• 한국컴퓨터정보학회논문지
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• 제17권4호
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• pp.99-107
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• 2012

본 논문에서는 UAV(Unmanned Aerial Vehicle)을 이용하여 목표물을 찾은 후 기지국까지 통신 네트워크를 제공하기 위해 UAV 집단을 제어하는 방안을 제안한다. 기존의 통신 시설을 이용하지 않고 UAV들 간에만 무선 랜 통신이 가능하다고 가정한다. 제안 방안은 UAV들이 탐색지역 내에 위치한 목표물을 찾기 위해 기지국으로부터 선형 형태로 출발하고 목표물을 찾은 후에, 목표물에 대한 정보를 기지국까지 전달하기 위하여 UAV 그룹을 이동시킨다. 이 때, 목표물을 발견한 최소 하나의 UAV는 그 위치에 머무른다. 본 논문은 기지국으로의 이동하는 과정에서 안정적인 연결성을 유지하기 위한 방법을 설명한다. NS-2를 사용한 모의실험을 통하여 제안되는 기법을 검증하고 성능을 평가한다. 제안 기법은 기존의 통신 시설을 이용할 수 없는 재난 상황이나 전시 상황과 같이 UAV가 사람을 대신하여 목표물을 감지하며 기지국으로 신속히 전달하는데 유용하게 사용될 수 있다.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.345.2-345.2
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• 2016

Alumina (Al2O3) doped zinc oxide (ZnO) films (AZO) have been prepared from 2 wt.% Al2O3 doped ZnO target by DC magnetron sputtering at a 2 mTorr (0.27 Pa) chamber pressure in (15 sccm) argon ambient. We obtained films of various opto-electronic properties by variation of target angle from 32.5o to 72.5o. At lower target angle deposited films show higher values in optical gap, mobility of charge carrier, carrier concentration, crystallite grain size, transmission range of wavelength, which are favorable characteristics of AZO as a transparent conducting oxide (TCO). At higher target angle the sheet resistance, work function, surface roughness for the AZO films increases. Measured haze ratio of the films changed lower to higher and size of characteristic surface structure of as deposited film ranges from ~40 nm to ~300 nm. By a combination of low and high target angle we obtained a textured TCO film with high conductivity.

• 한국정보처리학회논문지
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• 제7권4호
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• pp.1236-1245
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• 2000

This paper propose a novel scheme, called Mobiel Terminal Initiated Scheme(MTIS), in which mobile terminal initiates the backward handover by sending handover request message with the list of target radio ports. In this scheme, the old ATM switch suporting end-user mobility, denoted by EMAS\ulcorner, checks whether each EMAS\ulcorner, managing the target radio port, has its available resources. If it has, the EMAS\ulcorner performs the path rerouting between CrossOver Switch (COS) and itself after deciding the most suitable target radio port. Therefore, the MT initiates the handover after deciding the most suitable target radio port through the beacon signal of Wireless Access Point (WAP). The EMAS\ulcorner have only to check the resource availability of the target radio port. It is no need to waste time to decide the suitable target radio port. Also, once receiving the request of the resource availability, the EMAS\ulcorner can reduce the rerouting delay time due to perform the path rerouting to the COS. In comparison with that of the ATM-Forum procedure, our proposed MTIS handover delay time reduced 14~21%, and end-to-end transfer delay time reduced 2~9%, as a result of the simulation.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• 전기전자학회논문지
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• 제23권2호
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• pp.375-379
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• 2019

Zn와 Sn의 원자비가 2:1인 타겟을 고주파 스파터링하여 $ZnO-SnO_2(ZTO)$박막을 증착하고 열처리에 따른 구조적 특성변화를 조사하였다. 이 ZTO박막을 활성층으로 사용하여 투명박막트랜지스터(TTFT)를 제조하였다. 약 100 nm 두께의 $SiO_2$위에 100 nm의 $Si_3N_4$막을 기른 후 TTFT의 게이트 절연막으로 채택하였다. TTFT의 전달 특성을 통해 이동도, 문턱전압, 작동전류-차단전류 비($I_{on}/I_{off}$), 계면트랩밀도를 구하였다. 기판 가열 및 후속 열처리가 ZTO TTFT의 특성 변화에 미치는 영향을 분석하였다.

• Journal of Plant Biotechnology
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• 제45권4호
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• pp.322-327
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• 2018

Post-translational modification of proteins regulates signaling cascades in eukaryotic system, including plants. Among these modifications, phosphorylation plays an important role in modulating the functional properties of proteins. Plants perceive environmental cues that directly affect the phosphorylation status of many target proteins. To determine the effect of environmentally induced phosphorylation in plants, in vivo methods must be developed. Various in vitro methods are available but, unlike in animals, there is no optimized methodology for detecting protein phosphorylation in planta. Therefore, in this study, a robust, and easy to handle Phos-Tag Mobility Shift Assay (PTMSA) is developed for the in vivo detection of protein phosphorylation in plants by empirical optimization of methods previously developed for animals. Initially, the detection of the phosphorylation status of target proteins using protocols directly adapted from animals failed. Therefore, we optimized the steps in the protocol, from protein migration to the transfer of proteins to PVDF membrane. Supplementing the electrophoresis running buffer with 5mM $NaHSO_3$ solved most of the problems in protein migration and transfer. The optimization of a fast and robust protocol that efficiently detects the phosphorylation status of plant proteins was successful. This protocol will be a valuable tool for plant scientists interested in the study of protein phosphorylation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국재료학회지
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• 제20권1호
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.