• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.415-420
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• 2007

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1215-1215
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• 2015

본 연구에서는 상용 XLPE 절연체에 ES(한전)의 장기과통전 시험 기준을 참고하여, 가속 열 열화 하였고, 열화 전/후의 절연특성을 비교하기 위하여 VLF(0.1Hz) 내전압 파괴시험을 수행하였다. 또한, 그 결과를 Weibull plot하여 절연특성을 통계적으로 비교 및 분석하였다.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.436-439
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• 2008

It has been known that the value of soil resistance drops when a high impulse curennt is injected into a grounding electrode. In this paper, impulse generator is used to investigate the dry soil and wet soil characteristics in cylinderical test cell. The impulse resistances and breakdown characteristics were discussed based on its voltage and current traces. As a result, sand resistances are decreased with increasing the applied currents. It was thought that a decrease in resistance of dry sand with increasing current is due to both thermal and ionization processes. On the other hand, in case there is no water presence in the soil, the reduction in resistance as the currents are of dry sand increased is mainly due to the ionization process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.235.2-235.2
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• 2014

Plasma hardly grows in low pressure because of lack of collision. Especially, in extremely low pressure like 1 mTorr, the experiment scale is far larger than mean free path therefore plasma is hardly generated in such low pressure. But low pressure plasma has useful properties like low damage or fine sputtering process because it has typically low electron density. In here, thermal electron is used to make breakdown in low pressure easily and cylindrical geometry is used to help discharge easily. And we changed magnetic field strength to control electron density or temperature. In low pressure, density and temperature behavior is very interesting so its characteristics are examined here.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.171-174
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• 1994

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.23-25
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• 2018

With respect to the electrode structure and the discharge characteristics, the atmospheric pressure plasma sheet of a thin polyimide film is introduced in this study; here, the flexible plasma device of a dielectric-barrier discharge with the ground electrode and the high-voltage electrode formulated on each surface of a polyimide film whose thickness is approximately $100{\mu}m$, that is operated with a sinusoidal voltage at a frequency of 25 kHz and a low voltage from 1 kV to 2 kV is used. The streamer discharge is appeared along the cross-sectional boundary line between two electrodes at the ignition stage, and the plasma is diffused on the dielectric-layer surface over the high-voltage electrode. In the development of a plasma sheet with thin dielectric films, the avoidance of the insulation breakdown and the reduction of the leakage current have a direct influence on the low-voltage operation.

• Food Science and Biotechnology
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• v.18 no.1
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• pp.118-123
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• 2009

In order to find out the effect of low level of starch acetylation on physicochemical properties of potato starch, amylose content, digestibility of raw and gelatinized starch, thermal properties, pasting properties, and the swelling power of native and acetylated potato starches were measured. The amylose content was significantly lower in acetylated starch than in their counterpart native starches. Though a tendency in the decrease in digestibility of raw starch was observed with starch acetylation, acetylation did not alter the proportion of readily digestible starch (RDS), slowly digestible starch (SDS), and resistant starch (RS) of both raw and gelatinized potato starches. No clear increase in the swelling power was observed, however, the peak and onset gelatinization temperatures and the enthalpy required for starch gelatinization decreased with starch acetylation. Peak and breakdown viscosities were reduced due to acetylation of potato starch while final viscosity and set back were increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

• Electrical & Electronic Materials
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• v.6 no.4
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• pp.366-373
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• 1993

고체구조와 절연파괴의 관계를 확실하게 알아보기 위하여 온도 100[.deg.C]의 실리콘유 내에서 1시간 열처리한 시료에 대해서 직류(DC)와 임펄스 절연파괴특성을 검토했다. 시료의 결정화도는 적외선 흡수와 X선 회절실험 측정방법으로 평가했으며 그리고 시료의 결정립크기와 분상은 시차주사 열량측정을 이용하였다. 실험결과 결정화도의 크기는 서냉, 수냉, 원시료 그리고 급냉시료 순으로 적어짐을 확인하였고 각각 70.23[%], 61.6[%], 56.75[%] 및 34.7[%]를 얻었다. 온도 30, 50[.deg.C]에서 임펄스 절연파괴특성은 결정화도의 감소에 따라 높아지는데 이것은 전자열적파괴를 시사하고 있다. 그리고 온도의 증가에 따라 임펄스 절연파괴강도는 감소되는데 이것은 Frohlich-type의 파괴이론을 제시한다. 또한 직류절연파괴는 저온영역에서 결정화도에 거의 의존하지 않지만 그러나 고온영역에서는 약간 의존한다.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.813-815
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• 2000

This paper is concerned with the development of PC based computer simulation and design tools for auto-expansion SF6 circuit breaker with the arc rotary. The simulation model takes into account radiation transport, turbulence enhanced momentum. energy transport. The conversation gas dynamic equation together with Maxwells equations are solved. For the arc simulation the straightforward procedure has been used. The temperature, gas density and velocity space distributions within the circuit breaker are simulated in details. The presented results show that the computer simulation of gas flow in SF6 interrupter is a subject of much interest for design and optimization of contacts. The presented results show that the shape and sizes of contacts are chosen by this tool from judiciously compromise between electrical breakdown strength and interruption ability that are functions of gas flow parameters.