• Applied Biological Chemistry
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• v.30 no.3
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• pp.285-290
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• 1987

As a basic research for inhibition of enzymatic browning of apples during dehydration or processing, peroxidase was extracted from Fuji apples to investigate heat inactivation, and chemical inhibition. Peroxidase showed the highest activity at $35^{\circ}C$ and pH 5.5 using substrates of p-phenylenediamine and $H_2O_2$. The thermal inactivation followed biphasic kinetics to have activation energy (Ea) of 48.2kcal/mol and z value of $11.2^{\circ}C$ for the heat labile fraction and Ea of 36.3kcal/mol and z value of $14.9^{\circ}C$ for the heat resistant fraction. Browning by peroxidase was completely inhibited at the concentrations of 10mM for sodium diethyldithiocarbamate and potassium metabisulfite and 1mM for L-cysteine and ascorbic acid.

• Journal of Energy Engineering
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• v.27 no.2
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• pp.55-60
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• 2018

In this study investigated the Controlled Low Strength Materials using coal ash and steel slag(KR slag) as the main material in the thermal power plant classified as waste resource. Bottom ash and KR slag are mixed at a ratio of 7: 3 to expand the use of industrial by-products through carbonate($CO_2$-fixation) reactions and inhibit the exudation of heavy metals. The results showed that the water content increased as the content of bottom ash increased. It was confirmed that as the powder content increased, the bleeding ratio decreased. Also, as the content of one kind of ordinary portland cement (OPC) decreased, activation of hydration reaction decreased and compressive strength decreased. However, when the mixed composition is appropriately adjusted, the compressive strength of 2.0 MPa required for the controlled low-strength material can be satisfied.

• Korean Journal of Food Science and Technology
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• v.10 no.2
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• pp.209-214
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• 1978

Naringinase produced from Aspergillus nidulans was immobilized in acrylamide gel by the entrapping method and its characteristics were studied. Optimum acrylamide concentration was 10%, but N.N'-methylene bisacrylamide concentration had no influence on the final enzyme gel activity. The suitable amount of enzyme dissolved in the polymerization reaction mixture was 126 units/ml. Optimum pH of immobilized enzyme was 5.0 which was the same as that of free enzyme. However, immobilized enzyme showed a higher optumum reaction temperature, markedly increased pH and temperature stability. In a packed-column reactor, the observed reaction rate was increased proportionally to flow rate up to 5ml/min., but independent above 6ml/min.. Activation energy of the immobilized enzyme was 13.01 Kcal/mole, and the energy required for the thermal inactivation was 39.4 Kcal/mole. The apparent Km for 100 mesh gel was $7.23{\times}10^{-3}$ mole.

• Journal of the Korean Applied Science and Technology
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• v.20 no.3
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• pp.212-220
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• 2003

Electrical properties of carbon filler/PVdF [poly(vinylidene fluoride)] composite were investigated as a funtion of carbon filler/PVdF ratio in the range of 0.2${\sim}$0.5. Three kinds of comercialzied conductive carbon blacks such as Hiblack 41Y, KE300J, and KE600J, and carbon nanofibers prepared by the catalytic chemical vapor deposition of $C_2H_4$ over Ni-Cu catalysts were used as the carbon fillers. The electrical conductivity of carbon filler/PVdF composites were in the range of 0.65 to 13.5 S/cm depending the fillers' electrical conductivity ranging from 5.6 to 23.1 S/cm. Among the carbon fillers used, the KE600J carbon black showed the highest conductivity both in the composite and filler itself because of its high degree of graphitization due to the high-temperature thermal treatment and its high surface area due to the activation treatment.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1125-1129
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• 2008

Polypropylene (PP)/corn starch master batch(starch-MB) blends with different PP compositions of 90, 80, 70, and 60 wt% were prepared by melt compounding at $200^{\circ}C$, using lab scale Brabender mixer. The chemical structures, thermal properties and non-isothermal crystallization behavior of the PP/starch-MB blends were investigated by FT-infrared spectrometry (FT-IR), differential scanning calorimetry (DSC), and thermogravimetric analyzer (TGA). The fabrication of the PP/starch-MB blend was confirmed by the existence of hydroxy group in FT-IR spectrum. There was no district change in melting temperature and melting enthalpy, and TGA curve indicates a decrease in degradation temperature with starch-MB content. The non-isothermal crystallization process was analyzed using by Avrami equation. The Avrami exponents were in the range of 2.71-3.97 for PP and 1.48-1.99 for PP/starch-MB blonds. The activation energies calculated by Kissinger method were 233 kJ/mol for PP, 484 kJ/mol for PP90, 541 kJ/mol for PP80, 553 kJ/mol for PP70, and 422 kJ/mol for PP60.

• Carbon letters
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• v.12 no.4
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• pp.207-217
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• 2011

We discuss the influence of few-walled carbon nanotubes (FWCNTs) treated with nitric acid and/or sulfuric acid on field emission characteristics. FWCNTs/tetraethyl orthosilicate (TEOS) thin film field emitters were fabricated by a spray method using FWCNTs/TEOS sol one-component solution onto indium tin oxide (ITO) glass. After thermal curing, they were found tightly adhered to the ITO glass, and after an activation process by a taping method, numerous FWCNTs were aligned preferentially in the vertical direction. Pristine FWCNT/TEOS-based field emitters revealed higher current density, lower turn-on field, and a higher field enhancement factor than the oxidized FWCNTs-based field emitters. However, the unstable dispersion of pristine FWCNT in TEOS/N,N-dimethylformamide solution was not applicable to the field emitter fabrication using a spray method. Although the field emitter of nitric acid-treated FWCNT showed slightly lower field emission characteristics, this could be improved by the introduction of metal nanoparticles or resistive layer coating. Thus, we can conclude that our spray method using nitric acid-treated FWCNT could be useful for fabricating a field emitter and offers several advantages compared to previously reported techniques such as chemical vapor deposition and screen printing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.