• 한국생산제조학회지
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• 제26권2호
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• pp.158-165
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• 2017

This study investigated spraying factors applicable to stripper usage. Cyclodextrine, as environment-friendly material, was included in the stripper composition. An efficient spray technology was applied for the Photoresist strip. For industrial applications, stripping requires a temperature below $50^{\circ}C$, a strip time within 50 s, and chemically stable activation. Spraying factors were organized considering many conditions-orifice diameter, working pressure (inlet speed), spray distance, and spray angle. For commercial practicability, the flow rate was limited to 3 L/min. The nozzle parameters were nozzle orifice diameter of 1.8-2.2 mm, spray distance of 40-60 mm, and injection speed of 0.7-1.2 m/s. Through the thermal spray movement of the fluid, the thermal boundary layer for a chemical reaction just above the ITO-glass surface and momentum region for sufficient agitation (above 4 m/s) was achieved.

• 한국식품과학회지
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• 제25권5호
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• pp.565-570
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• 1993

가공 과정 중 갈변에 관여하는 돼지감자의 peroxidase가 ammonium sulfate, DEAE-cellulose column, Sephacryl S-200 column chromatography에 의하여 36.65배로 정제되었다. 이 효소는 p-phenylenediamine을 기질로 사용하였을 때 pH5.0가 활성 최적 pH이었으며 pH $5.0{\sim}6.0$의 범위에서 비교적 안정하였다. 열 불활성화 곡선은 1차 곡선에서 벗어났고 60, 70, $80^{\circ}C$에서의 D값은 각각 86, 45, 33초이었으며 활성화에너지는 4,111 J/mole이었다. 이 효소의 기질특이성은 amine류 중에서 p-phenylenediamine과 가장 친화력이 좋았고 potassium cyanate, sodium diethyldithiocarbamate, L-ascorbic acid, sodium hydrosulfite, L-cysteine에 의해 활성이 완전히 억제되었으며 $Ca^{2+},\;Cu^{2+}$에 의해서는 활성이 촉진되었다.

• 한국식품영양학회지
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• 제20권2호
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• pp.120-124
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• 2007

천연 항산화제로 사용되는 토코페롤은 가열 온도가 높을수록, 가열 시간이 길수록 토코페롤의 분해율이 증가하였으며, 무산소 가열의 경우, 토코페롤은 산소가 있을 때 보다 덜 분해되었다. 알파-, 감마-. 델타- 토코페롤의 무산소 가열 조건을 만들기 위하여 $100{\sim}250^{\circ}C$에서 5${\sim}$60분 가열하는 동안 회화로 속으로 질소를 계속 흘려보내는 실험 방법을 사용하였다. 헥산으로 추출한 토코페롤은 두 종류의 용출 용매와 역상 ${\mu}$-Bondapak C$_{18}$-컬럼을 사용한 HPLC로 분리하였고 토코페롤의 분해 패턴과 잔존량을 조사하였다. 토코페롤의 열분해 키네틱스는 온도와 시간의 함수로 분석되었고 열분해 패턴은 1차 반응으로 나타났다. 무산소 가열시 알파-, 감마-, 델타-토코페롤의 열분해 활성화 에너지는 각각 3.47, 5.85 그리고 6.76 kcal/mole 이었다.

• Progress in Superconductivity
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• 제3권1호
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• pp.23-27
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• 2001

We have investigated the mixed-state magnetoresistance of high quality c-axis-oriented MgB2 thin film for magnetic field from 0.5 T to 5.0 T, applied normal to ab-plane. The temperature dependence of magnetoresistance was well described by vortex glass and fluctuation theories for different temperature regimes. We observed glassy exponent of v(z-1)~3 and upper critical field of $H_{c2}$(0)~35 T, which is consistent with previous data obtained from direct $H_{c2}$(0) measurements. Interestingly, the thermally activated flux flow region was observed to be very narrow, suggesting that the pinning strength of this compound is very strong. This finding is closely related to the recent reports that the bulk pinning is dominant in $MgB_2$and the critical current density of $MgB_2$ thin film is very high, comparable to that of cuprate superconductor. The present results further suggest that $MgB_2$is beneficial to technical applications.ons.

• 에너지공학
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• 제20권4호
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• pp.346-352
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• 2011

본 연구의 목적은 한국화력발전소에서 사용되는 석탄의 촤 산화반응율을 연구하는 것이다. 석탄촤 산화반응율은 입자의 점화온도에 근거한 Semenov의 열착화이론을 활용하여 도출하였다. 석탄촤의 입자를 열전대를 통해 직접 가열 및 온도 측정을 할 수 있으며, 광각기 센서를 통해 석탄촤점화시 발생되는 빛의 강도를 계측함으로써 점화시점을 결정 할 수 있는 실험장치를 제안 하였다. 아역청탄인 Wira와 역청탄인 Yakutugol의 석탄촤 점화온도는 입자 직경의 변화에 따라 측정을했으며, 입자의 직경이 커질수록 석탄촤 점화온도는 상승하였다. 입자 직경에 따른 석탄촤 점화온도의 결과를 통해 활성화에너지 및 빈도인자를 도출하였다. 본 연구를 통해 도출한 석탄촤 산화반응율 값을 기존의 연구 데이터와 비교한 결과 유사함도 확인할 수 있었다.

• Journal of Microbiology and Biotechnology
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• 제22권6호
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• pp.818-825
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• 2012

Keratinases are exciting keratin-degrading enzymes; however, there have been relatively few studies on their immobilization. A keratinolytic protease from Chryseobacterium sp. kr6 was purified and its partial sequence determined using mass spectrometry. No significant homology to other microbial peptides in the NCBI database was observed. Certain parameters for immobilization of the purified keratinase on chitosan beads were investigated. The production of the chitosan beads was optimized using factorial design and surface response techniques. The optimum chitosan bead production for protease immobilization was a 20 g/l chitosan solution in acetic acid [1.5% (v/v)], glutaraldehyde ranging from 34 g to 56 g/l, and an activation time between 6 and 10 h. Under these conditions, above 80% of the enzyme was immobilized on the support. The behavior of the keratinase loading on the chitosan beads surface was well described using the Langmuir model. The maximum capacity of the support ($q_m$) and dissociation constant ($K_d$) were estimated as 58.8 U/g and 0.245 U/ml, respectively. The thermal stability of the immobilized enzyme was also improved around 2-fold, when compared with that of the free enzyme, after 30 min at $65^{\circ}C$. In addition, the activity of the immobilized enzyme remained at 63.4% after it was reused five times. Thus, the immobilized enzyme exhibited an improved thermal stability and remained active after several uses.

• Environmental Engineering Research
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• 제11권4호
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• pp.217-231
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• 2006

The gas-phase formation of polychlorinated naphthalenes (PCNs) and dibenzofurans (PCDFs) was experimentally investigated by slow combustion of the three chlorophenols (CPs): 2-chlorophenol (2-CP), 3-chlorophenol (3-CP) and 4-chlorophenol (4-CP), in a laminar flow reactor over the range of 550 to $750^{\circ}C$ under oxidative condition. Contrary to the a priori hypothesis, different distributions of PCN isomers were produced from each CP. To explain the distributions of polychlorinated dibenzofuran (PCDF) and PCN congeners, a pathway is proposed that builds on published mechanisms of PCDF formation from chlorinated phenols and naphthalene formation from dihydrofulvalene. This pathway involves phenoxy radical coupling at unsubstituted ortho-carbon sites followed by CO elimination to produce dichloro-9, 10-dihydrofulvalene intermediates. Naphthalene products are formed by loss of H and/or Cl atoms and rearrangement. The degree of chlorination of naphthalene and dibenzofuran products decreased as temperature increased, and, on average, the naphthalene congeners were less chlorinated than the dibenzofuran congeners. PCDF isomers were found to be weakly dependent to temperature, suggesting that phenoxy radical coupling is a low activation energy process. Different PCN isomers, on the other hand, are formed by alternative fusion routes from the same phenoxy radical coupling intermediate. PCN isomer distributions were found to be more temperature sensitive, with selectivity to particular isomers decreasing with increasing temperature.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• 한국수소및신에너지학회논문집
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• 제29권3호
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• pp.251-259
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• 2018

Metal hydride based hydrogen storage under moderate temperature and pressure gives the safety advantage over the gas and liquid storage methods. Still solid-state hydrogen storage including metal hydride is below the DOE target level for automotive applications, but it can be adapted to stationary or miliary application reasonably. In order to develop a modular solid state hydrogen storage system that can be applied to a distributed power supply system composed of renewable energy - water electrolysis - fuel cell, the heat transfer and hydrogen storage characteristics of the metal hydride necessary for the module system design were investigated using AB5 type metal hydride, LCN2 ($La_{0.9}Ce_{0.1}Ni_5$). The planetary high energy mill (PHEM) treatment of LCN2 confirmed the initial hydrogen storage activation and hydrogen storage capacity through surface modification of LCN2 material. Expanded natural graphite (ENG) addition to LCN2, and compression molding at 500 atm improved the thermal conductivity of the solid hydrogen storage material.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.53-54
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• 2006

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.