• Title/Summary/Keyword: switching property

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Image Sticking Property in the In-Plane Switching Liquid Crystal Display by Residual DC Voltage Measurements

  • Jeon, Yong-Je;Seo, Dae-Shik;Kim, Jae-Hyung;Kim, Hyang-Yul
    • KIEE International Transactions on Electrophysics and Applications
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    • v.11C no.4
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    • pp.142-145
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    • 2001
  • The residual DC phenomena in the in-plane switching(IPS)-liquid crystal display(LCD) by the voltage-transmittance (V-T) and capacitance-voltage (C-V) hysteresis method on rubbed polyimide (PI) surfaces were studied. We found that the residual DC voltage in the IPS-LCD was decreasing with the increasing concentration of cyano LCs. The residual DC voltage of the IPS-LCD can be improved by the high polarity of cyano LCs.

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A New Zero-Voltage-Switching Bridgeless PFC, Using an Active Clamp

  • Ramezani, Mehdi;Ghasedian, Ehsan;Madani, Seyed M.
    • Journal of Power Electronics
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    • v.12 no.5
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    • pp.723-730
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    • 2012
  • This paper presents a new ZVS single phase bridgeless (Power Factor Correction) PFC, using an active clamp to achieve zero-voltage-switching for all main switches and diodes. Since the presented PFC uses a bridgeless rectifier, most of the time, only two semiconductor components are in the main current path, instead of three in conventional single-switch configurations. This property significantly reduces the conduction losses,. Moreover, zero voltage switching removes switching loss of all main switches and diodes. Also, auxiliary switch turns on zero current condition. The presented converter needs just a simple non-isolated gate drive circuitry to drive all switches. The eight stages of each switching period and the design considerations and a control strategy are explained. Finally, the converter operation is verified by simulation and experimental results.

Steady State Analysis and Design of a Resonant Switching Watkins-Johnson DC-DC Converter (Watkins-Johnson 공진형 DC-DC 컨버터의 정상상태 해석과 최적설계)

  • Ahn, Tae-Young
    • Journal of the Korean Institute of Telematics and Electronics S
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    • v.36S no.8
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    • pp.113-122
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    • 1999
  • A new resonant switching Watkins-Johnson converter was proposed, which minimizes the switching loss and is well suited for high-frequency operation. The steady-state analyses revealed that the voltage gain of the proposed converter is solely determined by the switching frequency. Consequently, to regulate the output voltage of the converter for variable load current the switching frequency should be varied accordingly. Based on the results of analyses, an optimum design procedure for the resonant component values is proposed, which minimized the voltage stress of power switch while maintaining the desired property of zero-voltage switching. Finally, accuracy of analyses and validity of an optimum design procedure are verified on an experimental resonant switching Watkins-Johnson converter prototype.

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A (k,t,n) verifiable multi-secret sharing scheme based on adversary structure

  • Li, Jing;Wang, Licheng;Yan, Jianhua;Niu, Xinxin;Yang, Yixian
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.8 no.12
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    • pp.4552-4567
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    • 2014
  • A (n,t,n) secret sharing scheme is to share a secret among n group members, where each member also plays a role of a dealer,and any t shares can be used to recover the secret. In this paper, we propose a strong (k,t,n) verifiable multi-secret sharing scheme, where any k out of n participants operate as dealers. The scheme realizes both threshold structure and adversary structure simultaneously, and removes a trusted third party. The secret reconstruction phase is performed using an additive homomorphism for decreasing the storage cost. Meanwhile, the scheme achieves the pre-verification property in the sense that any participant doesn't need to reveal any information about real master shares in the verification phase. We compare our proposal with the previous (n,t,n) secret sharing schemes from the perspectives of what kinds of access structures they achieve, what kinds of functionalities they support and whether heavy storage cost for secret share is required. Then it shows that our scheme takes the following advantages: (a) realizing the adversary structure, (b) allowing any k out of n participants to operate as dealers, (c) small sized secret share. Moreover, our proposed scheme is a favorable candidate to be used in many applications, such as secure multi-party computation and privacy preserving data mining, etc.

Liquid Metal Enabled Thermo-Responsive Poly(N-isopropylacrylamide)Hydrogel for Reversible Electrical Switch (액체금속이 첨가된 온도 감응성 poly(N-isopropylacrylamide) 하이드로젤의 전기적 특성 변화 고찰)

  • Lim, Taehwan;Lee, Sohee;Yeo, Sang Young
    • Textile Coloration and Finishing
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    • v.34 no.3
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    • pp.207-216
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    • 2022
  • Hydrogels have gained considerable attention in various fields due to their easily transformative ability by different stimulation. In addition, metal-based conductive additives can enable the hydrogels to be conductive with dimension change. Although the development of the additives offered enhanced electrical properties to the hydrogels, correspondingly enhanced mechanical properties may limit the volume and electrical properties switching after stimulation. Here we prepared poly(N-isopropylacrylamide) (PNIPAM) thermo-responsive hydrogel that has a 32℃ of low critical solution temperature and added liquid metal particles (LMPs) as conductive additives, possessing soft and stretchable benefits. The LMPs enabled PNIPAM (PNIPAM/LMPs) hydrogels to be constricted over 32℃ with a high volume switching ratio of 15.2 when deswelled. Once the LMPs are spontaneously oxidized in hydrogel culture, the LMPs can release gallium ions into the hydrogel nature. The released gallium ions and oxidized LMPs enhanced the modulus of the PNIPAM/LMPs hydrogel, triggering high mechanical stability during repeated swelling/deswelling behavior. Lastly, highly constricted PNIPAM/LMPs hydrogel provided a 5x106 of electrical switching after deswelling, and the switching ratio was closely maintained after repeated swelling/deswelling transformation. This study opens up opportunities for hydrogel use requiring thermo-responsive and high electrical switching fields.

The design of a charge pump for the high speed operation of PLL circuits (High speed에 필요한 PLL charge pump 회로 설계 및 세부적인 성능 평가)

  • 신용석;윤재석;허창우
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.2 no.2
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    • pp.267-273
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    • 1998
  • In this paper, we designed a charge pump with a differential current switching structure and it was made of a MESFET with high speed switching Property compared with CMOSFETs. The charge pump with a differential current switching structure is analyzed about operating property of circuit in high frequency band. Also we propose a method on it's characteristics estimation. The designed circuit is simulated by HSPICE simulator, and in view of the results we think that the charge pump of this study can be used in circuits of 1 GHZ frequency band grade.

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A Switching Controller for Stabilization of Uncertain Linear Systems (불확실한 선형시스템의 안정화를 위한 스위칭제어기)

  • Kim, Jung-Soo;Kim, Byung-Yeun;Lyon, Joon
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.382-385
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    • 1991
  • In order to stabilize linear time-invariant systems with the unknown system matrix, a piecewise constant linear state feedback control law including switching logic is developed. A number of feedback gain matrices are first precomputed by solving the Algebraic Riccati Equation with prescribed degree of stability, and then are switched over in a direction to increase degree of stability. Switching stops when a Lyapunov function shows the decreasing property, and hence switching times are finite.

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DEFAULTABLE BOND PRICING USING REGIME SWITCHING INTENSITY MODEL

  • Goutte, Stephane;Ngoupeyou, Armand
    • Journal of applied mathematics & informatics
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    • v.31 no.5_6
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    • pp.711-732
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    • 2013
  • In this paper, we are interested in finding explicit numerical formulas to evaluate defaultable bonds prices of firms. For this purpose, we use a default intensity whose values depend on the credit rating of these firms. Each credit rating corresponds to a state of the default intensity. Then, this regime switches as soon as one of the credit rating of a firm also changes. Moreover, this regime switching default intensity model allows us to capture well some market features or economics behaviors. Thus, we obtain two explicit different formulas to evaluate the conditional Laplace transform of a regime switching Cox Ingersoll Ross model. One using the property of semi-affine of the model and the other one using analytic approximation. We conclude by giving some numerical illustrations of these formulas and real data estimation results.

Effect of Domain Switching on Cracking in Ferroelectric Ceramic Actuators (분역회전이 강유전체 세라믹 액추에이터 내의 균열발생에 미치는 영향)

  • Jeong Kyoung Moon;Kim Jae Yun;Beom Hyeon Gyu
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.2
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    • pp.113-119
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    • 2005
  • A crack emanating from an internal electrode or a conducting damage path in ferroelectric ceramic actuators is analyzed. The boundary of the domain switching zone near the edge of the internal electrode in a ceramic multilayer actuator is determined based on the nonlinear electric theory. The stress intensity factor induced by a ferroelectric domain switching under small scale conditions is numerically obtained for flaws of various sizes near the electrode edge. It is found that stress intensity factor near the crack tip depends on the material property of the electrical nonlinearity.

Electrical and Memory Switching Characteristics of Amorphous Thin-Film $As_{10}Ge_{15}Te_{75}$ Thin-Film (비정질 $As_{10}Ge_{15}Te_{75}$ 박막의 전기적 및 메모리 스위칭 특성)

  • 이병석;이현용;정흥배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.234-237
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    • 1996
  • The amorphous chalogenide semiconductors are new material in semiconductor physics. Their properties, especially electronic and optical properties are main motives for device application. Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$material has the stable ac conductivity at high frequency and the dc memory switching property. At higher frequency than 10MHz, ac conductivity of As$_{10}$Ge$_{15}$ Te$_{75}$ thin film is much higher than below frequency and independent of temperature and frequency. If the dc voltages are applied between edges of thin film, one can see the dc memory switching phenomenon, in other words the dc conductivity increases quite a few of magnitude after the threshold voltage is applied. Using the stable ac conductivity at high frequency and the increase of conductivity after dc memory switching, As$_{10}$Ge$_{15}$ Te$_{75}$thin film is considered as new material for microwave switch devices.vices.es.vices.

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