• 제목/요약/키워드: telecommunications

검색결과 14,135건 처리시간 0.03초

A new method for monitoring an OLED panel for lighting by sensing the wave-guided light

  • Han, Jun-Han;Moon, Jaehyun;Shin, Jin-Wook;Joo, Chul Woong;Cho, Doo-Hee;Hwang, Joohyun;Huh, Jin Woo;Chu, Hye Yong;Lee, Jeong-Ik
    • Journal of Information Display
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    • 제13권3호
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    • pp.119-123
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    • 2012
  • In this work, we report on a new monitoring method for an organic light-emitting diode (OLED) panel for lighting by optical sensing of the wave-guided light in the substrate. Using microlens array films, the wave-guided light was extracted into the edge or back side of the panel to be monitored by a photodiode. The luminance of the extracted light was measured as linearly proportional to the front light. Thus, by converting the extracted light into photo voltage, monitoring the luminance change occurring in the OLED is possible. Based on the results and concepts, we have proposed a photodiode-equipped driving circuit which can generate compensated driving current for uniform luminance of OLED panels.

Robust Design of Coordinated Set Planning with the Non-Ideal Channel

  • Dai, Jianxin;Liu, Shuai;Chen, Ming;Zhou, Jun;Qi, Jie;Liang, Jingwei
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제8권5호
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    • pp.1654-1675
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    • 2014
  • In practical wireless systems, the erroneous channel state information (CSI) sometimes deteriorates the performance drastically. This paper focuses on robust design of coordinated set planning of coordinated multi-point (CoMP) transmission, with respect to the feedback delay and link error. The non-ideal channel models involving various uncertainty conditions are given. After defining a penalty factor, the robust net ergodic capacity optimization problem is derived, whose variables to be optimized are the number of coordinated base stations (BSs) and the divided area's radius. By the maximum minimum criterion, upper and lower bounds of the robust capacity are investigated. A practical scheme is proposed to determine the optimal number of cooperative BSs. The simulation results indicate that the robust design based on maxmin principle is better than other precoding schemes. The gap between two bounds gets smaller as transmission power increases. Besides, as the large scale fading is higher or the channel is less reliable, the number of the cooperated BSs shall be greater.

Towards Multi-color Microencapsulated Electrophoretic Display

  • Kim, Chul-Am;Myoung, Hey-Jin;Kang, Seung-Youl;Kim, Gi-Heon;Ahn, Seong-Deok;You, In-Kyu;Oh, Ji-Young;Baek, Kyu-Ha;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.464-467
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    • 2005
  • In this paper, we present techniques to manufacture color electronic ink for multi-color electrophoretic display implementation. The charged color pigments have been prepared to have superior affinity for dielectric fluid. White $TiO_2$ nanoparticles were modified with poly(methyl methacrylate) copolymer for a microencapsulated electrophoretic display system, in order to reduce the density mismatch between nanoparticles and dielectric medium. These color balls and white pigment particle suspensions were microencapsulated through the typical microencapsulation technique. We fabricate the microcapsules to the single layer on flexible ITO substrate to test the multi-color electrophoretic display application.

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Threshold Voltage Control of Pentacene Thin-Film Transistor with Dual-Gate Structure

  • Koo, Jae-Bon;Ku, Chan-Hoe;Lim, Sang-Chul;Lee, Jung-Hun;Kim, Seong-Hyun;Lim, Jung-Wook;Yun, Sun-Jin;Yang, Yong-Suk;Suh, Kyung-Soo
    • Journal of Information Display
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    • 제7권3호
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    • pp.27-30
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    • 2006
  • This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.

Joint Opportunistic Spectrum Access and Optimal Power Allocation Strategies for Full Duplex Single Secondary User MIMO Cognitive Radio Network

  • Yue, Wenjing;Ren, Yapeng;Yang, Zhen;Chen, Zhi;Meng, Qingmin
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제9권10호
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    • pp.3887-3907
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    • 2015
  • This paper introduces a full duplex single secondary user multiple-input multiple-output (FD-SSU-MIMO) cognitive radio network, where secondary user (SU) opportunistically accesses the authorized spectrum unoccupied by primary user (PU) and transmits data based on FD-MIMO mode. Then we study the network achievable average sum-rate maximization problem under sum transmit power budget constraint at SU communication nodes. In order to solve the trade-off problem between SU's sensing time and data transmission time based on opportunistic spectrum access (OSA) and the power allocation problem based on FD-MIMO transmit mode, we propose a simple trisection algorithm to obtain the optimal sensing time and apply an alternating optimization (AO) algorithm to tackle the FD-MIMO based network achievable sum-rate maximization problem. Simulation results show that our proposed sensing time optimization and AO-based optimal power allocation strategies obtain a higher achievable average sum-rate than sequential convex approximations for matrix-variable programming (SCAMP)-based power allocation for the FD transmission mode, as well as equal power allocation for the half duplex (HD) transmission mode.

Power module stray inductance extraction: Theoretical and experimental analysis

  • Jung, Dong Yun;Jang, Hyun Gyu;Cho, Doohyung;Kwon, Sungkyu;Won, Jong Il;Lee, Seong Hyun;Park, Kun Sik;Lim, Jong-Won;Bae, Joung Hwan;Choi, Yun Hwa
    • ETRI Journal
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    • 제43권5호
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    • pp.891-899
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    • 2021
  • We propose a stray inductance extraction method on power modules of the few-kilovolts/several-hundred-amperes class using only low voltages and low currents. The method incorporates a double-pulse generator, a level shifter, a switching device, and a load inductor. The conventional approach generally requires a high voltage of more than half the power module's rated voltage and a high current of around half the rated current. In contrast, the proposed method requires a low voltage and low current environment regardless of the power module's rated voltage because the module is measured in a turn-off state. Both theoretical and experimental results are provided. A physical circuit board was fabricated, and the method was applied to three commercial power modules with EconoDUAL3 cases. The obtained stray inductance values differed from the manufacturer-provided values by less than 1.65 nH, thus demonstrating the method's accuracy. The greatest advantage of the proposed approach is that high voltages or high currents are not required.

Speech emotion recognition based on genetic algorithm-decision tree fusion of deep and acoustic features

  • Sun, Linhui;Li, Qiu;Fu, Sheng;Li, Pingan
    • ETRI Journal
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    • 제44권3호
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    • pp.462-475
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    • 2022
  • Although researchers have proposed numerous techniques for speech emotion recognition, its performance remains unsatisfactory in many application scenarios. In this study, we propose a speech emotion recognition model based on a genetic algorithm (GA)-decision tree (DT) fusion of deep and acoustic features. To more comprehensively express speech emotional information, first, frame-level deep and acoustic features are extracted from a speech signal. Next, five kinds of statistic variables of these features are calculated to obtain utterance-level features. The Fisher feature selection criterion is employed to select high-performance features, removing redundant information. In the feature fusion stage, the GA is is used to adaptively search for the best feature fusion weight. Finally, using the fused feature, the proposed speech emotion recognition model based on a DT support vector machine model is realized. Experimental results on the Berlin speech emotion database and the Chinese emotion speech database indicate that the proposed model outperforms an average weight fusion method.

A 0.9-V human body communication receiver using a dummy electrode and clock phase inversion scheme

  • Oh, Kwang-Il;Kim, Sung-Eun;Kang, Taewook;Kim, Hyuk;Lim, In-Gi;Park, Mi-Jeong;Lee, Jae-Jin;Park, Hyung-Il
    • ETRI Journal
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    • 제44권5호
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    • pp.859-874
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    • 2022
  • This paper presents a low-power and lightweight human body communication (HBC) receiver with an embedded dummy electrode for improved signal acquisition. The clock data recovery (CDR) circuit in the receiver operates with a low supply voltage and utilizes a clock phase inversion scheme. The receiver is equipped with a main electrode and dummy electrode that strengthen the capacitive-coupled signal at the receiver frontend. The receiver CDR circuit exploits a clock inversion scheme to allow 0.9-V operation while achieving a shorter lock time than at 3.3-V operation. In experiments, a receiver chip fabricated using 130-nm complementary metal-oxide-semiconductor technology was demonstrated to successfully receive the transmitted signal when the transmitter and receiver are placed separately on each hand of the user while consuming only 4.98 mW at a 0.9-V supply voltage.

Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

  • Lee, Hyun-Soo;Jung, Dong Yun;Park, Youngrak;Jang, Hyun-Gyu;Lee, Hyung-Seok;Jun, Chi-Hoon;Park, Junbo;Mun, Jae Kyoung;Ryu, Sang-Ouk;Ko, Sang Choon;Nam, Eun Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권3호
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    • pp.354-362
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    • 2017
  • We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs

  • Wang, Wei;Wang, Huan;Wang, Xueying;Li, Na;Zhu, Changru;Xiao, Guangran;Yang, Xiao;Zhang, Lu;Zhang, Ting
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권5호
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    • pp.615-624
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    • 2014
  • In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.