• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.150-151
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.126-127
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.57-58
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• 2008

외부 자기장이 spin-flip field보다 작은 조건 하에서 마이크로 사이즈로 패턴된 synthetic antiferromanet의 ferromagnetic resonance frequency를 표현할 수 있는 이론식을 유도했다. 또한 유도된 이론식을 통해 synthetic antiferromagnet의 기하학적, 자기적 성질이 ferromagnetic resonance frequency가 미치는 영향에 대해 연구했다.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.100-101
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.185-186
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• 2000

• Journal of Magnetics
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• v.15 no.4
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• pp.149-154
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• 2010

Synthetic antiferromagnets (SAFs) are used as free layer structures for various magnetic devices utilizing spintransfer torque (STT). Therefore, it is important to understand current-induced excitation of SAFs. By means of drift-diffusion and macrospin models, we studied the current-induced excitation of a SAF-free layer structure (NiFe/Ru/NiFe). The simulation results were compared with the previous experimental results [N. Smith et al., Phys. Rev. Lett. 101, 247205 (2008)]. We confirmed that a nonzero STT through the Ru layer is essential for explaining the experimental results.

• Journal of Magnetics
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• v.7 no.2
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• pp.55-58
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• 2002

MR transfer behaviors of the permanent magnet biased spin valve MR sensors with SyAF (synthetic antiferromagnet) layers were studied by micromagnetics modeling. For narrow track MR heads, various height to width ratios were considered together with strength of permanent magnets which stabilities the free layed As the MR sensor width is reduced to $0.12 \mu{m}$, sensor height less than 0.09 ${\mu}{\textrm}{m}$ is needed to show good linearity and the Mr.t of permanent magnets smaller than 0.2 memu/$cm^2$ is sufficient for the domain stabilization. The conditions for single domain behavior of the free layer were also investigated through optimizing the biasing strength of permanent magneto the shield gap and the aspect ratio of MR sensor.

• Journal of the Korean Magnetics Society
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• v.19 no.1
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• pp.1-4
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• 2009

Solving the stochastic Landau-Lifshitz-Gilbert equation numerically, we investigate the attempt frequency of magnetization in synthetic antiferromagnet (SyAF). The attempt frequency is estimated while varying the uniaxial anisotropy constant, the energy barrier and the geometry of a magnetic layer. It is found that the attempt frequency is decreased for the same magnetic volume by increasing the asymmetry of the geometry in the high damping region. Also, even for a constant height of energy barrier, the attempt frequency can vary dramatically with uniaxial anisotropy constant.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.203-209
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.