• 한국국방경영분석학회지
• /
• 제4권1호
• /
• pp.80-90
• /
• 1978

전차의 Dimension은 다음과 같은 전차의 기능에 영향을 미친다. 즉 Firepower, Mobility, Armorthickness and Target detection Instrument등, 이들은 서로 상관성을 가지고 있다. 승무원(crew)을 보호한다고 하며 지나치게 장갑(thickness)에 중점을 두면 전차의 속도가 감소되여 적의 대전차포에 취약해지며 기습적인 기동력을 발휘하지 못한바. 반면에 공격적인 기동력을 중요시하며 속도에 치중한다면 Engine의 크기가 커지며 그 원인은 전차의 크기를 더하여 좋은 Target의 대상이 된다. 여기에서 한가지 예를 들었지만 이러한 상관관계는 많이 존재하며 이러한 약점을 제거하고서도 좋은 전차를 설계하는 것이 목적이다. 좋은 Horse Power를 내면서도 재래식 Engine 보다 Engine의 크기를 작게하는 방법은 없을까? 하는 점을 여기서 엿볼 수 있다. 시간과 예산을 절약하려면 생산전에 충분한 Disign과 연구가 필요함을 강조하고 있다.

• 한국재료학회지
• /
• 제26권12호
• /
• pp.676-680
• /
• 2016

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at $400^{\circ}C$. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of $12.91cm^2/V.s$, a low swing of 0.80 V/decade, $V_{th}$ of 5.78 V, and a high $I_{on/off}$ ratio of $2.52{\times}10^6$.

• 정보통신설비학회논문지
• /
• 제8권3호
• /
• pp.132-137
• /
• 2009

In this paper, a position recognition system is designed, implemented, and tested using IEEE 802.15.4a PHY (CSS) hardware and Tiny OS environment. The system is designed with extensibility and flexibility. The system consists of five kinds of nodes which have different functions from each other. Three communication channels are used for collision avoidance. In each cell, an arbiter node is used to minimize message collisions. The proposed arbitration protocol is designed to support mobility of arbitrary target nodes. Target nodes calculates their locations with communications to four location reference nodes which are placed on the comers of each cell.

• BMB Reports
• /
• 제47권2호
• /
• pp.92-97
• /
• 2014

We have examined the effect of bithorax complex genes on the expression of castor gene. During the embryonic stages 12-15, both Ultrabithorax and abdominal-A regulated the castor gene expression negatively, whereas Abdominal-B showed a positive correlation with the castor gene expression according to real-time PCR. To investigate whether ABD-B protein directly interacts with the castor gene, electrophoretic mobility shift assays were performed using the recombinant ABD-B homeodomain and oligonucleotides, which are located within the region 10 kb upstream of the castor gene. The results show that ABD-B protein directly binds to the castor gene specifically. ABD-B binds more strongly to oligonucleotides containing two 5'-TTAT-3' canonical core motifs than the probe containing the 5'-TTAC-3' motif. In addition, the sequences flanking the core motif are also involved in the protein-DNA interaction. The results demonstrate the importance of HD for direct binding to target sequences to regulate the expression level of the target genes.

• 한국재료학회지
• /
• 제26권4호
• /
• pp.222-227
• /
• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2000년도 추계학술발표회 초록집
• /
• pp.12-12
• /
• 2000

This paper investigated the effect of the film deposition rate for $CrN_x$ microstructure and mechanical properties. For these purpose, pure Cr an stoichiometric CrN films were deposited with various target power density on Si hardened M2 tool steel. The variation of ni trogen concentration in $CrN_x$ f analyzed by AES and deposition rate was calculated by measuring of thickness using ${\alpha}-step$ profilometer. The microstructure was analyzed by X-Ray Diffract and Scanning Electron Microscopy(SEM), and mechanical properties were evalua residual stress, microhardness and adhesion tests. Deposition rate of Cr and CrN increased as an almost linear function of target power density from $0.25\mu\textrm{m}/min$ and $0.15\mu\textrm{m}/min$ to $0.43\mu\textrm{m}/min$. Residual stresses of Cr and CrN films were from tensi Ie to compressive stress with an increase of deposi tion rate a compressive stresses were increased as more augmentation of deposition r maximum hardness value of $2300kg/\textrm{mm}^2$ and the best adhesion strength correspond HF 1 were obtained for CrN film synthesized at the highest target densitY($13.2W/\textrm{mm}^2$) owing to high residual compressive stress and increasing mobility.

• 한국표면공학회지
• /
• 제47권6호
• /
• pp.311-315
• /
• 2014

Indium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetron sputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the deposition under different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurements system. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC power increased with increasing annealing time. However, they increased with increasing annealing time at high DC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealing time. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.

• 한국전기전자재료학회논문지
• /
• 제34권2호
• /
• pp.99-104
• /
• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Smart Structures and Systems
• /
• 제32권4호
• /
• pp.207-218
• /
• 2023

Real-time monitoring of the behavior of reinforced soil retaining wall (RSW) is required for safety checks. In this study, a targetless displacement measurement technology (TDMT) consisting of an image registration module and a displacement calculation module was proposed to monitor the behavior of RSW, in which facing displacement and settlement typically occur. Laboratory and field experiments were conducted to compare the measuring performance of natural target (NT) with the performance of artificial target (AT). Feature count- and location-based performance metrics and displacement calculation performance were analyzed to determine their correlations. The results of laboratory and field experiments showed that the feature location-based performance metric was more relevant to the displacement calculation performance than the feature count-based performance metric. The mean relative errors of the TDMT were less than 1.69 % and 5.50 % for the laboratory and field experiments, respectively. The proposed TDMT can accurately monitor the behavior of RSW for real-time safety checks.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 추계학술대회 초록집
• /
• pp.55.1-55.1
• /
• 2010

Cost efficient and large area deposition of superior quality $Al_2O_3$ doped zinc oxide (AZO) films is instrumental in many of its applications including solar cell fabrication due to its numerous advantages over ITO films. In this study, AZO films were prepared by a highly efficient rotating cylindrical dc magnetron sputtering system using AZO target, which has a target material utilization above 80%, on glass substrates in argon ambient. A detailed analysis on the electrical, optical and structural characteristics of AZO thin films was carried out for solar cell application. The properties of films were found to critically depend on deposition parameters such as sputtering power, substrate temperature, working pressure, and thickness of the films. A low resistivity of ${\sim}5.5{\times}10-4{\Omega}-cm$ was obtained for films deposited at 2kW, keeping the pressure and substrate temperature constant at 3 mtorr and $230^{\circ}C$ respectively, mainly due to an increase in carrier mobility and large grain size which would reduce the grain boundary scattering. The increase in carrier mobility with power can be attributed to the columnar growth of AZO film with (002) preferred orientation as revealed by XRD analysis. The AZO films showed a high transparency of>87% in the visible wavelength region irrespective of deposition conditions. Our results offers a cost-efficient AZO film deposition method which can fabricate films with significant low resistivity and high transmittance that can find application in thin-film solar cells.