}m$. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was $170 {\mu}m$, and an annealing process was performed for 20 min at $500^{\circ}C$. The contact resistance of the newly fabricated probe card was less than $2{\Omega}$, and its lifetime was more than 20,000 turns.

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Thermal Stress Analysis of a Fuel Cell Stack using an Orthotropic Material Model (복합재료 연료전지 스택의 열응력 해석)

  • Jeon Ji Hoon;Hwang Woonbong;Um Sukkee;Kim Soowhan;Lim Tae Won
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2004.04a
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    • pp.206-209
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    • 2004
  • Mechanical behavior of a fuel stack was studied using an orthotropic material model. The fuel stack is essentially composed of a bipolar plate (BP), a gasket, an end plate, a membrane electrolyte assembly (MEA), and a gas diffusion layer (GDL). Each component is fastened with a suitable pressure. It is important to maintain a suitable contact pressure distribution of BP, because it influences the power efficiency of the fuel cell stack. When it is exposed to high temperature, its behavior must be stable. Hence, we performed stress analysis at high temperature as well as at room temperature. At high temperature, the contact pressure distribution becomes poor. Many patents have shown that using an elastomer can overcome this phenomena. Its effect was also studied. By using an elastomer, we found a good contact pressure distribution at high temperature as well as at room temperature.

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Evaluation of Residual Stress of railway wheel (차륜/래일 접촉에 의한 차륜의 잔류응력 평가)

  • Seo Jung-Won;Goo Byeung-Choon;Chung Heung-Chai
    • Proceedings of the KSR Conference
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    • 2003.05a
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    • pp.668-673
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    • 2003
  • A wheel and axle failure can cause a derailment with its attendant loss of life and property. The service conditions of railway vehicles have become severe in recent years due to a general increase in operating speeds. Damages of railway wheel are a spalling by wheel/rail contact and thermal crack by braking heat etc. One of the main source of damage is a residual stress. therefore it is important to evaluate exactly. A Residual stress of wheel is formed at the process of heat treatment when manufacturing. it is changed by contact stress developed by wheel/rail contact. Distributions of residual stress vary according to a magnitude of wheel load, a magnitude of friction when acceleration and deceleration. The objective of this paper is to estimate the influence of wheel motion on the residual stress distribution in the vicinity of the running surface.

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Comparative study of air gap, direct contact and sweeping gas membrane distillation configurations

  • Loussif, Nizar;Orfi, Jamel
    • Membrane and Water Treatment
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    • v.7 no.1
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    • pp.71-86
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    • 2016
  • The present study deals with a numerical simulation for the transport phenomena in three configurations of Membrane Distillation (Air Gap, Direct Contact and Sweeping Gas Membrane Distillation) usually used for desalination in order to make an objective comparison between them under the same operating conditions. The models are based on the conservation equations for the mass, momentum, energy and species within the feed saline and cooling solutions as well as on the mass and energy balances on the membrane sides. The theoretical model was validated with available data and was found in good agreement. DCMD configuration provided the highest pure water production while SGMD shows the highest thermal efficiency. Process parameters' impact on each configuration are also presented and discussed.

Doping-level dependent dry-etch damage of in n-type GaN (n형 GaN의 doping 농도에 따르는 건식 식각 손상)

  • Lee, Ji-Myon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.417-420
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    • 2004
  • The electrical effects of dry-etch on n-type GaN by an inductively coupled $Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the ${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface.

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Novel Wafer Warpage Measurement Method for 3D Stacked IC (3D 적층 IC제조를 위한 웨이퍼 휨 측정법)

  • Kim, Sungdong;Jung, Juhwan
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.86-90
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    • 2018
  • Standards related to express the non-flatness of a wafer are reviewed and discussed, for example, bow, warp, and sori. Novel wafer warpage measurement method is proposed for 3D stacked IC application. The new way measures heat transfer from a heater to a wafer, which is a function of the contact area between these two surfaces and in turn, this contact area depends on the wafer warpage. Measurement options such as heating from room temperature and cooling from high temperature were experimentally examined. The heating method was found to be sensitive to environmental conditions. The cooling technique showed more robust and repeatable results and the further investigation for the optimal cooling condition is underway.

Pd/Ge-based Emitter Ohmic Contacts for AlGaAs/GaAs HBTs (AlGaAs/GaAs HBT 에미터 전극용 Pd/Ge계 오믹 접촉)

  • Kim, Il-Ho
    • Korean Journal of Materials Research
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    • v.13 no.7
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    • pp.465-472
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    • 2003
  • Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

Research on Overheat Protection Techniques of Connection Parts of MCCB by Poor Contact (MCCB 단자 접속부의 접촉불량에 의한 과열사고 방지기법에 관한 연구)

  • Kim, Dong-Woo;Lee, Ki-Yeon;Moon, Hyun-Wook;Kim, Hyang-Kon;Cho, Chung-Seog
    • Fire Science and Engineering
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    • v.22 no.4
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    • pp.54-60
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    • 2008
  • In this study, damage characteristics of MCCB and terminal block due to poor contact were analyzed, and various poor contact detection techniques were suggested. Firstly, the detection techniques using thermocouple and infrared thermal camera were analyzed respectively. Also, thermo-cap during poor contact detected abnormal status effectively by changing its color, and the detection system using an odor detector and odor capsules was analyzed. Lastly, poor contact detection screw was made using characteristics of fusible alloy, and we applied the poor contact detection screw to terminal block. The above methods could prevent electrical fire caused by poor contact effectively if they are used properly.

Water Contact Angles of Graphene Transferred by Wet and Dry Transfer Methods (전사 방법에 따른 그래핀의 물 접촉각 변화)

  • Yoon, Min-Ah;Kim, Chan;Jung, Hyun-June;Kim, Jae-Hyun;Kim, Kwang-Seop
    • Tribology and Lubricants
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    • v.34 no.2
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    • pp.60-66
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    • 2018
  • Graphene is a monolayer of carbon atoms (approximately 0.34 nm), arranged in a honeycomb network. It has been hailed as a next-generation flexible and transparent material because it has high electrical and thermal conductivities, excellent mechanical properties, as well as flexible and transparent properties. The wettability of graphene alters its adhesion or surface energy, and it is therefore an important parameter influencing its application in the fabrication of next-generation flexible and transparent electronics. Studies on the wettability of graphene are numerous and various opinions exist. However, almost all of these studies use the wet transfer method to transfer the graphene. In this study, therefore, we investigated the effect of wet and dry transfer methods on water contact angles of graphene on a substrate. The contact angles of substrates vary depending on the type of substrate. It was found that after graphene is transferred to the substrate, regardless of transfer method, the graphene/substrate contact angle increases to a value. The contact angle of graphene transferred using the dry transfer method is higher than the contact angle of graphene transferred using wet transfer methods. The wet transferred graphene is affected by the poly(methyl methacrylate) (PMMA) residue and the polar surface of substrate. The dry transferred graphene is influenced by the conformal contact between graphene and substrate.