• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.110-113
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• 2001

We present an interferometer system, which is able to perform both the phase shifting interferometry and white light interferometry. The interferometer system uses a d.c. motor to control the probe position with an accuracy of 10nm, which shows an outstanding performance on white light interferometry. However, the moving mechanism of d.c. motor is not accurate enough for the phase shifting interferometry that requires a moving precision less than 1 nm. We therefore propose a Fourier transform technique to calculate the phase of interferograms, which is strongly resistant to calibration errors and external vibration. Experimental results show that the Fourier transform technique is capable of reducing the measurement error caused by inaccurate movement within 0.1nm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.459-465
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• 2013

This paper presents a differential interferometry technique for soil moisture change detection by measuring surface-height variation. COSMO-SkyMed SAR images were used to verify the DInSAR(differential interferometric SAR) technique. The soil penetration depth changes according to soil moisture, that causes phase change of the received signal. The height of soil surface and its displacement can be detected by a radar interferometry technique using phase difference of two received signals. To retrieve displacement variation, one of three SAR images is used as a reference image. Reference image and other two images are processed by the differential interferometry technique in the same area. The soil moisture was measured for the test sites to verify the DInSAR technique. The penetration depth is calculated by using the in-situ measured soil moisture data and it is compared with the displacement values acquired by the DInSAR technique.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.397-401
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• 1995

ESPI(Electronic Speckle Pattern Interfermetry) is an optical technique to measure surface deforamtion of engineering components and materials in industrial ares. This optical method is capable of providing full-field results with high spatial resolution, high speed and is the non-contact technique. One of important application aspects using electronic speckle pattern interferometry is to generate contours of a diffuse object in order to provide data for 3-D shape analysis and topography measurement. The contouring method by modified dual-beam speckle pattern interferometry is proposed. We introduce a shift of the illumination beams through optical fiber in order to obtain the contour fringe patterns. The speckle pattern correlation technique is suitable for providing measurement range from millimeters to several centimeters. The complete geometric analysis of the contoretical and experimental results are obtained.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.12-15
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• 1990

Holospeckle interferometry, the combined technique of holographic interferometry and speckle photography, was applied to the measurement of 3-D contact deformation created by an indentor. This new tech$.$ nique makes possible to measure both in-plane and out-of-plane displacements from one photographic plate. In this study, the optical system based on image holography was set up. In order to enhance the size and the contrast of the speckle, a proper magnification and a low reference beam ratio was used as compared with the conventional holographic interferometry technique. This system shows the magnified and clear holographic interference fringe as well as Young's fringe patterns.tterns.

• Corrosion Science and Technology
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• v.4 no.6
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• pp.217-221
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• 2005

In the present investigation, holographic interferometry was utilized for the first time to monitor in situ the thickness of the oxide film of aluminium samples during anodization processes in boric acid solutions. The anodization process (oxidation) of the aluminium samples was carried out by the technique of the electrochemical impedance spectroscopy(EIS), in different concentrations of boric acid (0.5-5.0% $H_3BO_3$) at room temperature. In the mean time, the real-time holographic interferometry was used to measure the thickness of anodized (oxide) film of the aluminium samples in solutions. Consequently, holographic interferometry is found very useful for surface finish industries especially for monitoring the early stage of anodization processes of metals, in which the thickness of the anodized film of the aluminium samples can be determined without any physical contact. In addition, measurements of electrochemical values such as the alternating current (A.C) impedance(Z), the double layer capacitance($C_{dl}$), and the polarization resistance(Rp) of anodized films of aluminium samples in boric acid solutions were made by the electrochemical impedance spectroscopy(EIS). Attempts to measure electrochemical values of Z, Cdl, and Rp were not possible by holographic interferometry in boric acid especially in low concentrations of the acid. This is because of the high rate of evolutions of interferometric fringes during the anodization process of the aluminium samples in boric acid, which made measurements of Z, Cdl, and Rp are difficult.

• Current Optics and Photonics
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• v.1 no.5
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.10
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• pp.156-164
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• 1998

Electronic Speckle Pattern Interferometry(ESPI) has been used to measure surface deformations of engineering components and materials in industrial areas. ESPI, a non-contact and non-destructive technique, is capable of providing full-field results with high spatial resolution and high speed. One of the important application using electronic speckle pattern interferometry is electronic speckle contouring of a diffused object for 3-D shape analysis and topography measurement. Generally the electronic speckle contouring is suitable for providing measurement range from millimeters to several centimeters. In this study, we introduce the contouring method by modified dual-beam speckle pattern interferometer and the shift of the two illumination beams through optical fiber in order to obtain the contour fringe patterns. We also describe formation process of depth contour fringes and grid contour fringes by shifting direction of the two illumination beams. Before the experiments, we performed the geometric analysis for dual-beam-shifted ESPI contouring, and then, the electronic speckle contouring experiment with various specimens. For quantitative analysis of the contour fringes, we used 4-frame phase shifting method with PZT Finally, good agreement between the geometric analysis and experimetal results is obtained.

• Journal of the Optical Society of Korea
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• v.17 no.4
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• pp.317-322
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• 2013

We have proposed and demonstrated a low numerical aperture technique to measure the depth of through silicon vias (TSVs) using white-light scanning interferometry. The high aspect ratio hole like TSV's was considered to be impossible to measure using conventional optical methods due to low visibility at the bottom of the hole. We assumed that the limitation of the measurement was caused by reflection attenuation in TSVs. A novel interference theory which takes the structural reflection attenuation into consideration was proposed and simulated. As a result, we figured out that the low visibility in the interference signal was caused by the unbalanced light intensity between the object and the reference mirror. Unbalanced light can be balanced using an aperture at the illumination optics. As a result of simulation and experiment, we figured out that the interference signal can be enhanced using the proposed technique. With the proposed optics, the depth of TSVs having an aspect ratio of 11.2 was measured in 5 seconds. The proposed method is expected to be an alternative method for 3-D inspection of TSVs.

• Applied Microscopy
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• v.41 no.4
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• pp.223-228
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• 2011

White light scanning interferometry has been employed to analyze surface features of diverse specimens. Long established in the field of materials engineering, the technique provides quantitative three-dimensional data as well as qualitative morphological images. It uses white light that is split and reflected from a reference mirror and an object. Merged together, the light generates interference patterns representing topographical contours of the object surface. The amplitude of the z-axis data is differentiated by gray scale. The technique allows the rapid, noncontact, and wide-field measurements for morphometry of biological specimens including chondrocytes, tooth enamel, and plant leaves. Quantification of the dimension of surface structures such as width, length, and elevation angle could be achievable by white light scanning interferometry. The light reflection from plant leaves has been assumed to be sufficient for the technique. Without special specimen preparations like conductive metal coating, the technique can be increasingly used for quantitative three-dimensional surface measurements of biological specimens.

• Journal of Mechanical Science and Technology
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• v.19 no.3
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• pp.820-825
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• 2005

This paper proposes non-destructive ESPI technique to evaluate inside defects of semiconductor package quantitatively. Inspection system consists of ESPI system, thermal loading system and adiabatic chamber. The technique has high feasibility in non-destructive testing of semiconductor and gives solutions to the drawbacks in previous technique, time-consuming and the difficulty of quantitative evaluation. In result, most of defects are classified in delamination, from which it is inferred to the insufficiency of adhesive strength between layers and nonhomogeneous heat spread. The $90\%$ of tested samples have a delamination defect started at the around of the chip which may be related to heat spread design.