• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.443-450
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• 1998

Layered double hydroxides(LDHs) [{{{{ {Mg }_{1-x } }}{{{{ {Al }_{x } }}({{{{ {OH}_{2 } }})]ζ+({{{{ {CO }`_{3 } ^{2- } ){ }_{x/2 } }}$.${{{{ { yH}_{2 }O }} wioth variation of layer charge densitywere synthesized by co-precipitation methdo since their charge densities have a very important role to be det-ermined the physicochemical properties of layered materials. The XRD IR and thermal studies of them were discussed and the kinetic study for the decarbonation reaction was also carried out. From the results of XRD analysis we found that the lattice parameter and the unit cell volume were linearly decreased with the amount of Al substituents(x) in the vicinity of x=2∼10${\times}$1/3${\times}$10-1 but they had nearly constant values when the x are far from these vicinit. The activation energies for the decarbonation reaction of x=6.8, 10${\times}$1/3${\times}${{{{ { 10}^{-1 } }} were estimated to be 47.0, 37.6, 39.3 kcal/mol The specific surface areas(90-120 m2/g) of stable hy-drotalcite-type LDHs were dractically decreased with increasing of layer charge density.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.583-589
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• 2016

In this study, recrystallization behaviors in the two-phase (${\alpha}+{\gamma}$) region of micro-alloyed steels such as Base, Nb, TiNbV and CAlN were investigated in terms of flow stress, microstructure and associated grain boundary characteristics. The flow stress of all specimens reached peak stress and gradually decreased, which means that recrystallization or recovery of proeutectoid deformed ferrite and recovery or transformation to ferrite of deformed austenite occurred by thermal activation. The precipitation of carbide or nitride via the addition of micro-alloying elements, because it reduced prior austenite grain size upon austenitization, promoted transformation of austenite to ferrite and increased flow stress. The strain-induced precipitation under deformation in the two-phase region, on the other hand, increased the flow stress when the micro-alloying elements were dissolved during austenitization. The recrystallization of the Nb specimen was more effectively retarded than that of the TiNbV specimen during deformation in the two-phase region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.38-40
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• 1988

This paper was a study on dielectic characteristics of polypropylen film which were annealled in air and qunched in nitorgen after aging for 5[Hr]. Dielectric characteristics of specimen were measured in temperature of the range of 15-120[$^{\circ}C$], and in frequency of the range of $30-1{\times}10^6$[Hz.] As the result, for dielectric relaxation $\beta$-peak was observed in 20[$^{\circ}C$], and $\alpha$-peak was observed in 90[$^{\circ}C$]. Also, it was explained that $\alpha$-peak attributed due to armorphous region and $\beta$-peak attributed due to crystalline region and activation energy from dielectric loss spectra was obtained 34.5[kcal/mole] for $\alpha$-peak and 80.5[Kcal/mole] for $\beta$-peak, respectively.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.32-41
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• 1994

In this study, the TSC spectroscopy has been applied to investigate the influence of structural change due to a process of curing reaction on the electrical properties of epoxy composites cured with acid-anhydride. Five TSC peaks appeared in -160-250[.deg.C]: in the low temperature region below glass transition temperature(T$\_$g/), three relaxation mode peaks due to action of side chains, substitution group or terminal groups have been observed, a peak associated with T$\_$g/, appeared in 110[.deg. C] and p peak due to ionic space charges located in 150[.deg.C]. Each peak was separated into elementary peaks by the partial polarization procedure, and the distribution of activation energy and relaxation time were analized to clearify the origin of each peak. Also, overaboundantly added hardener separated a .betha. peak near 10[.deg. C] into two peaks of .betha.$\_$1/(10.deg. C) and .betha.$\_$2/(20.deg. C) according to increasement of forming field, and the separated hardener was oxidated thermally with increasing surrounding temperatures. The expansion of the free volume need in molecular motion and the reduction of the structural packing density through thermal oxidation process increased TSC between .alpha. peak and .betha. peak and decreased T$\_$g/.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.195-198
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• 1990

In order to investigate the radiation effects induced to electrical properties of Biaxially-Oriented Polypropylen film, several observations were carried out to the sample irradiated to various dose by $Co^{60}-{\gamma}$ ray, on the characteristics of TSC spectra measuered as a function of electric field applied to a sample of 15[ ${\mu}m$] thick. The TSC spectra observed in the temperature range of $153{\sim}403[K]$ with the electric field of intensity $10{\sim}60$ [MV/m], have shown two of the distinguished peak such as ${\beta}$, ${\alpha}$, each of which appeared at $-5{\sim}20$ [ $^{\circ}C$] and 90 [ $^{\circ}C$] respectively. As the conclusions, obtained from the studies, the origin of ${\alpha}$ peak in TSC seems to be attributed by thermal excitation of ions trapped with $0.4{\sim}0.8[eV]$ deep, at the defects formed by $Co^{60}-{\gamma}$ irradiation in a crystaline region. The origin of ${\beta}$ peak was regarded as the depolarization process of "OH" or "CO" dipole with the activation energy of $0.4{\sim}0.6[eV]$ in an amorphous region.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.257-261
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• 2015

We report on GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) that can cover the spectral range of $3.6-25{\mu}m$. One advantage of the GaAs QWIPs is the wavelength tenability as a function of their structural parameters. We have performed a systematic calculation on the detection wavelength of a typical $GaAs/Al_xGa_{1-x}As$ multi-quantum-well photodetector, with the aluminum mole fraction (x) of $Al_xGa_{1-x}As$ barrier in the range of 0.15-0.43 and the quantum-well width range from 30 to 60 $60{\AA}$. Design and fabrication of a QWIP based on $GaAs/Al_{0.23}Ga_{0.77}As$ structure with $37{\AA}$-thick well width has been carried out. The calculated operation wavelength of the QWIP is in a good agreement with the experimental data taken by photo response and activation energy calculation from thermal quenching of integrated photoluminescence.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.114-114
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• 2000

III-nitride 게 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 경우 낮은 저항의 ohmic contact은 필수적이다. p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도(>1018cm-3)의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV 이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 10-2$\Omega$cm2이상의 높은 값을 갖게 만들고 있으며 이에 대한 해결방안으로는 고온의 열처리를 통하여 p-GaN와 금속사이에서 화학적 반응을 일으킴으로써 표면근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechaism을 이용하는 것이다. 이에 본 연구에서는 MOCVD로 성장된 p-GaN 박막을 Mg의 activation을 증가시키기 위해 N2 분위기에서 4분간 80$0^{\circ}C$에서 RTA로 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/ZSi/Ni/Au를 ohmic metal로 하여 contact한 후에 $700^{\circ}C$에서 1분간 rapid thermal annealing (RTA) 처리를 했다. contact resistance를 계산하기 위해 circular-TLM method를 이용하여 I-V 특성을 조사하였고, interface interaction을 알아보기 위해 SEM과 EDX, 그리고 XRD로 분석하였다. 또한 추가적으로 Si 계열의 compound metal인 PdSi와 PtSi에 대한 I-V 특성도 조사하여 비교하여 보았다.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.39 no.4
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• pp.291-297
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• 2003

Al-brass is usually used as the tube material of vessel's heat exchanger for seawater cooling system because it has high thermal conductivity and good mechanical properties and high corrosion resistance due to cuprous oxide (Cu20) layer against seawater. However, Al-brass tubes of heat exchanger for vessel at the actual environment is reported that local corrosion such as stress corrosion cracking occurred by synergism effect between mechanical factor and corrosion environment In this paper, the effect of corrosion environment on the stress corrosion cracking of Al-brass in various NH4OH of 3.5% NaCl solution, under flow by constant displacement tester. Based on the test results, the behavior of polarization, stress corrosion crack propagation and dezincification phenomenon of Al-brass are investigated. The main results are as follows：(1) Increasing range of potential from open circuit potential to repassivation gets lower, as the contain rate of NH4OH gets higher. (2) As contain rate of NH4OH gets higher, SCC of Al-brass is become activation but the protection film(Cu20) of Al-brass is created in 3.5% NaCl solution. (3) According as content of NH4OH increases in 3.5% NaCl solution, the dezincifiction area is spread. It is concluded that dezincification occurred by localized preferential anodic dissolution at stress focusing region.

• Journal of Life Science
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• v.6 no.3
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• pp.198-203
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• 1996

A thermolabile alkaline phosphatase has been purified through steps of osmotic shock, ammonium sulfate salting-out, and DAEA-cellulose chromatography from the cultured broth of the marine Vibrio sp. M-96 strain. The optimal temperature for the enzyme activity was 35$\circ$C. The optimal pH was pH11.0, and the range of pHstability was pH10.4 to 12.0. Thermal inactivation occured within 6 mintes at 60$\circ$C. The enzyme was considerably inactivated by 0.1mM concentrations of Hg$^{2+}$, Ni$^{2+}$ and Zn$^{2+}$, whereas activated up to 234% by 1mM of Mn$^{2+}$. The activation energy and deactivation energy by the Arrhenius equation were 4.02 Kcal/mol and 9.098 Kcal/mol, respectively. The Km and Vmax values of the enzyme for p-introphenylphosphate were found to be 0.0465mM and 0.001334mM/min, respectively. Active form of the enzyme had a molecular weight of 57,000 dalton determined by the Sephadex G-200 gel filtration method.