• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.130-132
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• 2013

$Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/$SiO_2$/Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from $600^{\circ}C$ to $750^{\circ}C$ using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at $700^{\circ}C$ was 10.92 ${\mu}C/cm^2$. The fatigue characteristic of the BLT thin film annealed at $700^{\circ}C$ was shown change polarization up to $1.2{\times}10^9$ switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.177-185
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• 2005

Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.737-740
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.180-184
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• 2002

In this paper, the electrical properties of PVD Ta and $TaN_x$ gate electrodes on $SiO_2$ and their thermal stabilities are investigated. The results show that the work functions of $TaN_x$ gate electrode are modified by the amount of N, which is controlled by the flow rate of $N_2$during reactive sputtering process. The thermal stability of Ta and $TaN_x$ with RTO-grown $SiO_2$ gate dielectrics is examined by changes in equivalent oxide thickness (EOT), flat-band voltage ($V_{FB}$), and leakage current after post-metallization anneal at high temperature in $N_2$ambient. For a Ta gate electrode, the observed decrease in EOT and leakage current is due to the formation of a Ta-incorporated high-K layer during the high temperature annealing. Less change in EOT and leakage current is observed for $TaN_x$ gate electrode. It is also shown that the frequency dispersion and hysteresis of high frequency CV curves are improved significantly by a post-metallization anneal.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.2
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• pp.68-74
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• 2015

The low cycle fatigue (LCF) and creep-fatigue (hold time tension fatigue, HTTF) tests were performed on the modified 25Cr-13Ni cast stainless steel, which was selected as a candidate material for exhaust manifold in automotive engine. The exhaust manifold is subjected to an environment in which heating and cooling cycle occur due to the running pattern of automotive engine. Several types of fatigue behaviour such as thermal fatigue, thermal mechanical fatigue and creep-fatigue are belong to the main failure mechanisms. High temperature tensile test was firstly carried out to compare the sample with the traditional cast steel for the component. The low cycle fatigue and HTTF tests were carried out under the strain controlled condition with the total strain amplitude from ${\pm}0.6%$ to ${\pm}0.7%$ at $800^{\circ}C$. The hysteresis loops of HTTF tests showed significant stress relaxation during tension hold time. With the increase of tension hold time, the fatigue life was remarkably deceased which caused from the formation of intercrystalline crack by the creep failure mechanism.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.299-303
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• 2005

The crystal structure and ferroelectricity of the $(1-x)BiFeO_3\;(BF)-xPbTiO_3$ (PT) ceramic system with the addition of $DyFeO_3$ (DF) have been investigated for attaining a high temperature piezoelectric material. This study is focused on the relation between crystal structure and ferroelectric property with the addition of DF over the phase boundary in the (1-x)BF-xPT system. Hysteresis curves of polarization-electric field at room temperature have been measured. The X-ray and neutron diffraction data were analyzed by the rietveld refinement method. The addition of 0.1 mole DF into BF-PT system greatly increases the ferroelectric remanant polarization Pr values, e.g. 17 ${\mu}C/cm^2$ in 0.6BF-yDF-(0.4-y)PT and 31${\mu}C/cm^2$ in 0.5BF-yDF-(0.5.y)PT, respectively. The improved Pr value has been discussed in relation with crystal structure and electrical property.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1621-1623
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• 1996

The dielectric and polarizable properties of 0.85Pb$Mg_{1/3}Nb_{2/3}$)$O_3$-$0.125PbTiO_3$-$0.25BaTiO_3$ Ceramics have been investigated as a addition of the amount of $La_{2}O_{3}$($0{\leq}x{\geq}0.05$). The Temperature-dependant electrostictive characteristics of 0.85PMN-0.125PT-0.25BT relaxor ferroelectic system were improved by enhencing the extent of the diffuse phase transition(DPT). This was achieved using PMN-PT-BTceramics by the partial substitution of La at the Pb site. The curie temperature and the maximum dielectic permittivity decreased by substituting $La_{2}O_{3}$ and the electic field-related hysteresis phenomena decreased with increasing $La_{2}O_{3}$ substitution amount. It is showed decreasing in induced strain for electric field with increasing $La_{2}O_{3}$ substitution.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.18-21
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• 2003

The effect of interface bonding strength on the recovery force of SMA wire reinforced polymer matrix composites was investigated by pullout test. Firstly, the recovery forces and transformation temperatures of various prestrained SMA wires were measured and 5% prestrained SMA wires were prepared for the reinforcements of composites. EPDM incorporated with 20vol% silicon carbide particles(SiCp) of 6, 12, $60{mutextrm{m}}$ size were used as matrix. Pullout test results showed that the interface bonding strength increased when the SiCp size decreased due to the increase of elastic modulus of matrix. Cyclic test of composites was performed through control of DC current at the constant displacement mode. The abrupt decrease of recovery force during cycle test at high current was occurred by thermal degradation of matrix. This was in good agreement with temperature related in the thermal degradation of matrix. The hysteresis of recovery force with respect to the temperature was compared between wire and composite and the hysterisis of composites was smaller than the wire due to less thermal conduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.245-248
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• 2003

Randomly oriented ferroelectric cerium-substituted $Bi_4Ti_3O_{12}$ thin films have been prepared by using metal-organic decomposition method. The layered perovskite structure was investigated using annealing for 1 h in the temperature range from $550\;{\sim}\;750\;^{\circ}C$. The structure and morphology of the films were characterized using X-ray diffraction and scanning electron microscopy The $Bi_{3.4}Ce_{0.6}Ti_3O_{12}$ (BCeT) thin films showed a perovskite phase and dense microstructure. The grain size of the BCeT films increasedwith increasing annealing temperature. The hysteresis loops of the films were well defined at temperatures above $600\;^{\circ}C$. The 200-nm-thick BCeT thin films annealed at $650\;^{\circ}C$ showed a large remanent polarization (2Pr) of 59.3 ${\mu}C/cm^2$ at an applied voltage of 10 V. The BCeT thin films showed good fatigue endurance up to $5\;{\times}\;10^9$ bipolar cycling at 5 V and 100 kHz.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.122-129
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• 2008

Ferroelectric properties of the PMT-PT were also studied from the temperature dependence of hysteresis loops using a method slightly modified from Sawyer-Tower's. Dielectric, pyroelectric and piezoelectric properties of the ceramics in the system PMT-PT were investigated. The resulted densities of the PMT-PT ceramics system were greater than 97 % of the theoretical value. As observed SEM micrograph of the fracture surfaces of the PMT-PT ceramics system, the average grain sizes were increased about 3-5 ${\mu}m$ to 6-8 ${\mu}m$ with increasing sintering temperature. The specimens with PT<0.30 for PMT-PT solid solution system exhibited the dielectric and pyroelectric properties of a typical relaxor ferroelectrics. The composition with the maximum dielectric constant exhibits relatively superior pyroelectric and piezoelectric properties.