• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• Macromolecular Research
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• v.11 no.6
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• pp.425-430
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• 2003

Two types of poly(n-butyl acrylate) copolymer/silicate nanocomposites have been produced: poly(n-butyl acrylate-co-methyl methacrylate) [P(BA-co-MMA)]/silicate nanocomposites and poly(n-butyl acrylate-co-styrene) [P(BA-co-ST)]/silicate nanocomposites. The P(BA-co-MMA)/silicate nanocomposites shows the exfoliated structures but a P(BA-co-ST)/silicate nanocomposites have intercalated structures, because the BA/MMA comonomer has a higher polarity (e-value in Q-e scheme) than the BA/ST comonomer. The BA/MMA comonomer expanded the interlayer space of the silicate wider than did the BA/ST comonomer. The thermal degradation onset point of the P(BA-co-MMA)/silicate nanocomposites was 43$^{\circ}C$ higher than that of pure P(BA-co-MMA). P(BA-co-MMA)T5%, P(BA-co-MMA)T10%, and P(BA-co-MMA)T20% exhibit 134,302, and 195% increases, respectively, in their storage moduli at -20$^{\circ}C$ relative to the pure copolymer.

• 기술발표회
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• s.2006
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• pp.303-310
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• 2006

This study researched N-Value, strength of clayey soil and preconsolidation pressure m order to variety application of standard Penetration test. We compared it makes on analysis of the relationship of the N-value and $q_u$ with relation formula is presented in existing, presented the estimated preconsolidation pressure by using the predicted undrained shear strength.

• Proceedings of the KSR Conference
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• 2002.05a
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• pp.295-300
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• 2002

In this research problems of recent design methods and their improvement for SIP in domestic areas were studied by using the characteristics of load-settlement curves and bearing capacity from field loading tests. Elastic and plastic settlement for total settlement in each loading step conducted domestic areas had a tendency. From these tendency and bearing capacity determined by loading tests we can ascertain that empirical chart can be assistant tool in SIP design. It showes that SIP design using N-value in domestic area with soil condition of grarute type results in very conservative bearing capacity, to be opposed in soil with unprofitable geological condition the design can be insecure. Also, we can ascertain that Meyerhof's bearing capacity used modified N-value on tip part of pile is more applicable than recent design method where tip bearing capacity is 20NAp N-value limited to 50. These results show that modified design method can he more economic than before because of using pile's bearing capacity to tolerable load of pile material.

• Journal of the Korean Geosynthetics Society
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• v.18 no.4
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• pp.167-180
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• 2019

Friction piles are being constructed in Southeast Asia (Myanmar, Cambodia, Vietnam, etc.) where the soft ground is deep, and many cases of friction piles are accumulated in terms of experience. In this study, we used the results of four static load test and load transfer test conducted in Myanmar sites to analyze the skin friction of soil layer. In addition, we proposed a relationship chart with skin friction measured in the N-value of Standard Penetration Test (SPT) and the load transfer test result of the single drilled shaft. In the case of Myanmar sites, the range of soil layers was deeper than domestic sites, so the conventional formula of skin friction using the N-value of SPT is different from domestic sites. In sandy layer, fs = 0.096 N in Myanmar sites showed a similar result of the domestic fs = 0.106 N. In clayey layer, fs = 0.315 N, in Myanmar sites showed about 5.0 times higher than the domestic fs = 0.062 N. The results of this study are based on limited data. Therefore, if we analyze the results of more load transfer tests, we can suggest a conventional formula for skin friction according to the N-value. It is expected to be used as important basic data in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.31-33
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• 1992

This paper is studies the addition effects of $La_2O_3$ on the magnetic properties of Sr ferrite. Compositions were chosen according to the formula $[SrO{\cdot}nFe_2O_3]_{100-x}(La_2O_3)_x$. where n was varied between 5.8~6.1 and x between 0~3. The composition of the best value $(BH)_{max}$=1.48MGOe was n=6(stoichiometric composition) and x=2 at $La_2O_3$ addition. This value was higher than that of ordinary isotropic strontium ferrite.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.89-93
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• 2014

In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have been investigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surface roughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as the increasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RC and the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/III ratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shaped azimuthal dependence over $360^{\circ}$ angle range was observed for all samples. At V/III ratio = 10, the difference of FWHM of a-plane GaN between $0^{\circ}$ and $90^{\circ}$ was 439 arcsec revealed as the lowest value in the 4 samples.

• East Asian mathematical journal
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• v.35 no.1
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• pp.67-75
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• 2019

We investigate the averaging value of a random sampling of a Dirichlet series with some condition using Poisson distribution. Our result is the following: Let $L(s)={\sum}^{\infty}_{n=1}{\frac{a_n}{n^s}}$ be a Dirichlet series that converges absolutely for Re(s) > 1. If $X_t$ is an increasing random sampling with Poisson distribution and there exists a number $0<{\alpha}<{\frac{1}{2}}$ such that ${\sum}_{n{\leq}u}a_n{\ll}u^{\alpha}$, then we have $${\mathbb{E}}L(1/2+iX_t)=O(t^{\alpha}{\sqrt{{\log}t}})$$, for all sufficiently large t in ${\mathbb{R}}$. As a result, we get the behaviour of $L({\frac{1}{2}}+it)$ such that L is a Dirichlet L-function or a modular L-function, when t is sampled by the Poisson distribution.

• Journal of The Korean Society of Grassland and Forage Science
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• v.4 no.2
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• pp.158-163
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• 1983

The purpose of this experiment was to find out fundamental data for the cultivation of sorghum-sudangrass hybrid. Leaf area index and dry matter accumulation were investigated with 3-levels of nitrogen application,15, 25, 35kg per 10a during the period of initial growth from the 8th leaf emergence to the late blooming stage. The results obtained were as follows: Leaf emergence increased as growth progressed and in the same pattern at all N-levels. After the heading stage, the value was 15 at all N-levels. Leaf area index (LAI) increased as growth progressed and rapidly till the booting stage. At 15kg N-level the values were larger till the ear formation stage, and at 35tg N-level the values were larger than other N-levels after the booting stage. At the late blooming stage LAI reached 8.13 at 35kg N-level. The value of dry matter accumulation was the highest at 35kg N-level at the late blooming stage, and as was the same in the value of crop growth rate (CGR). There was a tendency that before the booting stage the enlargement of leaf area contributed to dry matter accumulation and after the booting stage did the increase of net assimilation rate (NAR) .

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.283-287
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• 2002

We have studied Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate for application of interconnection metal in ULSI circuits. Zr(Si)N film was deposited with reactive DC magnetron sputtering system using $Ar/N_2$mixed gas. The value of the resistivity was the lowest for the ZrN film using 29 : 1 of Ar : $N_2$reactant gas ratio at room temperature and decreased with increasing of Si substrate temperature. As the value of ZrN film resistivity was decreased, the direction of crystal growth was toward to (002) plane. The barrier property of ZrN film added with Si was improved. But Si was added too much in ZrN film, the barrier property was degraded. The adhesive property was improved with increasing of Si in ZrN. For the analysis of the film, XRD, Optical microscopy, Scretch tester, so on were used.