• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• ETRI Journal
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• v.33 no.1
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• pp.6-12
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• 2011

A case study of an active transmitting patch antenna revealed a characteristic loop locus of DC power versus RF output power as drive frequency was varied, with an operational bandwidth substantially smaller than the impedance bandwidth of the radiator. An approximate simulation technique, based on separation of the output capacitance of the power transistor, yielded easily visualized plots of power dependence on internal load impedance, and a simple interpretation of the experimental results in terms of a near-resonance condition between the output capacitance and output packaging inductance.

• Proceedings of the KOSOMBE Conference
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• v.1992 no.05
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• pp.92-97
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• 1992

The pulsatile nature of blood flow makes artefacts in 2D Fourier transform image. Spatial presaturation is known to be effective in eliminating flow artefacts when the spin echo acquisition is employed. However. this method requires additional RF pulse and spoiling gradient for presaturation. In this paper a new flow saturation technique which does not require additional saturation-RF and gradient is proposed. The proposed technique is equivalent to the existing saturation technique but the elimination of the flow component is achieved by a pair of tailored $90^{\circ}-180^{\circ}$ RF pulses in tile spin echo sequence. By use of two tailored RF pulses with opposite phase polarity, a linear phase gradient is generated for those moving materials and consequently all the spins of moving materials become dephased thereby no signal is observable. Computer simulations and experimental results obtained using both a phantom and a human volunteer with a 2.0 T whole body system are also presented.

• 전자공학회논문지 IE
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• v.45 no.2
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• pp.1-5
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• 2008

In this work, RF performance degradation due to hot carrier effects in SOI MOSFET have been measured and analyzed. The LNA that designed at $V_{GS}=0.8V$, f=2.5GHz, gain is 16.51dB and noise figure is 1.195dB. After stress at SOI, the LNA's gain and noise figure change of 15.3dB and 1.44dB with before stress.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.213-216
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• 1988

This paper describes design & fabrication of RF modulator using 2um Bipolar process which convert video & audio signal into high frequency VHF/UHF signals for all TV standards. This VHF/UHF RF modulator fabricated using 2um bipolar process( T max = 5GHz) shows satisfying electrical characteristics and meets all the design targets.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.203-203
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• 2013

Low pressure plasmas play a key role in many areas including electronic, aerospace, automotive, biomedical, and toxic waste management industries, and the advantages of the plasma are well known the processing procedure is established. However, the insight behavior of the discharges remains a mystery, even though a simple geometry as capacitive discharges. In this work, we measured RF power dissipation in capacitively coupled plasma (CCP) at various experiment conditions with potential probe and RF current probe. Through the results, we will have a clearer view of the inner nature of the CCP.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.75-76
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• 2006

A new broadcasting standard for Digital Multimedia Broadcasting(DMB) has been announced in Korea to provide audio, video, and data broadcasting services. There exist two types of DMB; terrestrial DMB and satellite DMB. And in order to service DMB on the single system, the integration of RF module is required. In this paper, we describe an integrated RF tuner module that can receive T-DMB and S-DMB at the same time, which includes an L-band down-converter, a Band III tuner, and a S-DMB tuner.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1001-1004
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• 2000

RFID system is applied to identify, locate and track people, cars, animals. In RFID system, the passive transponder without battery has some benefits than active transponder, such as no restriction in battery exchange and in battery’s life. But it needs auxiliary RF-DC conversion circuit. RF-DC conversion circuit originated from Wireless Power Transmission (WPT). In this paper, RF-DC conversion circuit consists of a microstrip patch antenna and impedance matching circuit, Cock-croft Walton circuit. And RF-DC conversion circuits have two kinds of T-type and Cross-type impedance matching circuits.

• Journal of Information Display
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• v.12 no.2
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• pp.109-113
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• 2011

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.560-564
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C,\;200^{\circ}C,\;100^{\circ}C$, and R.T. by the temperature controller during the deposition. Crystalline and micro-structural characteristics of the films were investigated by XRD and SEM. ZnO films which cooled down naturally or slowly by the temperature controller during the deposition, especially the film were deposited with cooling down from $400^{\circ}C\;to\;200^{\circ}C$ slowly. showed the most outstanding c-axis preferred orientation.