• 조명전기설비학회논문지
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• 제29권11호
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• pp.59-65
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• 2015

By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.

• 한국세라믹학회지
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• 제46권5호
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• pp.525-527
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• 2009

This paper presents a study on the magnetic behaviour of selected doped SiAlONs with various compositions including Y, Yb, Sm, Gd, and Er. The resulting crystalline phases were confirmed by X-ray diffraction. The magnetic hysteresis data for the samples were collected at room temperature using a vibrating sample magnetometer. The study revealed that doped SiAlONs experience an appreciable level of magnetic hysteresis. Although the parameters corresponding to hysteresis loops in doped SiAlONs are less than those of common ferrites, their magnetic properties of SiAlONs may open up new potential areas of application as the host SiAlON ceramics have excellent structural properties.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.664-666
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• 2008

Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

• 설비공학논문집
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• 제19권12호
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• pp.883-888
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• 2007

As a starting point of investigating what molecular dynamic simulations can reveal about the nature of atomic level of heating and cooling process, argon described by the LJ potential is considered. Stepwise heating and cooling of constant rates are simulated in the NPT (constant number, pressure and temperature) ensemble. Hysteresis is found due to the superheating and supercooling. Drastic change of volume and energy is involved with phase change, but the melting point can not be obtained by simply observing the changes of these quantities. Since liquid and solid phases can co-exist at the same temperature, Gibbs free energy should be calculated to find the temperature where the Gibbs free energy of liquid is equal to that of the solid since the equilibrium state is the state of minimum Gibbs free energy. The obtained melting temperature, $T^*=0.685$, is close to that of the experiment with only 2% error.

• 한국해안해양공학회지
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• 제19권3호
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• pp.213-221
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• 2007

전지구적으로 지구 온난화 문제가 대두되고 있는 현 상황에서, 기온변화에 수반되는 수온변화 반응을 파악하기 위하여 해양수산부에서 제공하는 마산만 연안해역의 기온 및 수온 관측자료를 이용하여 기온과 수온의 관계를 분석하였다. 수온과 기온의 무차원 자기상관함수와 교차상관함수 변화를 분석한 결과, 지체시간 10일 이내에서는 상관계수가 0.9 이상으로 매우 크게 나타났으며, 지점별로 수온의 상관계수보다 기온의 상관계수가 크게 나타나는 것으로 파악되었다. 마산만 기온 및 수온자료를 수온상승기, 수온하강기로 구분하여 분석한 결과, 수온상승기에는 MA1 지점, MA2 지점의 기울기가 각각 0.829, 0.774로 나타났으며, 수온하강기에는 MA1 지점, MA2 지점의 기울기가 각각 1.385, 1.444로 기온상승기에 비하여 기온하강기의 기울기가 약 1.75배 정도 크게 나타나고 있으며, 명확한 이력현상으로 파악되었다. 따라서, 마산만 연안해역의 기온-수온 상관관계를 보다 정확하게 결정하기 위해서는 기온-수온의 계절적인 이력현상을 포함하여야 하며, 이 경우 기온을 이용한 수온 추정결과의 정확도가 향상되는 것으로 파악되었다.

• 센서학회지
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• 제32권4호
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• 한국초전도ㆍ저온공학회논문지
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• 제17권2호
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• pp.25-30
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• 2015

In order to realize economical applications, it is important to reduce the ac loss of 2G high-temperature superconductor coated conductors. It seems to be reasonable that a multi-filamentary wire can decrease the magnetization loss. In this study, we prepared two samples of YBCO coated conductors with striations. We measured local superconducting properties of both samples by using Low Temperature Scanning Laser and Hall Probe Microscopy (LTSLHPM). The distribution of the local critical temperature of samples was analyzed from experimental results of Low Temperature Scanning Laser Microscopy (LTSLM) near the superconducting transition temperature. According to LTSLM results, spatial distributions of the local critical temperature of both samples are homogeneous. The local current density and the local magnetization in samples were explored from measuring stray fields by using Scanning Hall Probe Microscopy (SHPM). From SHPM results, the remanent field pattern of the one bridge sample in an external magnetic field confirms the Bean's critical state model and the three bridge sample has similar remanent field pattern of the one bridge sample. The local magnetization curve in the three bridge sample was measured from external fields from -500 Oe to 500 Oe. We visualized that the distribution of local hysteresis loss are related in the distribution of the remanent field of the three bridge sample. Although the field dependence of the critical current density must be taken into account, the relation of the local hysteresis loss and the remanent field from Bean's model was useful.

• Current Applied Physics
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• 제18권11호
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• pp.1240-1247
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• 2018

Magnetic hysteresis in Ni nanowire arrays grown by electrodeposition inside the pores of anodic alumina templates is studied as a function of temperature in the range between 5 K and 300 K. Nanowires with different diameters, aspect ratios, inter-wire distance in the array and surface condition (smooth and rough) are synthesized. These microstructure parameters are linked to the different free magnetic energy contributions determining coercivity and the controlling magnetization reversal mechanisms. Coercivity increases with temperature in arrays of nanowires with rough surfaces and small diameters -33 nm and 65 nm- when measured without removing the alumina template and/or the Al substrate. For thicker wires -200 nm in diameter and relatively smooth surfaces- measured without the Al substrate, coercivity decreases as temperature rises. These temperature dependences of magnetic hysteresis are described in terms of an effective magnetic anisotropy $K_a$, resulting from the interplay of magnetocrystalline, magnetoelastic and shape anisotropies, together with the magnetostatic interaction energy density between nanowires in the array. The experimentally determined coercive fields are compared with results of micromagnetic calculations, performed considering the magnetization reversal mode acting in each studied array and microstructure parameters. A method is proposed to roughly estimate the value of $K_a$ experimentally, from the hysteresis loops measured at different temperatures. These measured values are in agreement with theoretical calculations. The observed temperature dependence of coercivity does not arise from an intrinsic property of pure Ni but from the nanowires surface roughness and the way the array is measured, with or without the alumina template and/or the aluminum support.

• 열처리공학회지
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• 제8권3호
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• pp.213-221
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• 1995

Temperature distribution, transformation and residual stresses generated during the quenching process of carbon steel. It follows many difficulties in the analytical considerations on those quenching process because of the coupling effects on temperature and metallic structures. In this paper one of the basic study on the quenching stresses was carried out for the case of the round steel bar specimen(SM45C) with 40mm both in its diameter and length. The temperature distributions considering strain hysteresis were numerically calculated by finite element technique. In calculating the transient temperature field, the heat flux between water and rod surface was determined from the heat transfer coefficient. The gradient of temperature is almost same to geometric of specimen. At early stage of the quenching process, the abrupt temperature gradient has been shown in the surface of the specimen.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.253-256
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• 2014

$Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.