• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.755-760
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• 2003

A novel current-fed energy-recovery sustaining driver (CFERSD) for a PDP is proposed in this paper. Its main idea is to recover the energy stored in the PDP or to inject the input source energy to the PDP by using the current source built-up in the energy recovery inductor. This method provides zero-voltage-switching (ZVS) of all main power switches, the reduction of EMI, and more improved operational voltage margins with the aid of the discharge current compensation. In addition, since the current flowing through the energy recovery inductor can compensate the plasma discharge current flowing through the conducting power switches, the current stress through all main power switches can be considerably reduced. Furthermore, it features a low conduction loss and fast transient time. Operations, features and design considerations are presented and verified experimentally on a 1020X106mm sized PDP, 50kHz-switching frequency, and sustaining voltage 140V based prototype.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.95-98
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• 2003

The positive column discharge characteristics in the long gap (440 ${\mu}m$) are investigated based on the voltage distribution among three electrodes. In particular, the effects of the amplitude and width of the short pulse applied to the address electrode on the positive column discharge characteristics are examined intensively. By proper controlling of the amplitude and width of the address short pulse, it is found that the positive column discharge in the long gap is well constructed. As a result, under the stable static voltage margin condition, the firing and sustaining voltages are as low as those of conventional short gap(60 ${\mu}m$) discharge($V _f=220V$, $V_s=150V$) and the color purity is improved. Moreover, the luminous efficiency increases up to 60% in comparison with the conventional case.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.707-710
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• 2002

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.551-555
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• 2004

The two-transformer full bridge (TTFB) PWM converter has two transformers which act as the output inductor as well as the main transformer, i.e. as the forward and the flyback transformer. Although the doubled leakage inductor of the TTFB makes it easier to achieve the zero-voltage switching (ZVS) of the lagging leg switch along the wide load range, it instigates a serious voltage ringing in the secondary rectifier diodes, which would require the dissipative snubber circuit, cause the serious power dissipation, and increase the voltage stress across those diodes. To overcome these problems, a, new lossless diode-clamp rectifier (LDCR) is employed as the output rectifier, which helps the voltage across rectifier diodes to be clamped on a half the output voltage $(V_o/2)$ or the output voltage $(V_o)$. Therefore, no dissipative snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. The operations, analysis and design consideration of proposed converter are presented in this paper. To verify the validity of the proposed converter, experimental results from a 425W, 385-170Vdc prototype for the plasma display panel (PDP) sustaining power module (PSPM) are presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.128-130
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• 2000

A new type ac plasma display panels(PDPs) cells are designed and tested electrically and optically. One cells have the structure of sin discharge path shape and small electrode area. The other cells have the non-symmetric structure with a same electrode area. They show a higher luminous efficienccy and a lower power consumption about 30% improvement than the conventional standard ac PDP cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.540-543
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• 2004

The stress of MgO thin film, which is used as a dielectric protective layer in AC-PDP, was measured by a laser scanning method. MgO films were deposited bye-beam evaporation on glass substrates with dielectrics layer on them in various deposition temperatures ranging from room temperature to 300 $^{\circ}C$. The compressive stress of MgO films was increased with increasing substrate temperature due to intrinsic stress accumulation, causing the densification of the films. Both firing voltage ($V_f$) and sustaining voltage ($V_s$) were reduced for the higher compressively stressed and densified films. In the other hand, another film properties such as preferred crystallographic orientation and surface roughness seemed not to influence the discharge characteristics of $V_f$ and $V_s$ significantly.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.396-399
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• 2008

In this study, the electric field distributions have been investigated by simulation in accordance with the various shapes of ITO-electrodes. Also we have measured the density of excited Xe atoms in the 1s5 state in discharge cell, where the gap distance of 60 um, gas pressure of 400 Torr, Xe contents of 7%, and sustaining voltage of 200 V are kept in this experiment. The maximum density of excited Xe atoms in the 1s5 state in a discharge cell for the fish-boned, T shaped and squared ITO electrodes have been measured to be $3.01\;{\times}\;10^{13}\;cm^{-3}$, $2.66\;{\times}\;10^{13}\;cm^{-3}$ and $2.06\;{\times}\;10^{13}\;cm^{-3}$, respectively. It is shown that the electric field distribution with different ITO Electrodes is essential factor for these maximum density of excited Xe atoms in discharge cell.