• Korean Journal of Materials Research
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• v.30 no.2
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.307-314
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• 2008

The influence of a moist atmosphere on $90^{\circ}$ domain switching under a sustained electric field, stress corrosion cracking of an indentation crack in water and an aggressive solution, and the relation between penetrating crack propagation and domain switching were studied using $BaTiO_3$ single crystal. The results indicate that enlarging the domain switching zone and crack propagation could be facilitated by a moist atmosphere or an aggressive solution due to the indentation residual stress. A moist atmosphere exerts remarkable influence upon the polarization of $BaTiO_3$ single crystal under a sustained electric field, and the surface energy of the c domain was much lower than that of the a domain. Domain switching ahead of a penetrating indentation crack tip was an essential requirement for crack propagation under constant stress.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.262-266
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• 2000

We investigated the effect of the grain size on the photovoltaic current in (Pb$_{1-x}$La$_x$)TiO$_3$ceramics, and the photoinduced domain switching in (Pb$_{0.85}$La$_{0.15}$)TiO$_3$and BaTiO$_3$ceramics. These behaviors in ferroelectric ceramics were attributed to the grain boundary at which photoexcited electrons were trapped. As the charged grain boundary acted as an electro-potential barrier which impeded the movement of electrons, the photovoltaic current showed a peak at a critical grain size. The space charge field built by the electrons trapped at the grain bound-aries was accounted for the photoinduced domain switching, and AE experimental results support well this account.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.498-501
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• 2009

Electrophoretic displays (EPDs) are attracting considerable attentions as a paper-like display. Especially, Electrophoretic cell consists of micron-sized, charged particles dispersed in a viscous fluid. When an external electric field is applied, the charged particles move with a speed proportional to the particle mobility and the local field strength. In electrophoretic displays fast switching times are required, so knowing the particle mobility is very important. In this paper, we study a novel simulation for calculating the particle motions submerged in a viscous fluid for horizontal switching electrophoretic cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Journal of Information Display
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• v.6 no.2
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• pp.7-11
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• 2005

This paper investgates the transflective liquid crystal displays (LCDs) associated with fringe-field switching (FFS) mode to achieve high image quality. In the past, several cell structures were used to fabricate transflective FFS LCDs. Their structures and characteristics are carefully examined to find their merits and demerits. In addition, we attempt to optimize cell parameters to achieve a single driving circuit.

• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.4
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• pp.399-404
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• 2012

In this paper, a stator-separated axial flux-switching hybrid excitation synchronous machine (SSAFHESM) is presented, of which the structure and operational principle are introduced. The magnetic field distribution under different excited currents is analyzed, and some characteristics including flux-linkage, EMF and field control ability are studied by finite element analysis (FEA). Tests are carried out on a 12/10-pole prototype machine to validate the analysis results, and an excellent agreement is obtained.

• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.4
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• pp.505-508
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• 2012

A permanent magnet flux switching (PMFS) machine has a simple rotor, whilst both magnets and coils are set in the stator, resulting in easy removal of heat due to both copper loss and eddy current loss in magnets. However, the volume of magnets used in PMFS machines is usually larger than in conventional PM machines, and leakage flux does exist at the non-airgap side. To make full use of the magnets and gain higher power density, a novel 3-dimensional (3D) field PMFS machine is developed. It combines merits of the tubular linear machine, external-rotor rotary machine and axial-flux rotary machine, hence, offers high power density and peak torque capability, as well as efficient utility of magnets owing to the unique configuration of triple airgap fields.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.311-318
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• 2004

We have studied electro-optic characteristics as a function of pretilt angle ($\theta$$_{p}$) in the fringe-field switching (FFS) mode using the LC with positive dielectric anisotropy. When $\theta$$_{p}$ is increased from 0$^{\circ}$ to 20$^{\circ}$, a maximum transmittance and an operating voltage are obviously decreased. In the viewing angle characteristics, the cell with low pretilt angle has a wide region for the contrast ratio greater than 5 and has a best luminance uniformity. Therefore, in the FFS device, a low pretilt angle is favored for high transmittance and wide viewing angle.gle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.171-171
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• 2010

Electro-optic characteristics of liquid crystal display using fringe field switching(FFS) device depend on many parameters such as cell retardation, electrode structure, rubbing angle, cell gap and dielectric anisotropy. In this paper, the light efficiency of FFS mode will be analyzed to confirm the electro-optic characteristics according to positive dielectric anisotropy such as transmittance, operating voltage and response time.