• Title/Summary/Keyword: temperature minimum layer

검색결과 141건 처리시간 0.026초

진동응답을 최소화하는 비구속형 제진보의 제진 부위 최적설계 (Optimal Treatment of Unconstrained Visco-elastic Damping Layer on Beam to Minimize Vibration Responses)

  • 이두호
    • 한국소음진동공학회논문집
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    • 제15권7호
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    • pp.829-835
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    • 2005
  • An optimization formulation of unconstrained damping treatment on beam is proposed to minimize vibration responses using a numerical search method. The fractional derivative model is combined with RUK's equivalent stiffness approach in order to represent nonlinearity of complex modulus of damping materials with frequency and temperature. Vibration responses are calculated by using the modal superposition principle, and of which design sensitivity formula with respect to damping layout is derived analytically. Plugging the sensitivity formula into optimization software, we can determine optimally damping treatment region that gives minimum forced response under a given boundary condition. A numerical example shows that the proposed method is very effective in suppressing nitration responses by means of unconstrained damping layer treatment.

유기태양전지 응용을 위한 원자층 증착 방식 제작의 알루미늄이 도핑 된 ZnO의 전기적, 구조적 특징 (Structural and Electrical Properties of Aluminum Doped ZnO Electrodes Prepared by Atomic Layer Deposition for Application in Organic Solar Cells)

  • 서인준;류상욱
    • 반도체디스플레이기술학회지
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    • 제13권2호
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    • pp.1-5
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    • 2014
  • Transparent and conducting aluminum-doped ZnO electrodes were fabricated by atomic layer deposition methods. The electrode showed the lowest resistivity of $5.73{\times}10^{-4}{\Omega}cm$ at a 2.5% cyclic layer deposition ratio of Trimethyl-aluminum and Diethyl-zinc chemicals. The electrodes showed minimum resistivity when deposited at a temperature of $225^{\circ}C$. The electrode also showed optical transmittance of about 92% at 300 nm. An organic solar cell made with a 300-nm-thick aluminum-doped ZnO electrode exhibited 2.0% power conversion efficiency.

AlN 완충층을 이용한 다결정 3C-SiC 박막의 결정성장 (Crystal growth of polyctystalline 3C-SiC thin films on AlN buffer layer)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.333-334
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    • 2007
  • This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

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Prototype 고온초전도 케이블의 최소 Quench에너지 및 대전류 특성 (A Characteristics of Large Current and Minimum Quench Energy on Prototype High-$T_c$ Superconducting Cable)

  • 김상현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 추계학술대회 논문집 학회본부 A
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    • pp.236-242
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    • 2000
  • NZP velocities were investigated on Ag sheathed multi filamentary Bi-2223 tape and direction type HTS cable. The critical current($I_c$) of Ag sheathed Bi-2223 tape and direction type HTS cable were 12 A, 63 A at 77 K, 0 T. NZP velocities of tape with two condition of DC and AC were almost same at each temperature. In case of DC, the NZP velocities of numerical analysis and experiment were almost same. NZP velocities of direction type HTS cable were 1.9-2.4 cm/sec. The result shows that the total transport current of spiral type HTS cable in $LN_2$ was 475[A], and transport current passed through almost the outer layer (2-layer). Also, AC transport losses in outer layer of HTS cable was proportion to $I^2$ and higher than losses of inner layer. And in case of $I_p=I_c$, calculated numerical loss density was concentrated on the edge of tape and most of loss density in cable was distributed outer layer more than inner layer.

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STS304 콤팩트 열교환기 고상확산접합부의 접합부 변형과 인장성질에 미치는 접합온도 및 접합압력의 영향 (Effect of Bonding Temperature and Bonding Pressure on Deformation and Tensile Properties of Diffusion Bonded Joint of STS304 Compact Heat Exchanger)

  • 전애정;윤태진;김상호;김현준;강정윤
    • Journal of Welding and Joining
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    • 제32권4호
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    • pp.46-54
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    • 2014
  • In this study, the effect of bonding temperature and bonding pressure on deformation and tensile properties of diffusion bonded joint of STS304 compact heat exchanger was investigated. The diffusion bonds were prepared at 700, 800 and $900^{\circ}C$ for 30, 60 and 90 min in pressure of 3, 5, and 7 MPa under high vacuum condition. The height deformation of joint decreased and the width deformation of joint increased with increasing bonding pressure at $900^{\circ}C$. The ratio of non-bonded layer and void observed in the joint decreased with increasing bonding temperature and bonding pressure. Three types of the fracture surface were observed after tensile test. The non-bonded layer was observed in diffusion bonded joint preformed at $700^{\circ}C$, the non-bonded layer and void were observed at $800^{\circ}C$. On the other hand, the ductile fracture occurred in diffusion bonded joint preformed at $900^{\circ}C$. Tensile load of joint bonded at $800^{\circ}C$ was proportional to length of bonded layer and tensile load of joint bonded at $900^{\circ}C$ was proportional to minimum width of pattern. The tensile strength of joint was same as base metal.

Superconducting critical temperature in FeN-based superconductor/ferromagnet bilayers

  • Hwang, T.J.;Kim, D.H.
    • 한국초전도ㆍ저온공학회논문지
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    • 제18권2호
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    • pp.5-7
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    • 2016
  • We present an experimental investigation of the superconducting transition temperatures, $T_c$, of superconductor/ferromagnet bilayers with varying the thickness of ferromagnetic layer. FeN was used for the ferromagnetic (F) layer, and NbN and Nb were used for the superconducting (S) layer. The results were obtained using three different-thickness series of the S layer of the S/F bilayers: NbN/FeN with NbN thickness, $d_{NbN}{\approx}9.3nm$ and $d_{NbN}{\approx}10nm$, and Nb/FeN with Nb thickness $d_{Nb}{\approx}15nm$. $T_c$ drops sharply with increasing thickness of the ferromagnetic layer, $d_{FeN}$, before maximal suppression of superconductivity at $d_{FeN}{\approx}6.3nm$ for $d_{NbN}{\approx}10nm$ and at $d_{FeN}{\approx}2.5nm$ for $d_{Nb}{\approx}15nm$, respectively. After shallow minimum of $T_c$, a weak $T_c$ oscillation was observed in NbN/FeN bilayers, but it was hardly observable in Nb/FeN bilayers.

보성 해안 지역에서의 해풍 특성 (Characteristics of Sea Breezes at Coastal Area in Boseong)

  • 임희정;이영희
    • 대기
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    • 제29권1호
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    • pp.41-51
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    • 2019
  • The characteristics of the sea breeze were investigated using the wind and temperature data collected from 300-m tower at Boseong from May 2014 to April 2018. Sea breeze day was detected using following criteria: 1) the presence of a clear change in wind direction near sunrise (between 1 hour after sunrise and 5 hours before sunset) and sunset (from 1500 LST to midnight), 2) presence of thermal forcing of sea breeze and 3) no heavy precipitation (rain < $10mm\;d^{-1}$). Sea breeze days occurred on 569 days for 4 years. The monthly distribution of sea breeze day occurrence shows maxima in May and September and minimum in December. The average onset and cessation times of the sea breeze are 0942 LST and 1802 LST, respectively. Although the 10-m wind shows clockwise rotation with time in the afternoon, the observed hodograph does not show an ideal elliptical shape and has different characteristics depending on the upper synoptic wind direction. Vertical structure of sea breeze shows local maximum of wind speed and local minimum of virtual potential temperature at 40 m in the afternoon for most synoptic conditions except for southeasterly synoptic wind ($60^{\circ}{\sim}150^{\circ}$) which is in the same direction as onshore flow. The local minimum of temperature is due to cold advection by sea breeze. During daytime, the intensity of inversion layer above 40 m is strongest in westerly synoptic wind ($240^{\circ}{\sim}330^{\circ}$) which is in the opposite direction to onshore flow.

부산 지역의 SO$_2$ 농도 변화 특성에 관한 고찰 (On the Characteristics of the SO$_2$ Concentration Variation in Pusan, Korea)

  • 전병일;김유근;이화운
    • 한국대기환경학회지
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    • 제10권4호
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    • pp.245-251
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    • 1994
  • We considered that characteristics of SO$_2$, concentration level and relations of the meteorological parameters and high pollution concentration from the data measured 7 air quality continuous monitoring stations during 4 years, from 1990 to 1993 in Pusan. The SO$_2$ concentration level showed decreasing trend yearly, it was maximum in Winter, minimum in Summer. The time of SO$_2$ peak concentration lagged from seashore to land because of break-down of the nocturnal inversion layer and seabreeze. Ihe correlations of daily SO$_2$, value between various air quality continuous monitoring stations were highest between Beomcheondong and Meongryundong, lowest between Daeyeondong and Sinpyeongdong because of difference of air Pollution emission sources characteristic. The meteorological parameters affecting SO$_2$ concentration level were minimum temperature, relative humidity, wind speed and air pressure. The SO$_2$ high pollution($\geq$95ppb) occurred almost in Winter, particulaly in such day showing lower wind speed and higher air pressure. Elementary SO$_2$ high Pollution Predictor were high pressure system and stability of lower atmosphere.

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HEMT소자 공정 연구 (Part II. HEMT 구조에서의 Online 접촉저항) (A Study on HEMT Device Process (Part II. Ohmic Contact Resistance in GaAs/AlGaAs Hetero-Structure))

  • 이종람;이재진;박성호;김진섭;마동성
    • 대한전자공학회논문지
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    • 제26권10호
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    • pp.1545-1553
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    • 1989
  • The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.

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분로저항이 초전도 한류기의 전류제한 효과에 미치는 영향 (Effects of a shunt resistor on current limitation performance of an SFCL)

  • 최효상;현옥배;김혜림;김상준;한병성
    • 한국초전도ㆍ저온공학회논문지
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    • 제1권2호
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    • pp.49-53
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    • 1999
  • We fabricated a resistive superconducting fault current limiter (SFCL) with a shunt resistor in order to bypass the transient current at faults. The SFCL consists of a YBCO films coated with an Au layer (10$\Omega$ at room temperature). which is to disperse the heat generated at hot spots in the YBCO films, and a 5$\Omega$ shunt resistor. The minimum quench current of the SFCL was found to be 12.2Apeak. This SFCL successfully controlled the fault current to below 23 Apeak. Which is otherwise to increase up to 103 Apeak. With the shunt resistor, the temperature of the SFCL rose the temperature of the SFCL rose three times slower than without the shunt, whereby the SFCL is protected at high currents.

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