• Economic and Environmental Geology
• /
• v.45 no.2
• /
• pp.71-78
• /
• 2012

Illite-smectite mixed layers (I-S) occurring authigenically in diagenetic and hydrothermal environments reacts toward more illite-rich phases as temperature and potassium ion concentration increase. For that reason, I-S is often used as geothermometry and/or geochronometry at the field of hydrocarbons or ore minerals exploration. Generally, I-S shows X-ray powder diffraction (XRD) patterns of ultra-thin lamellar structures, which consist of restricted numbers of sillicate layers (normally, 5 ~ 15 layers) stacked in parallel to a-b planes. This ultra-thinness is known to decrease I-S expandability (%S) rather than theoretically expected one (short-stacking effect). We attempt here to quantify the short stacking effect of I-S using the difference of two types of expandability: one type is a maximum expandability ($%S_{Max}$) of infinite stacks of fundamental particles (physically inseparable smallest units), and the other type is an expandability of finite particle stacks normally measured using X-ray powder diffraction (XRD) ($%S_{XRD}$). Eleven I-S samples from the Geumseongsan volcanic complex, Uiseong, Gyeongbuk, have been analyzed for measuring $%S_{XRD}$ and average coherent scattering thickness (CST) after size separation under 1 ${\mu}m$. Average fundamental particle thickness ($N_f$) and $%S_{Max}$ have been determined from $%S_{XRD}$ and CST using inter-parameter relationships of I-S layer structures. The discrepancy between $%S_{Max}$ and $%S_{XRD}$ (${\Delta}%S$) suggests that the maximum short-stacking effect happens approximately at 20 $%S_{XRD}$, of which point represents I-S layer structures consisting of ca. average 3-layered fundamental particles ($N_f{\approx}3$). As a result of inferring the $%S_{XRD}$ range of each Reichweite using the $%S_{XRD}$ vs. $N_f$ diagram of Kang et al. (2002), we can confirms that the fundamental particle thickness is a determinant factor for I-S Reichweite, and also that the short-stacking effect shifts the $%S_{XRD}$ range of each Reichweite toward smaller $%S_{XRD}$ values than those that can be theoretically prospected using junction probability.

• Progress in Superconductivity and Cryogenics
• /
• v.11 no.3
• /
• pp.15-19
• /
• 2009

Recently, it is proposed to make striations on the YBCO coated conductor and to transpose each other as one of the solutions to decrease the perpendicular magnetization loss. For large power application using HTS, the stacked conductor packing the YBCO coated conductors should be used because single conductor is limited in flowing of demanded large current. In this paper, we research the affect of the striation and continuously transposed stacking geometry on the magnetization loss in perpendicularly exposed magnetic field. Several short samples having different number of striation and continuously transposed stack are prepared and tested in perpendicularly exposed magnetic field for the magnetization loss characteristics. The magnetization loss of striated sample was lower than sample without striation. The reduction effect on magnetization loss by the striation is obviously appeared in higher field and lower number of stack and decreased as increasing the transposed stacking number. Also, the reduction effect by transposed stack is obviously appeared in lower field at lower number of striation and isn't appeared at higher striation number and higher magnetic field.

• Structural Engineering and Mechanics
• /
• v.51 no.1
• /
• pp.111-130
• /
• 2014

The aim of this study is to investigate the effects of the beam aspect ratio(L/h), hole diameter, hole location and stacking layer sequence ($[0/45/-45/90]_s$, $[45/0/-45/90]_s$ and $[90/45/-45/0]_s$) on natural frequencies of glass/epoxy perforated beams under room and high (40, 60, 80, and $100^{\circ}C$) temperatures for the common clamped-free boundary conditions (cantilever beam). The first three out of plane bending free vibration of symmetric laminated beams is studied by Timoshenko's first order shear deformation theory. For the numerical analyses, ANSYS 13.0 software package is utilized. The results show that the hole diameter, stacking layer sequence and hole location have important effect especially on the second and third mode natural frequency values for the short beams and the high temperatures affects the natural frequency values significantly. The results are presented in tabular and graphical form.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.98-100
• /
• 2008

A series of new channel materials using triisopropylsilylethynyl anthracene(TIPSAN) derivatives are synthesized by well known reaction. The TIPSAN derivatives exhibit an excellent field-effect mobility with hole mobility as high as 0.1 cm2V-1s-1 by solution-process and slip stack structure of core and end groups with short $\pi-\pi$ stacking distance of $3.525{\sim}3.485\;{\AA}$ by single crystal structures.

• Electronics and Telecommunications Trends
• /
• v.38 no.6
• /
• pp.52-61
• /
• 2023

With semiconductor scaling approaching the physical limits, devices including CMOS (complementary metal-oxide-semiconductor) components have managed to overcome yet are currently struggling with several technical issues like short-channel effects. Evolving from the process node of 22 nm with FinFET (fin field effect transistor), state-of-the-art semiconductor technology has reached the 3 nm node with the GAA-FET (gate-all-around FET), which appropriately addresses the main issues of power, performance, and cost. Technical problems remain regarding the foundry of GAA-FET, and next-generation devices called post-GAA transistors have not yet been devised, except for the CFET (complementary FET). We introduce a CFET that spatially stacks p- and n-channel FETs on the same footprint and describe its structure and fabrication. Technical details like stacking of nanosheets, special spacers, hetero-epitaxy, and selective recess are more thoroughly reviewed than in similar articles on CFET fabrication.

• ETRI Journal
• /
• v.44 no.3
• /
• pp.491-503
• /
• 2022

Metal-oxide-semiconductor field-effect transistors (MOSFETs) are continuously scaling down in the nanoscale region to improve the functionality of integrated circuits. The scaling down of MOSFET devices causes short-channel effects in the nanoscale region. In nanoscale region, leakage current components are increasing, resulting in substantial power dissipation. Very large-scale integration designers are constantly exploring different effective methods of mitigating the power dissipation. In this study, a transistor-level input-controlled stacking (ICS) approach is proposed for minimizing significant power dissipation. A low-power ICS approach is extensively discussed to verify its importance in low-power applications. Circuit reliability is monitored for process and voltage and temperature variations. The ICS approach is designed and simulated using Cadence's tools and compared with existing low-power and high-speed techniques at a 22-nm technology node. The ICS approach decreases power dissipation by 84.95% at a cost of 5.89 times increase in propagation delay, and improves energy dissipation reliability by 82.54% compared with conventional circuit for a ring oscillator comprising 5-inverters.

• Korean Journal of Metals and Materials
• /
• v.50 no.2
• /
• pp.152-158
• /
• 2012

The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.18 no.11
• /
• pp.762-769
• /
• 2017

The extensional stiffness in quasi-isotropic laminates is uniform in the radial direction, but the bending stiffness varies radially due to the stacking sequence. This paper addresses the directional dependency of the bending stiffness and its radial variation in three types of quasi-isotropic laminate reflectors consisting of unidirectional fiber composite materials (UDM) and randomly distributed composite materials (short fiber, RDM). The extensional stiffness and bending stiffness in optical reflectors using RDM are uniform, while the bending stiffness in those using UDM varies radially from 11% to 26%. Also, the stiffness sensitivity, such as the bend-twist or bend-torsion effect, due to the differences in the stiffness value in the composite, is large. These factors are problematic in the optical field requiring precision surfaces. Utilizing RDM might be one way to eliminate the presence of bending stiffness in composite mirror substrates.

• Electronics and Telecommunications Trends
• /
• v.36 no.3
• /
• pp.12-22
• /
• 2021

Since the technical realization of self-aligned planar complementary metal-oxide-semiconductor field-effect transistors in 1960s, semiconductor manufacturing has aggressively pursued scaling that fruitfully resulted in tremendous advancement in device performances and realization of features sizes smaller than 10 nm. Due to many intrinsic material and technical obstacles, continuing the scaling progress of semiconductor devices has become increasingly arduous. As an effort to circumvent the areal limit, stacking devices in a three-dimensional fashion has been suggested. This approach is commonly called monolithic three-dimensional (M3D) integration. In this work, we examined technical issues that need to be addressed and overcome to fully realize energy efficiency, short latency and cost competency. Full-fledged M3D technologies are expected to contribute to various new fields of artificial intelligence, autonomous gadgets and unknowns, which are to be discovered.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.6
• /
• pp.17-20
• /
• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.