• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.55.1-55.1
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• 2010

Cost efficient and large area deposition of superior quality $Al_2O_3$ doped zinc oxide (AZO) films is instrumental in many of its applications including solar cell fabrication due to its numerous advantages over ITO films. In this study, AZO films were prepared by a highly efficient rotating cylindrical dc magnetron sputtering system using AZO target, which has a target material utilization above 80%, on glass substrates in argon ambient. A detailed analysis on the electrical, optical and structural characteristics of AZO thin films was carried out for solar cell application. The properties of films were found to critically depend on deposition parameters such as sputtering power, substrate temperature, working pressure, and thickness of the films. A low resistivity of ${\sim}5.5{\times}10-4{\Omega}-cm$ was obtained for films deposited at 2kW, keeping the pressure and substrate temperature constant at 3 mtorr and $230^{\circ}C$ respectively, mainly due to an increase in carrier mobility and large grain size which would reduce the grain boundary scattering. The increase in carrier mobility with power can be attributed to the columnar growth of AZO film with (002) preferred orientation as revealed by XRD analysis. The AZO films showed a high transparency of>87% in the visible wavelength region irrespective of deposition conditions. Our results offers a cost-efficient AZO film deposition method which can fabricate films with significant low resistivity and high transmittance that can find application in thin-film solar cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.2-41.2
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• 2011

Display 산업의 확대로 인해 광학적 특성 및 전기적 특성이 우수한 TCO (Transparent conductive oxide) 연구가 활발히 진행되고 있다. 기존에는 ITO가 대부분의 분야에서 이용되었지만 In의 경제적인 단점으로 인해 새로운 대체물로써 ZnO가 떠오르고 있다. ZnO는 전형적인 n-type 반도체이며, wide band gap 물질로써 Al, Ga, B과 같은 3 족 원소를 doping 함으로써 광학적 및 전기적 특성을 향상시킬 수 있다. 최근에는 ZnO의 이온반경과 비슷한 Ga을 도핑한 Ga-doped ZnO 박막에 대한 연구가 활발히 진행되고 있다. 이는 ZnO에 Ga을 도핑함으로써 격자결함을 최소화 시키고 carrier concentration 및 hall mobility를 향상시켜 전기전도도의 향상을 이루기 때문이다. 본 연구에서는 $Ga_2O_3$이 3wt% doping 된 ZnO rotating cylindrical target 을 DC magnetron sputtering 을 이용하여 2 kW의 파워와 70 kHz의 주파수를 고정하고, 증착 온도를 변화시켜 유리 기판 위에 Ga-doped ZnO 박막을 증착 하였다. 증착 시 온도가 Ga-doped ZnO 박막에 미치는 영향을 관찰하기 위해 박막 표면의 조성을 분석하였고, 결정성 및 전기적 특성의 변화를 통해 박막의 특성을 비교 평가하였다. Ga-doped ZnO 박막의 표면과 두께는 SEM (Scanning electron microscope) 분석을 통해 관찰하였고, XRD (X-ray diffractometer) 를 이용하여 결정학적 특성을 확인하였다. 또한 Van der Pauw 방법을 이용한 hall 측정을 통해 resistivity, carrier concentration, hall mobility를 분석하였고, UV-Vis를 이용하여 박막의 투과율을 분석하였으며, 이를 토대로 투명 전도막으로써 Ga-doped ZnO 박막의 응용 가능성을 평가하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.4
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• pp.780-788
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• 2011

This paper suggests one model, which can be monitor and control target system at anytime and anywhere by a WAP and ME based personal cellular phone(Feature phone) and internet connection. The suggesting model tried to overcome constraints of distance and mobility of conventional methods, TCP/IP based remote data monitoring system, which combine PDA and WLAN technologies. For the experiments of suggesting model, the target systems are constructed with individual modules, which need AC or DC power control. The development software for the control and monitor of local system use NI Labview for the easy-programming and confidence. Also, web server use APM setup for the general user. The mobile connection environments of personal cellular phone are programmed by use WML and mHTML language for the general access. Through the experiments, we have showed that suggesting model can overcome constraints of distance and mobility of conventional system.

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.45-50
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• 2023

Microfluidic preconcentration technologies, which collect or extract low-abundance analytes in a specific location, have been spotlighted in various applications such as medical and bio-engineering. Here, we conducted extensive studies on the variables to be considered when concentrating target samples based on electrophoresis in an electromembrane system utilizing an ion exchange membrane. Using negatively charged Alexa Fluor 488 and positively charged Rhodamine 6G as fluorescent dyes, we examined the effects of flow velocity of the main channel, channel electrolyte concentration, and applied voltage on sample preconcentration. As a result, it was found that the preconcentration of the target sample occurs much better when the flow velocity is slow and the concentration of the main channel containing the sample is high, given that the channel concentration ratio (main and buffer) is constant. In addition, based on the experimental data acquired in this study, the electrophoretic mobility values of Alexa Fluor 488 and Rhodamine 6G were experimentally calculated and compared.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.1
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• pp.191-196
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• 2010

Aluminum doped zinc oxide (AZO) films have been prepared on Coming 7059 glass substrates by r.f. magnetron sputtering method. A powder target instead of a conventional sintered ceramic target was used in order to improve the utilization efficiency of the target and reduce the cost of the film deposition process. The influence of sputter pressure on the structural, electrical, and optical properties of AZO films were studied. The AZO films had hexagonal wurtzite structure with a preferred c-axis orientation, regardless of sputter pressure and target types. The crystallinity and degree of orientation was increased by increasing the sputter pressure. For higher sputtering pressures, a reduction of the resistivity was observed due to a increase on the mobility and the carrier concentration. The lowest resistivity of $6.5{\times}10^{-3}\;{\Omega}-cm$ and the average transmittance of 80% can be obtained for films deposited at 15 mTorr.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.211-217
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• 2008

Recently, there are many efforts to support seamless mobility in 802.11 WLANs using IP Layer mobility protocols. The IP layer mobility protocols are the most efficient mechanism to guarantee the service session continuity when IP subnet is changed during handover. Even if the IP layer mobility protocols are quite efficient, the feature of the protocols that had been designed to consider only L3 layer makes it difficult to improve the performance of hand over more and more. Nowadays, to overcome this limitation of IP mobility protocols, many researchers have worked on the mobility protocols integration of different layers (e.g., L2 layer). In this paper, we propose the enhanced Proxy MIPv4 to minimize the latency of handover using MIH protocol in 802.11 WLANs. The proposed mechanism minimizes the latency of authentication by exchanging security keys between Access Routers during handover. Moreover, it also minimizes packet losses by Inter-AP Tunneling and data forwarding.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.10 no.4
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• pp.121-127
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• 2011

Many peer-to-peer (p2p) systems have been studied in distributed, ubiquitous computing environments. Distributed hash table (DHT)-based p2p systems can improve load-balancing even though locality utilization and user mobility are not guaranteed. We propose a mobile locality-based hierarchical p2p overlay network (MLH-Net) to address locality problems without any other services. MLH-Net utilizes mobility features in a mobile environment. MLH-Net is constructed as two layers, an upper layer formed with super-nodes and a lower layer formed with normal-nodes. Because super-nodes can share advertisements, we can guarantee physical locality utilization between a requestor and a target during any discovery process. To overcome a node failure, we propose a simple recovery mechanism. The simulation results demonstrate that MLH-Net can decrease discovery routing hops by 15% compared with JXTA and 66% compared with Chord.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.