• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국진공학회지
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• 제16권5호
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• pp.348-352
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• 2007

반도체 기술이 초고집적화 되어감에 따라 미세화공정에 의하여 소자의 크기가 급격히 줄어들고 있으며, 공정에서는 선폭이 크게 줄어드는 추세이다. 또한 박막을 다층으로 제조하여 소자의 집적도를 높이는 것이 중요한 이슈가 되고 있다. 이와 같은 수많은 제조 공정을 거치는 동안, Si 기판과 금속 박막사이에는 확산에 의한 많은 문제점들이 발생되고 있기 때문에, 이러한 금속과 Si 사이의 확산을 방지하는 것이 큰 이슈로 부각되어 왔다. 특히 Cu는 낮은 온도에서도 Si과 확산을 일으켜 Si 기판과 접합에서 확산에 의한 소자 failure 등이 문제로 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이를 방지하기 위하여 본 논문에서는 질소와 탄소를 첨가한 3개의 화합물로 구성된 Tungsten-Carbon-Nitrogen (W-C-N) 확산방지막을 사용하였다. 실험은 물리적 기상 증착법(PVD)으로 질소비율을 변화하며 확산방지막을 증착하였고, 이를 여러 가지 온도에서 열처리하여 열적인 안정성에 대한 실험을 실시하였다. 결정구조를 확인하기 위하여 X-ray Diffraction 분석을 통하여 확산방지막의 특성을 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.594-599
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• 2007

[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{\circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{\circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{\circ}C$ material can be conveniently described by non-molecularity$({\Delta}x=[Cu/In]-1)$ and non-stoichiometry $({\Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${\Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${\Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${\Delta}y>0$ would behave as p-type material while ${\Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$, respectively.

• 한국주조공학회지
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• 제31권3호
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• pp.130-136
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• 2011

Effects of GBF (gas bubbling filtration) treatment conditions and scrap ratio on the electric conductivity of a commercial pure aluminum for diecasting were investigated using by specific gravity and electrical conductivity measurement system, hydrogen gas analyzer, XRD, and EDS. Electrical conductivities of specimen mixed Al scrap ratio until 60% from 0% were decreased with increasing the precipitates amount and size of AlFeSi ternary intermetallic compound on the grain boundary as well as amount of porosity in the grain. On the other hand, electrical conductivities was reincreased gradually in spite of scrap ratio increase from 80% to 100%. Size of AlFeSi compound formed on the grain boundary were coarsened with the increament of scrap ratios untill 80% and GBF treatment time simultaneously.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.49-51
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• 2006

Ternary chalcopyrite $CuInS_2$ thin film material is very promising for photovoltaic. Power generation because of its excellent optical and semiconductor properties, $CuInS_2$ thin films were performed from S/In/Cu/SLG stacked elemental layer (SEL) method with post annealing treatment. $CuInS_2$ thin films were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated. Analysis of the optical energy band gap of $CuInS_2$ value of l.5eV interior and exterior.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• 분석과학
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• 제10권6호
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• pp.408-417
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• 1997

기능성 헤테로 고리 화합물의 구조 이성질체를 정상 및 역상 액체 크로마토그래피를 이용하여 분리하고, 이들 분리를 위한 최적 조건을 알코올 변형체(modifier)를 포함한 삼성분 이동상(ternary solvent system)을 이용하여 조사했다. 삼성분 이동상의 경우 알코올 변형체가 컬럼의 활성 표면에 우선적으로 상호작용하여 비활성화(deactivation)시킴으로써 용질의 머무름을 감소시키고 꼬리 끌림(tailing)을 억제하여 분리선택성이 좋아지는 것으로 보인다. 구조 이성질체 분리의 경우 정상 액체 크로마토그래피를 이용할 경우가 분리 선택성이 더 좋은 것으로 나타났다. 또한, 헤테로 고리 화합물들의 머무름 거동은 역상 액체 크로마토그래피의 경우는 시료와 정지상과의 소수성 상호작용등으로 설명할 수 있었고, 정상 액체 크로마토그래피의 경우는 시료 분자와 충진제의 흡착표면과의 흡착력으로 설명할 수 있었다.

• 한국재료학회지
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• 제9권5호
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• pp.503-508
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• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.

• Korean Chemical Engineering Research
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• 제47권4호
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• pp.403-409
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• 2009

1906년 George Oenslager에 의해 처음으로 아닐린계 유기 가황 촉진제를 발견한 이 후 현재 많은 종류의 유기 가황 촉진제가 알려져 있으며 이들 유기 가황 촉진제를 그 특성에 맞도록 병용하면 더욱 효과적이고 이것을 2종 혹은 3종을 병용하면 또 다른 효과를 나타낸다. 최근 고무 산업의 많은 분야에서 생산성 향상 및 제조환경 개선 요구에 부응하기위하여 사출 기법이 도입되고 있으며 이를 위해서 고속 가류형 고무 컴파운드의 개발이 요구되고 있다. 따라서 적절한 가류 시간 확보를 위하여 다양한 종류의 촉진제에 대한 연구, 컴파운드의 적절한 저장 안정 기간 확보에 대한 연구, pellet 형상 제조 시 자중에 의한 autoadhesion 감소에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 NR/BR compounds에 MBTS(2,2' Dithiobisbenzothiazole), TMTM(Tetramethylthiuram Monosulfide), ZDMC(Zinc dimethyldithiocarbamate), CBS(N-Cyclohexyl benzothiazolyl-2-sulfenamide), DPG(Diphenylguanidine)를 각각 병용하여 가황 고무의 가황 특성 및 기계적 물성을 비교 분석하였다. 촉진제 병용에 따른 NR/BR compounds를 평가한 결과 MBTS 1.5 phr, TMTM 0.5 phr, DPG 0.15 phr을 사용한 경우 가장 우수한 가황 특성($t_{90}$: 235 sec, $T_{max}$: 5.77 Nm)을 나타내었으며 100, 300% 모듈러스 및 인열 강도 값이 각각 2.180, 5.656 MPa, 59.58 kgf/cm으로 가장 우수한 결과를 나타내었다.