• Journal of the Korean Chemical Society
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• v.40 no.7
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• pp.474-482
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• 1996

Two crystal structures of the vacuum dehydrated $Ag^+$-exchanged zeolite X have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at 21(1)$^{\circ}C$ (a=24.922(1)${\AA}$ and a=24.901(1)${\AA}$, respectively). Each crystal was ion exchanged in flowing streams of aqueous $AgNO_3$ for three days. The first crystal was dehydrated at 300$^{\circ}C$ and $2{\times}10^{-6$torr for two days. The second crystal was similarly dehydrated at 350$^{\circ}C$. Their structures were refined to the final error indices, $R_1=0.095\;and\;R_2=0.092$ with 227 reflections, and $R_1=0.096\;and\;R_2=0.087$ with 334 reflections, respectively, for which I > 3${\sigma}$(I). In the first crystal, Ag species are found at five different crystallographic sites: sixteen $Ag^+$ ions fill the site I, the center of the double 6-ring, thirty-two Ag0 atoms fill the I' site in the sodalite cavities opposite double six-rings, seventeen $Ag^+$ ions lie at the 32-fold site II' inside the sodalite cavity at the single six-oxygen ring in the supercage, fifteen Ag+ ions lie at the 32-fold site II, in the supercage, and the remaining twelve $Ag^+$ ions lie at site III' in the supercage at a little off two-fold axes. In the second crystal, all Ag species are located similarly as crystal 1; 16 at site I, 28 at site I', 16 at site II, 16 at site II', 6 at site III and 6 at site III'. Total 88 silver species were found per unit cell. The remaining four Ag atoms were migrated out of the zeolite framework to form small silver crystallites on the surface of the zeolite single crystal. In the first structure, the numbers of Ag atoms per unit cell are approximately 32.0 and these may form tetrahedral $Ag_4$ clusters at the centers of the sodalite cavities. The probable four-atom cluster is stabilized by coordination to two $Ag^+$ ions. The Ag-Ag distance in the cluster, ca. 3.05 ${\AA}$, is a little longer than 2.89 ${\AA}$, Ag-Ag distance in silver metal. At least two six-ring $Ag^+$ ions on sodalite cavity (site II') must necessarily approach this cluster and this cluster may be viewed as a distorted octahedral silver cluster, (Ag6)2+.

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1285-1292
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• 2009

Large single crystals of zeolite, |$Na_{75}$|[$Si_{117}Al_{75}O_{384}$]-FAU (Na-Y, Si/Al = 1.56), were synthesized from gels with composition of 3.58Si$O_2$ : 2.08NaAl$O_2$ : 7.59NaOH : 455$H_2$O : 5.06TEA : 2.23TCl. One of these, a colorless single-crystal was ion exchanged by allowing aqueous 0.02 M CsOH to flow past the crystal at 293 K for 3 days, followed by dehydration at 673 K and 1 ${\times}\;10^{-6}$ Torr for 2 days. The crystal structure of fully dehydrated partially $Cs^+$-exchanged zeolite Y, |$Cs_{45}Na_{30}$|[$Si_{117}Al_{75}O_{384}$]-FAU per unit cell (a = 24.9080(10) $\AA$) was determined by single-crystal X-ray diffraction technique in the cubic space group Fd $\overline{3}$ m at 294(1) K. The structure was refined using all intensities to the final error indices (using only the 877 reflections with $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.0966 (Based on F) and $R_2\;=\;0.2641\;(Based\;on\;F^2$). About forty-five $Cs^+$ ions per unit cell are found at six different crystallographic sites. The 2 $Cs^+$ ions occupied at site I, at the centers of double 6-ring (D6Rs, Cs-O = 2.774(10) $\AA$ and O-Cs-O = 88.9(3) and 91.1(3)$^o$). Two $Cs^+$ ions are found at site I’ in the sodalite cavity; the $Cs^+$ ions were recessed 2.05 $\AA$ into the sodalite cavity from their 3-oxygen plane (Cs-O = 3.05(3) $\AA$ and O-Cs-O = 77.4(13)$^o$). Site-II’ positions (opposite single 6-rings in the sodalite cage) are occupied by 7 $Cs^+$ ions, each of which extends 2.04 $\AA$ into the sodalite cage from its 3-oxygen plane (Cs-O = 3.067(11) $\AA$ and O-Cs-O = 80.1(3)$^o$). The 26 $Cs^+$ ions are nearly three-quarters filled at site II in the supercage, being recessed 2.34 $\AA$ into the supercage (Cs-O = 3.273(8) $\AA$ and O-Cs-O = 74.3(3)$^o$). The 4 $Cs^+$ ions are found at site III deep in the supercage (Cs-O = 3.321(19) and 3.08(3) $\AA$), and 4 $Cs^+$ ions at another site III’ (Cs-O = 2.87(4) and 3.38(4) $\AA$). About 30 $Na^+$ ions per unit cell are found at one crystallographic site; The $Na^+$ ions are located at site I’ in the sodalite cavity opposite double 6-rings (Na-O = 2.578(11) $\AA$ and O-Na-O = 97.8(4)$^o$).

• Journal of the Korean Chemical Society
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• v.39 no.1
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• pp.7-13
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• 1995

The crystal sructures of $X(Ca_{46}Al_{92}Si_{100}O_{384})$ and $Ca_{32}K_{28}-X(Ca_{32}K_{28}Al_{92}Si_{100}O_{384})$ dehydrated at $360^{\circ}C$ and $2{\times}10^{-6}$ Torr have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at $21(1)^{\circ}C.$ Their structures were refined to the final error indices, R_1=0.096,\;and\;R_2=0.068$ with 166 reflections, and R_1=0.078\;and\;R_2=0.056$ with 130 reflections, respectively, for which I > $3\sigma(I).$ In dehydrated $Ca_{48}-X,\;Ca^{2+}$ ions are located at two different sites opf high occupancies. Sixteen $Ca^{2+}$ ions are located at site I, the centers of the double six rings $(Ca(1)-O(3)=2.51(2)\AA$ and thirty $Ca^{2+}$ ions are located at site II, the six-membered ring faces of sodalite units in the supercage. Latter $Ca^{2+}$ ions are recessed $0.44\AA$ into the supercage from the three O(2) oxygen plane (Ca(2)-O(2)= $2.24(2)\AA$ and $O(2)-Ca(2)-O(2)=119(l)^{\circ}).$ In the structure of $Ca_{32}K_{28}-X$, all $Ca^{2+}$ ions and $K^+$ ions are located at the four different crystallographic sites: 16 $Ca^{2+}$ ions are located in the centers of the double six rings, another sixteen $Ca^{2+}$ ions and sixteen $K^+$ ions are located at the site II in the supercage. These $Ca^{2+}$ ions adn $K^+$ ions are recessed $0.56\AA$ and $1.54\AA$, respectively, into the supercage from their three O(2) oxygen planes $(Ca(2)-O(2)=2.29(2)\AA$, $O(2)-Ca(2)-O(2)=119(1)^{\circ}$, $K(1)-O(2)=2.59(2)\AA$, and $O(2)-K(1)-O(2)=99.2(8)^{\circ}).$ Twelve $K^+$ ions lie at the site III, twofold axis of edge of the four-membered ring ladders inside the supercage $(K(2)-O(4)=3.11(6)\AA$ and $O(1)-K(2)-O(1)=128(2)^{\circ}).$

• Carbon letters
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• v.10 no.3
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• pp.177-180
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• 2009

The importance of nanopore structures of carbons is shown in terms of interaction potential for various molecules including supercritical gases such as $H_2$ and $CH_4$. The key factors for adsorption of supercritical $H_2$ and $CH_4$ are shown for single wall carbon nanohorn, single wall carbon nanotube, and double wall carbon nanotube. The cluster formation of molecules is a key process for water adsorption on hydrophobic carbon nanopores. The X-ray absorption spectroscopic examination elucidates an explicit dehydration structure of ions confined in carbon nanopores.

• Journal of the Korean Chemical Society
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• v.48 no.5
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• pp.504-509
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• 2004

The reaction of Cu metal with mixed alkali metal polyselenide flux ($KNaSe_x$) produced large plate-like crystals of $KCu_4Se_3$. The structure of $KCu_4Se_3$, determined with X-ray single crystal diffraction techniques, is tetragonal (P4/mmm, a=4.013(1))${\AA}$, c=9.712(1))${\AA}$, z=1, R=6.7%). The structure is composed $[Cu_4Se_3]_n^{n-}$double layers which are made of fused anti PbO-type Cu2Se2 layers. Temperature variable resistivity measurement on single crystal of $KCu_4Se_3$ shows metallic behavior ranging from $1.8{\times}10^{-4}{\Omega}{\cdot}cm$ (at 300 K) to $1.0{\times}10^{-6}{\Omega}{\cdot}cm$ (at 20 K).

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.127-131
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• 2002

We fabricated MTJ devices that have doubly oxidized tunnel barrier using plasma oxidation method to from oxidized AlO$\sub$x/ tunnel barrier. Doubly oxidation I, which sputtered 10 ${\AA}$-bottom Al layer and oxidized it with oxidation time of 10 s. Subsequent sputtering of 13 ${\AA}$-Al was performed and the metallic layer was oxidized for 50, 80 and 120 s., respectively. Doubly oxidation II, which sputtered 10 ${\AA}$-bottom Al layer and oxidized it varying oxidation time for 30∼120 s. Subsequent sputtering of 13 ${\AA}$-Al was performed and the metallic layer was oxidized for 210 sec. Double oxidation process specimen showed MR ratio of above 27％ in all experiment range. Singly oxidation process. 13 ${\AA}$-Al layer and oxidized up to 210 s, showed less MR ratio and more narrow process window than those of doubly oxidation. Cross-sectional TEM images would that doubly oxidized barrowers were thinner and denser than singly oxidized ones. XPS characterization confirmed that doubly oxidation of Fe with bottom insulating layer. As a result, doubly oxidation could have superior MR ratio in process extent during long oxidation time because of preventing oxidation of bottom magnetic layer than singly oxidation.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.6-14
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• 1997

The crystal structures of $Sr_{31}K_{30}-X\;(Sr_{31}K_{30}Si_{100}A1_{92}O_{384};\;a=25.169(5) {\AA}$) and $Sr_{8.5}Tl_{75}-X (Sr_{8.5}Tl_{75}Si_{100}A1_{92}O_{384};\;a=25.041(5) {\AA}$) have been determined by single-crystal X-ray diffraction techniques in the cubic space group $\=F{d3}\;at\;21(1)^{\circ}C$. Each crystal was prepared by ion exchange in a flowing stream of aqueous $Sr(ClO_4)_2\;and\;(K\;or\;T1)NO_3$ whose mole ratio was 1 : 5 for five days. Vacuum dehydration was done at $360^{\circ}C$ for 2d. Their structures were refined to the final error indices $R_1=0.072\;and\;R_w=0.057$ with 293 reflections, and $R_1= 0.058\;and\;R_w=0.044$ with 351 reflections, for which $I>2{\sigma}(I)$, respectively. In dehydrated $Sr_{31}K_{30}-X,\;all\;Sr^{2+}$ ions and $K^+$ ions are located at five different crystallographic sites. Six-teen $Sr^{2+}$ ions per unit cell are at the centers of the double six-rings (site I), filling that position. The remaining 15 $Sr^{2+}$ ions and 17 $K^+$ ions fill site II in the supercage. These $Sr^{2+}$ and $K^+$ ions are recessed ca $0.45{\AA}\;and\;1.06{\AA}$ into the supercage, respectively, from the plane of three oxygens to which each is bound. ($Sr-O=2.45(1){\AA}\;and\;K-O=2.64(1){\AA}$) Eight $K^+$ ons occupy site III'($K-O=3.09(7){\AA}\;and\;3.11(10){\AA}$) and the remaining five $K^+$ ions occupy another site III'($K-O=2.88(7){\AA}\;and\;2.76(7){\AA}$). In $Sr_{8.5}Tl_{75}-X,\;Sr^{2+}\;and\;Tl^+$ ions also occupy five different crystallographic sites. About 8.5 $Sr^{2+}$ ions are at site I. Fifteen $Tl^+$ ions are at site I' in the sodalite cavities on threefold axes opposite double six-rings: each is $1.68{\AA}$ from the plane of its three oxygens ($T1-O=2.70(2){\AA}$). Together these fill the double six-rings. Another 32 $Tl^+$ ions fill site II opposite single six-rings in the supercage, each being $1.48{\AA}$ from the plane of three oxygens ($T1-O=2.70(1){\AA}$). About 18 $Tl^+$ ions occupy site III in the supercage ($T1-O=2.86(2){\AA}$), and the remaining 10 are found at site III' in the supercage ($T1-O=2.96(4){\AA}$).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.165-165
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• 2010

$1.55\;{\mu}m$ 대역의 레이저 다이오드를 제작하기 위해, InP(001) 기판에 InAlGaAs 물질을 장벽층으로 하는 InAs 양자점 구조를 분자선증착기 (MBE)를 이용하여 성장하고 구조 및 광학적 특성을 Double Crystal X-ray Diffraction (DCXRD), Atomic Force Microscopy (AFM), Photoluminescence (PL)을 이용하여 평가하였다. 일반적으로 InAlGaAs 물질은 고유한 상분리 현상 (Phase Separation)이 나타나는 특성이 있으며, 이는 양자점 성장에 중요한 요인으로 작용할 수 있다. 이러한 InAlGaAs 물질의 상분리 현상을 기판온도 ($540^{\circ}C$, $555^{\circ}C$, $570^{\circ}C$)를 비롯한 성장변수를 변화시켜 제어하고 InAs 양자점 형성에 어떠한 영향을 미치는지를 분석하였다. 540의 성장온도에서 InP(001) 기판에 격자정합한 InAlGaAs 장벽층이 성장온도를 $570^{\circ}C$로 증가시킬 경우 기판에 대하여 인장 응력 (Tensile Strain)을 받는 구조로 변화되었다. 인장응력을 받는 InAlGaAs 장벽층을 Ga Flux 양을 조절하여 격자정합한 InAlGaAs 층을 형성할 수 있었다. AFM을 통한 표면 형상 분석 결과, 서로 다른 기판온도에서 성장한 InAlGaAs 물질이 InP(001) 기판에 격자정합 조건일지라도 표면의 거칠기 (Surface Roughness)는 매우 다른 양상을 보였고 InAs 양자점 형성에 직접적으로 영향을 주었다. $570^{\circ}C$에서 성장한 InAlGaAs 위에 형성한 InAs 양자점의 가로방향 크기를 세로방향 크기로 나눈 비율이 1.03으로서, 555와 $540^{\circ}C$의 1.375 와 1.636와 비교할 때 모양 대칭성이 현저히 개선된 것을 알 수 있다. 상분리 현상이 줄어 표면 거칠기가 좋은 InAlGaAs 위에 양자점을 형성할 때 원자들의 이동도가 상대적으로 높아 InAs 양자점의 크기가 증가하고, 밀도가 감소하는 현상이 나타났다. 또한 InAlGaAs 장벽층이 InP(001) 기판을 기준으로 응력 (Compressive 또는 Tensile)이 존재하는 경우, InAs 양자점 모양이 격자정합 조건 보다 비대칭적으로 변하는 특성을 보여 주었다. 이로부터, 대칭성이 개선된 InAs 양자점 형성에 InAlGaAs 장벽층의 표면 거칠기와 응력이 중요한 변수로 작용함을 확인 할 수 있었다. PL 측정 결과, 발광파장은 $1.61\;{\mu}m$로 InAs 양자구조 형상에 따라 광강도 (Intensity), 반치폭 (Line-width broadening) 등이 변화 되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Radiation Oncology Journal
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• v.16 no.4
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• pp.497-504
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• 1998

Purpose : To evaluate the usefulness of electronic portal imaging device through objective compare of the images acquired using an EPID and a conventional port film Materials and Methods : From Apr. to Oct. 1997, a total of 150 sets of images from 20 patients who received radiation therapy in the pelvis area were evaluated in the Inha University Hospital and Severance Hospital. A dual image recording technique was devised to obtain both electronic portal images and port film images simultaneously with one treatment course. We did not perform double exposure five to ten images were acquired from each patient. All images were acquired from posteroanterior (PA) view except images from two patients. A dose rate of 100-300 Mu/min and a 10-MV X-ray beam were used and 2-10 MUs were required to produce a verification image during treatment. Kodak diagnostic film with metal/film imaging cassette which was located on the top of the EPID detector was used for the port film. The source to detector distance was 140 cm. Eight anatomical landmarks (pelvic brim, sacrum, acetabulum. iliopectineal line, symphysis, ischium, obturator foramen, sacroiliac joint) were assessed. Four radiation oncologist joined to evaluate each image. The individual landmarks in the port film or in the EPID were rated - very clear (1), clear (2), visible (3), not clear (4), not visible (5). Results : Using an video camera based EPID system. there was no difference of image quality between no enhanced EPID images and port film images. However, when we provided some change with window level for the portal image, the visibility of the sacrum and obturator foramen was improved in the portal images than in the port film images. All anatomical landmarks were more visible in the portal images than in the port film when we applied the CLAHE mode enhancement. The images acquired using an matrix ion chamber type EPID were also improved image qualify after window level adjustment. Conclusion : The quality of image acquired using an electronic portal imaging device was comparable to that of the port film. When we used the enhance mode or window level adjustment. the image quality of the EPID was superior to that of the port film. EPID may replace the port film.