• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.306-311
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• 2007

The transient fields generated during switching operations in a Gas Insulated Substation (GIS) are associated with high frequency components in the order of few tens of MHz. These transient fields leak into the external environment of the gas-insulated equipment and can interfere with the nearby electronics. Measurements of the transient fields are thus required to characterise the interference caused by switching phenomena in such substations. In view of the above, E-field emission measurement during a switching operation has been carried out for a 245 kV GIS model, using a resonant dipole antenna and D-dot sensor. The characteristics of the E-fields i.e., frequency spectra and their levels have been analysed and are reported in the paper. Suitability of the measurements has been confirmed by comparing frequency spectra of the measured and computed transient fields.

• Journal of Information Display
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• v.1 no.1
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• pp.9-13
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• 2000

In liquid crystal displays, the display mode that represents initial liquid crystal alignment and method of applying voltage, mainly determines the image quality of display. Recently we have developed the fringe-field switching (FFS) mode exhibiting high image quality. In this paper, a pixel concept, manufacturing process, materials, and electro-optic characteristics of the FFS mode comparing with conventional in-plane switching mode, and its possible application to reflective type are discussed.

• Korean Journal of Optics and Photonics
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• v.25 no.6
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• pp.301-310
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• 2014

Recently, the fringe-field switching (FFS) mode in liquid crystal displays has been used mainly for high image quality and high-resolution liquid crystal displays (LCDs). In this review paper, the fundamental switching principle of the FFS mode, with its excellence over other LC modes in electro-optic performance, will be described. In addition, the development history, present technical issues, and future of the FFS LCD will be discussed.

• ETRI Journal
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• v.23 no.3
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• pp.106-110
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• 2001

Subpicosecond all-optical switching method based on the simultaneous two-photon coherence exchange is proposed and numerically demonstrated. The optical switching mechanism is based on the optical field induced dark resonance swapping via nondegenerate four-wave mixing processes. For potential applications of ultrafast all-optical switching in fiber-optic communications, 10-THz channel number independent quantum router is discussed.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.46-52
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• 1998

In this study, polarization switching characteristics of Pb(ZrxTil-x)O3 (PZT) thin films were investigated. Switching times(ts) were found to be decreased as the Zr mol% was increased. But, the switching peak currents(Imax) showed the largest value at 50 mol% Zr. As a result of this experiment, ts was found to be depended on the remanent polarization and coercive field and also Imax strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM(metalferroelectric metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages(4, 8, 10, 12 and 14 volts). As the applied voltages increased, ts and Imax were found to be decreased and increased, respectively. In case of fatigued specimen which we applied $\pm$10 volts square pulse for 1010 cycles, ts and Imax were found to be shorter and smaller than those of virgin specimens. This is due to the decrease of the remanent polarization and the increase of the coercive field.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.1-10
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• 2008

In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.63-64
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• 2009

Optical bounce during switching in the fringe field switching (FFS) mode using a liquid crystal (LC) with positive dielectric anisotropy has been observed. According to the analysis, it occurs at two positions which are center and edge of the pixel electrode, which decreases decaying response time. The former is major and mainly associated with increase in twist angle instantaneously during switching off resulted from decrease in tilt angle near by LC molecules at center. This paper discusses the origin of such optical bounces.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.10-17
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• 2002

Due to the development of information communication field, the interest of the SMPS(Switched Mode Power Supply) is increased. The size and weight of SMPS are decided by inductor, capacitor and transformer. Thus, the low loss converter which is operated in high speed switching is required. The resonant FB DC-DC converter is able to operate in high speed switching and apply to high power field because the switching loss is low. In this thesis, it is proposed to control strategy for constant output power of resonant FB DC-DC converter in variable input voltage. The proposed control system is a digital I-PD type control and apply to phase-shift resonant type controller. The output voltage tracks reference without steady state error in variable input voltage. The validity of proposed control strategy is verified from results of simulation and experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.720-725
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• 2002

The fringe-field switching (FFS) mode was known to exhibit both a wide viewing angle and high transmittance, especially when using the liquid crystal (LC) with negative dielectric anisotropy. In the device, the LC director rotates almost in-plane. However, in the bright state the device shows bluish and yellowish color along parallel and perpendicular to the LC director at off-normal directions since the LC director rotates only in one direction. Such a problem was greatly improved using a wedge shape of only pixel electrodes. In this way two different field directions exist in a pixel, enabling the LC director to rotate in two opposite directions. Consequently, owing to dual domain effect when using the LC with negative dielectric anisotropy, the viewing angle characteristics are greatly improved.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.2
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• pp.120-125
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• 2005

Effect of transverse electric fields on fracture behavior in ferroelectric ceramics under purely electrical loading is investigated. It is shown that the shape and size of the domain switching zone depend strongly on the ratio of the transverse electric field to the coercive electric field as well as the direction of the applied electric field. Under small-scale conditions, the crack-tip mode I and II stress intensity factors induced by ferroelectric domain switching are numerically obtained. The crack kinking in ferroelectric ceramics is also discussed.